Industrial Grade IGBT Module Infineon FF300R12KS4 62mm C Series with High Voltage and Current Ratings
Key Attributes
Model Number:
FF300R12KS4
Product Custom Attributes
Pd - Power Dissipation:
1.95kW
Td(off):
530ns
Td(on):
100ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
1.4nF
IGBT Type:
IGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@12.0mA
Gate Charge(Qg):
3.2uC
Operating Temperature:
-40℃~+125℃
Pulsed Current- Forward(Ifm):
600A
Switching Energy(Eoff):
15mJ
Turn-On Energy (Eon):
25mJ
Mfr. Part #:
FF300R12KS4
Package:
Screw Terminals
Product Description
Product Description
The 62mm C-Series module features a fast IGBT2 for high-frequency switching applications. It is designed for inverter use and offers robust performance with excellent thermal characteristics.
Product Attributes
- Brand: Infineon
- Product Line: C-Series
- Model: FF300R12KS4
Technical Specifications
| Parameter | IGBT, Inverter | Diode, Inverter | Module |
| Collector-emitter voltage (VCES) | 1200 V | ||
| Continuous DC collector current (IC) | 300 A (TC=60C) / 370 A (TC=25C) | ||
| Repetitive peak collector current (ICRM) | 600 A | ||
| Total power dissipation (Ptot) | 1950 W (TC=25C) | ||
| Gate-emitter peak voltage (VGES) | +/-20 V | ||
| Collector-emitter saturation voltage (VCE sat) | 3.20 - 3.85 V (IC=300A, VGE=15V) | ||
| Gate threshold voltage (VGEth) | 4.5 - 6.5 V (IC=12.0mA) | ||
| Gate charge (QG) | 3.20 C (VGE=-15V...+15V) | ||
| Internal gate resistor (RGint) | 1.0 | ||
| Input capacitance (Cies) | 20.0 nF (f=1MHz) | ||
| Reverse transfer capacitance (Cres) | 1.40 nF (f=1MHz) | ||
| Collector-emitter cut-off current (ICES) | 5.0 mA (VCE=1200V) | ||
| Gate-emitter leakage current (IGES) | 400 nA (VCE=0V, VGE=20V) | ||
| Turn-on delay time (td on) | 0.10 - 0.11 s | ||
| Rise time (tr) | 0.06 - 0.07 s | ||
| Turn-off delay time (td off) | 0.53 - 0.55 s | ||
| Fall time (tf) | 0.03 - 0.04 s | ||
| Turn-on energy loss per pulse (Eon) | 25.0 mJ | ||
| Turn-off energy loss per pulse (Eoff) | 15.0 mJ | ||
| Short circuit data (ISC) | 2000 A | ||
| Thermal resistance, junction to case (RthJC) | 0.064 K/W (per IGBT) | 0.10 K/W (per diode) | |
| Thermal resistance, case to heatsink (RthCH) | 0.03 K/W (per IGBT) | 0.06 K/W (per diode) | 0.01 K/W (per module) |
| Temperature under switching conditions (Tvj op) | -40 - 125 C | -40 - 125 C | |
| Repetitive peak reverse voltage (VRRM) | 1200 V | ||
| Continuous DC forward current (IF) | 300 A | ||
| Repetitive peak forward current (IFRM) | 600 A | ||
| I2t - value | 18000 As | ||
| Forward voltage (VF) | 1.70 - 2.55 V | ||
| Peak reverse recovery current (IRM) | 230 - 300 A | ||
| Recovered charge (Qr) | 18.0 - 42.0 C | ||
| Reverse recovery energy (Erec) | 7.0 - 15.0 mJ | ||
| Isolation test voltage (VISOL) | 2.5 kV (RMS) | ||
| Creepage distance (terminal to heatsink) | 29.0 mm | ||
| Creepage distance (terminal to terminal) | 23.0 mm | ||
| Clearance (terminal to heatsink) | 23.0 mm | ||
| Clearance (terminal to terminal) | 11.0 mm | ||
| Comperative tracking index (CTI) | > 400 | ||
| Stray inductance module (LsCE) | 20 nH | ||
| Module lead resistance, terminals - chip (RCC'+EE') | 0.70 m | ||
| Storage temperature (Tstg) | -40 - 125 C | ||
| Mounting torque for module mounting (M6) | 3.00 - 6.00 Nm | ||
| Terminal connection torque (M6) | 2.5 - 5.0 Nm | ||
| Weight (G) | 340 g |
2409292233_Infineon-FF300R12KS4_C541030.pdf
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