switching component Huixin H5NK80 800V N channel MOSFET with low gate charge and avalanche tested
Key Attributes
Model Number:
H5NK80
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
5A
RDS(on):
2Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.7pF
Number:
1 N-channel
Output Capacitance(Coss):
12.5pF
Input Capacitance(Ciss):
190pF
Gate Charge(Qg):
5nC@10V
Mfr. Part #:
H5NK80
Package:
TO-220
Product Description
H5NK80 800V N-channel MOSFET
The H5NK80 is an 800V N-channel MOSFET designed for switching applications. It features 100% avalanche testing, minimized gate charge, and very low intrinsic capacitances, ensuring very good manufacturing repeatability. This MOSFET is ideal for various switching applications.
Product Attributes
- Certifications: UL
Technical Specifications
| Symbol | TCASE (C) | Parameter | Value | Unit |
| - | 25 | Absolute Maximum Ratings | - | - |
| - | 25 | Electrical Characteristics | - | - |
Typical Characteristic Curves
- Fig.1 Output Characteristics
- Fig.2 Transfer Characteristics
- Fig.3 On-Resistance vs. Drain Current
- Fig.4 On-Resistance vs. Junction temperature
- Fig.5 Capacitance vs. Drain-Source Voltage
- Fig.6 Body Diode Characteristics
- Fig.7 Gate-Charge Characteristics
- Fig.8 Breakdown Voltage Variation vs. Temperature
- Fig.9 Threshold Voltage Variation with Temperature
- Fig.10 Maximum Safe Operating Area
- Fig.11 Normalized Transient Thermal Impedance vs. Pulse Width
Package Mechanical Data (TO-220)
| Unit (mm) | MIN | MAX |
| A | 10.0 | 10.4 |
| B | 15.2 | 15.6 |
| B1 | 9.00 | 9.60 |
| C | 4.47 | 4.67 |
| C1 | 2.28 | 2.88 |
| D | 1.20 | 1.40 |
| E | 0.70 | 0.90 |
| F | 0.40 | 0.60 |
| G | 1.27 | 1.47 |
| H | 3.20 | 3.70 |
| L | 12.95 | 13.55 |
| N | 2.34 | 2.74 |
| Q | 2.44 | 3.04 |
| Q | 3.74 | 3.94 |
2508211801_Huixin-H5NK80_C49435691.pdf
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