Power MOSFET Huixin H3N80D with 800 Volt Drain to Source Voltage and Wide Operating Temperature Range
Key Attributes
Model Number:
H3N80D
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
3A
RDS(on):
3.8Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
75W
Gate Charge(Qg):
16nC@400V
Mfr. Part #:
H3N80D
Package:
TO-252
Product Description
Product Overview
The H3N80D is an N-Channel Enhancement Mode MOSFET designed for various power applications. It offers robust thermal characteristics, including a low junction-to-case thermal resistance, and a wide operating junction temperature range. Its maximum ratings support high voltage and current operation, making it suitable for demanding switching applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: UL 5
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Thermal Characteristics | ||||
| Power Dissipation (TC = 25C) | PD | 75 | W | |
| Thermal Resistance Junction-to-Air | RJA | 62 | C/W | |
| Thermal Resistance Junction-to-Case | RJC | 1.67 | C/W | |
| Operating Junction Temperature Range | TJ | -55 ~ +150 | C | |
| Storage Temperature Range | TSTG | -55 ~ +150 | C | |
| Maximum Ratings (@ TC = 25C unless otherwise specified) | ||||
| Drain-to-Source Voltage | VDSS | 800 | V | |
| Gate-to-Source Voltage | VGSS | 30 | V | |
| Continuous Drain Current (TC = 25C) | ID | 3 | A | |
| Continuous Drain Current (TC = 100C) | ID | 1.9 | A | |
| Pulsed Drain Current (VGS = 10V) | IDM | 12 | A | *1 |
| Single Pulse Avalanche Energy | EAS | 120 | mJ | *3 |
| Electrical Characteristics (@ TJ = 25C unless otherwise specified) | ||||
| Drain-Source Breakdown Voltage | VDSS | 800 | V | VGS = 0V, ID = 250A |
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS = 30V, VDS = 0V |
| Static Drain-Source On-resistance | RDS(ON) | 3.8 | VGS = 10V, ID = 2.0A *2 | |
| Gate Threshold Voltage | VGS(th) | 3 ~ 4 | V | VDS = VGS, ID = 250A |
| Forward Transconductance | gfs | 5.5 | S | VDS = 15V, ID = 3A |
| Input Capacitance | CISS | 490 | pF | VGS = 0V, VDS = 25V, f = 1.0MHz |
| Output Capacitance | COSS | 25 | pF | |
| Reverse Transfer Capacitance | CRSS | 50 | pF | |
| Turn-on Delay Time | td(ON) | 10 | ns | VDD = 400V, VGS = 10V, RG = 12, ID = 3A |
| Turn-on Rise Time | tr | 10 | ns | |
| Turn-Off Delay Time | td(OFF) | 30 | ns | |
| Turn-Off Fall Time | tf | 15 | ns | |
| Total Gate-Charge | QG | 16 | nC | VDD =400V, VGS = 10V, ID = 3A |
| Gate to Source Charge | QGS | 3 | nC | |
| Gate to Drain (Miller) Charge | QGD | 6 | nC | |
| Diode Forward Voltage | VSD | 1.4 | V | ISD = 2A, VGS = 0V *2 |
| Continuous Source Current | IS | 3 | A | |
| Pulsed Source Current | ISM | 12 | A | |
| Reverse Recovery Time | trr | 135 | ns | IF = 3A, VGS = 0V, dIF/dt = 100A/us |
| Reverse Recovery Charge | Qrr | 446 | nC | |
2508041620_Huixin-H3N80D_C49823478.pdf
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