High power Infineon FZ600R12KE4 IGBT module with 1200 volt voltage and 600 amp continuous current rating
Key Attributes
Model Number:
FZ600R12KE4
Product Custom Attributes
Pd - Power Dissipation:
3kW
Td(off):
610ns
Td(on):
240ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
1.7nF
Input Capacitance(Cies):
42nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@23mA
Operating Temperature:
-40℃~+150℃
Gate Charge(Qg):
5.6uC
Pulsed Current- Forward(Ifm):
1200A
Switching Energy(Eoff):
50mJ
Turn-On Energy (Eon):
35mJ
Mfr. Part #:
FZ600R12KE4
Package:
Screw Terminals
Product Description
Product Overview
The FZ600R12KE4 is a 62mm C-Series IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology. It offers extended operation temperature, low switching losses, high robustness, and a positive temperature coefficient for VCEsat. This module is designed for high-power applications such as high-power converters, motor drives, UPS systems, and wind turbines.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: UL approved (E83335)
Technical Specifications
| Parameter | Unit | FZ600R12KE4 |
| IGBT, Inverter | ||
| Collector-emitter voltage (VCES) | V | 1200 |
| Continuous DC collector current (IC nom) @ TC = 100C, Tvj max = 175C | A | 600 |
| Repetitive peak collector current (ICRM) tP = 1 ms | A | 1200 |
| Total power dissipation (Ptot) @ TC = 25C, Tvj max = 175C | W | 3000 |
| Gate-emitter peak voltage (VGES) | V | +/-20 |
| Collector-emitter saturation voltage (VCE sat) @ IC = 600 A, VGE = 15 V | V | 1.75 - 2.10 |
| Gate threshold voltage (VGEth) @ IC = 23.0 mA, VCE = VGE, Tvj = 25C | V | 5.2 - 6.4 |
| Gate charge (QG) @ VGE = -15 V ... +15 V | µC | 5.60 |
| Internal gate resistor (RGint) @ Tvj = 25C | Ω | 1.3 |
| Input capacitance (Cies) @ f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V | nF | 42.0 |
| Reverse transfer capacitance (Cres) @ f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V | nF | 1.70 |
| Collector-emitter cut-off current (ICES) @ VCE = 1200 V, VGE = 0 V, Tvj = 25C | mA | 5.0 |
| Gate-emitter leakage current (IGES) @ VCE = 0 V, VGE = 20 V, Tvj = 25C | nA | 400 |
| Turn-on delay time (td on) @ IC = 600 A, VCE = 600 V, VGE = ±15 V, RGon = 1.2 Ω | µs | 0.24 - 0.26 |
| Rise time (tr) @ IC = 600 A, VCE = 600 V, VGE = ±15 V, RGon = 1.2 Ω | µs | 0.09 - 0.11 |
| Turn-off delay time (td off) @ IC = 600 A, VCE = 600 V, VGE = ±15 V, RGoff = 1.2 Ω | µs | 0.61 - 0.66 |
| Fall time (tf) @ IC = 600 A, VCE = 600 V, VGE = ±15 V, RGoff = 1.2 Ω | µs | 0.10 - 0.15 |
| Turn-on energy loss per pulse (Eon) @ IC = 600 A, VCE = 600 V, LS = 60 nH, VGE = ±15 V, di/dt = 5500 A/µs, RGon = 1.2 Ω | mJ | 35.0 - 55.0 |
| Turn-off energy loss per pulse (Eoff) @ IC = 600 A, VCE = 600 V, LS = 60 nH, VGE = ±15 V, du/dt = 3500 V/µs, RGoff = 1.2 Ω | mJ | 50.0 - 80.0 |
| Short circuit data (ISC) @ VGE ≤ 15 V, VCC = 800 V, Tvj = 150°C, tP ≤ 10 µs | A | 2400 |
| Thermal resistance, junction to case per IGBT (RthJC) | K/W | 0.05 |
| Thermal resistance, case to heatsink per IGBT (RthCH) @ λPaste = 1 W/(m·K) | K/W | 0.017 |
| Temperature under switching conditions (Tvj op) | °C | -40 - 150 |
| Diode, Inverter | ||
| Repetitive peak reverse voltage (VRRM) @ Tvj = 25°C | V | 1200 |
| Continuous DC forward current (IF) | A | 600 |
| Repetitive peak forward current (IFRM) tP = 1 ms | A | 1200 |
| I²t value @ VR = 0 V, tP = 10 ms | A²s | 49000 - 51000 |
| Forward voltage (VF) @ IF = 600 A | V | 1.70 - 2.35 |
| Peak reverse recovery current (IRM) @ IF = 600 A, - diF/dt = 5500 A/µs, VR = 600 V, VGE = -15 V | A | 440 - 590 |
| Recovered charge (Qr) @ IF = 600 A, - diF/dt = 5500 A/µs, VR = 600 V, VGE = -15 V | µC | 55.0 - 115 |
| Reverse recovery energy (Erec) @ IF = 600 A, - diF/dt = 5500 A/µs, VR = 600 V, VGE = -15 V | mJ | 27.0 - 60.0 |
| Thermal resistance, junction to case per diode (RthJC) | K/W | 0.07 |
| Thermal resistance, case to heatsink per diode (RthCH) @ λPaste = 1 W/(m·K) | K/W | 0.024 |
| Temperature under switching conditions (Tvj op) | °C | -40 - 150 |
| Module | ||
| Isolation test voltage RMS (VISOL) @ f = 50 Hz, t = 1 min. | kV | 4.0 |
| Material of module baseplate | Cu | |
| Internal isolation | Al2O3 | |
| Creepage distance terminal to heatsink | mm | 25.0 |
| Creepage distance terminal to terminal | mm | 19.0 |
| Clearance terminal to heatsink | mm | 25.0 |
| Clearance terminal to terminal | mm | 10.0 |
| Comparative tracking index (CTI) | > 400 | |
| Thermal resistance, case to heatsink per module (RthCH) @ λPaste = 1 W/(m·K) | K/W | 0.01 |
| Module stray inductance (LsCE) | nH | 16 |
| Module lead resistance, terminals - chip (RCC'+EE') @ TC = 25°C, per switch | mΩ | 0.50 |
| Storage temperature (Tstg) | °C | -40 - 125 |
| Mounting torque for module mounting Screw M6 | Nm | 3.00 - 6.00 |
| Terminal connection torque Screw M4 | Nm | 1.1 |
| Terminal connection torque Screw M6 | Nm | 2.0 - 5.0 |
| Weight (G) | g | 340 |
2411220125_Infineon-FZ600R12KE4_C535643.pdf
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