High Voltage SiC MOSFET HXY MOSFET HC3M0015065D N Channel Enhancement Mode for Power Applications
Key Attributes
Model Number:
HC3M0015065D
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-40℃~+175℃
RDS(on):
21mΩ
Gate Threshold Voltage (Vgs(th)):
3.6V
Reverse Transfer Capacitance (Crss@Vds):
31pF
Output Capacitance(Coss):
289pF
Pd - Power Dissipation:
416W
Input Capacitance(Ciss):
501pF
Gate Charge(Qg):
188nC
Mfr. Part #:
HC3M0015065D
Package:
TO-247
Product Description
Product Overview
The HC3M0015065D is a 3rd Generation SiC Power MOSFET from HUAXUANYANG ELECTRONICS CO.,LTD, designed for high-efficiency power applications. This N-Channel Enhancement Mode MOSFET offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. Its features lead to higher system efficiency, reduced cooling requirements, increased power density, and higher system switching frequencies.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Part Number: HC3M0015065D
- Material: SiC (Silicon Carbide)
- Package: TO-247
- Certifications: Halogen free, RoHS compliant
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Technical Specifications
| Symbol | Parameter | Min. | Typ. | Max. | Unit | Test Conditions | Note |
|---|---|---|---|---|---|---|---|
| Maximum Ratings | |||||||
| VDSmax | Drain - Source Voltage | 650 | V | ||||
| VGSmax | Gate - Source voltage | -8 | +19 | V | Note 1 | ||
| ID | Continuous Drain Current, VGS = 15 V, TC = 25C | 120 | A | Fig. 19 | Note 2 | ||
| ID | Continuous Drain Current, VGS = 15 V, TC = 100C | 96 | A | ||||
| ID(pulse) | Pulsed Drain Current, Pulse width tP limited by Tjmax | 418 | A | ||||
| PD | Power Dissipation, TC=25C, TJ = 175 C | 416 | W | Fig. 20 | |||
| TJ , Tstg | Operating Junction and Storage Temperature | -40 | +175 | C | |||
| TL | Solder Temperature, 1.6mm (0.063) from case for 10s | 260 | C | ||||
| Md | Mounting Torque, (M3 or 6-32 screw) | 1 | 8.8 | Nm lbf-in | Note | ||
| Electrical Characteristics | |||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | 650 | V | VGS = 0 V, ID = 100 A | |||
| VGS(th) | Gate Threshold Voltage | 1.8 | 2.3 | 3.6 | V | VDS = VGS, ID = 15.5 mA | Fig. 11 |
| VGS(th) | Gate Threshold Voltage | 1.9 | V | VDS = VGS, ID = 15.5 mA, TJ = 175C | |||
| IDSS | Zero Gate Voltage Drain Current | 1 | 50 | A | VDS = 650 V, VGS = 0 V | ||
| IGSS | Gate-Source Leakage Current | 10 | 250 | nA | VGS = 15 V, VDS = 0 V | ||
| RDS(on) | Drain-Source On-State Resistance | 10.5 | 15 | m | VGS = 15 V, ID = 55.8A | Fig. 4, 5,6 | |
| RDS(on) | Drain-Source On-State Resistance | 20 | m | VGS = 15 V, ID = 55.8A, TJ = 175C | |||
| gfs | Transconductance | 42 | S | VDS= 20 V, IDS= 55.8 A | Fig. 7 | ||
| gfs | Transconductance | 40 | S | VDS= 20 V, IDS= 55.8 A, TJ = 175C | |||
| Ciss | Input Capacitance | 5011 | pF | VGS = 0 V, VDS = 400 V f = 100 Khz VAC = 25 mV | Fig. 17, 18 | ||
| Coss | Output Capacitance | 289 | pF | ||||
| Crss | Reverse Transfer Capacitance | 31 | pF | ||||
| Co(er) | Effective Output Capacitance (Energy Related) | 357 | pF | Note: 3 | |||
| Co(tr) | Effective Output Capacitance (Time Related) | 516 | pF | Note: 3 | |||
| Eoss | Coss Stored Energy | 29 | J | Fig. 16 | |||
| EON | Turn-On Switching Energy (Body Diode) | 1500 | J | VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 , L= 57.6 H, TJ = 175C FWD = Internal Body Diode of MOSFET | Fig. 25 | ||
| EOFF | Turn Off Switching Energy (Body Diode) | 700 | J | ||||
| EON | Turn-On Switching Energy (External Diode) | 1200 | J | VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 , L= 57.6 H, TJ = 175C FWD = External SiC DIODE | Fig. 25 | ||
| EOFF | Turn Off Switching Energy (External Diode) | 1000 | J | ||||
| td(on) | Turn-On Delay Time | 22 | ns | VDD = 400 V, VGS = -4 V/15 V ID = 55.8 A, RG(ext) = 5 , L= 57.6 H Timing relative to VDS Inductive load | Fig. 26 | ||
| tr | Rise Time | 125 | ns | ||||
| td(off) | Turn-Off Delay Time | 58 | ns | ||||
| tf | Fall Time | 25 | ns | ||||
| RG(int) | Internal Gate Resistance | 1.5 | f = 1 MHz, VAC= 25 mV | ||||
| Qgs | Gate to Source Charge | 54 | nC | VDS = 400 V, VGS = -4 V/15 V ID = 55.8 A Per IEC60747-8-4 pg 21 | Fig. 12 | ||
| Qgd | Gate to Drain Charge | 62 | nC | ||||
| Qg | Total Gate Charge | 188 | nC | ||||
| Reverse Diode Characteristics | |||||||
| VSD | Diode Forward Voltage | 4.7 | V | VGS = -4 V, ISD = 27.9 A, TJ = 25 C | Fig. 8, 9, 10 | ||
| VSD | Diode Forward Voltage | 4.2 | V | VGS = -4 V, ISD = 27.9 A, TJ = 175 C | |||
| IS | Continuous Diode Forward Current | 79 | A | VGS = -4 V, TC = 25C | |||
| IS, pulse | Diode pulse Current | 418 | A | VGS = -4 V, pulse width tP limited by Tjmax | |||
| trr | Reverse Recovery time | 85 | ns | VGS = -4 V, ISD = 55.8 A, VR = 400 V dif/dt = 1500 A/s, TJ = 175 C | |||
| Qrr | Reverse Recovery Charge | 667 | nC | ||||
| Irrm | Peak Reverse Recovery Current | 17 | A | ||||
| trr | Reverse Recovery time | 74 | ns | VGS = -4 V, ISD = 55.8 A, VR = 400 V dif/dt = 1000 A/s, TJ = 175 C | |||
| Qrr | Reverse Recovery Charge | 562 | nC | ||||
| Irrm | Peak Reverse Recovery Current | 14 | A | ||||
| Thermal Characteristics | |||||||
| RJC | Thermal Resistance from Junction to Case | 0.35 | C/W | Fig. 21 | |||
| RJA | Thermal Resistance From Junction to Ambient | 40 | C/W | ||||
2509181522_HXY-MOSFET-HC3M0015065D_C19723863.pdf
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