30V N Channel MOSFET Huixin H7534N Featuring 100 Percent Avalanche Testing and High Speed Switching
Key Attributes
Model Number:
H7534N
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
30A
RDS(on):
3.9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 N-channel
Input Capacitance(Ciss):
865pF
Pd - Power Dissipation:
23W
Output Capacitance(Coss):
430pF
Gate Charge(Qg):
17nC@10V
Mfr. Part #:
H7534N
Package:
DFN-8(3x3)
Product Description
Product Overview
The H7534N is a 30V single N-Channel MOSFET designed for high-performance applications. It features fast switching speeds, 100% avalanche testing, improved dv/dt capability, and enhanced avalanche ruggedness. This lead-free component is suitable for synchronous rectification in SMPS, hard switching and high-speed circuits, power tools, UPS, and motor control.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Lead Free
Technical Specifications
| Part Number | Package | Marking | VDSS (V) | RDS(ON) (Typ) (m) | ID (A) | Ordering Information |
| H7534N | DFN3*3 | 7534N | 30 | 3.9 | 30 | H7534N DFN3*3 Tape&reel 5000 PCS |
| Symbol | Parameter | Min. | Typ. | Max. | Units | Test Conditions |
| VDS | Drain-to-Source Voltage | -- | -- | 30 | V | |
| VGS | Gate-to-Source Voltage | -- | -- | ±20 | V | |
| ID | Continuous Drain Current (TC=25) | -- | -- | 30 | A | |
| ID | Continuous Drain Current (TC=100) | -- | -- | 20 | A | |
| IDM | Pulsed Drain Current | -- | -- | 100 | A | P |
| PD | Power Dissipation | -- | -- | 23 | W | |
| EAS | Single Pulse Avalanche Energy | -- | -- | 65 | mJ | L=0.5mH, RG=25,TC=25 |
| TJ, TSTG | Operating Junction and Storage Temperature Range | -55 | -- | 150 | ||
| V(BR)DSS | Drain-Source Breakdown Voltage | 30 | -- | -- | V | VGS=0V,ID=250A |
| IDSS | Zero Gate Voltage Drain Current (25) | -- | -- | 1 | A | VDS=30V,VGS=0V |
| IDSS | Zero Gate Voltage Drain Current (100) | -- | -- | 100 | A | VDS=30V,VGS=0V |
| IGSS | Gate to Source Forward Leakage | -- | -- | 100 | nA | VGS=20V,VDS=0V |
| IGSS | Gate to Source Reverse Leakage | -- | -- | -100 | nA | VGS=-20V,VDS=0V |
| VGS(TH) | Gate Threshold Voltage | 1 | 1.5 | 2 | V | VGS=VDS,ID=250A |
| RDS(on) | Static Drain-to-Source On-Resistance (Note*2) | -- | 3.9 | 4.8 | m | VGS=10V,ID=20A |
| RDS(on) | Static Drain-to-Source On-Resistance (Note*2) | -- | 5.2 | 6.4 | m | VGS=4.5V,ID=20A |
| Ciss | Input Capacitance | -- | 865 | -- | pF | VGS=0V,VDS=15V,f=1MHz |
| Coss | Output Capacitance | -- | 430 | -- | pF | VGS=0V,VDS=15V,f=1MHz |
| Crss | Reverse Transfer Capacitance | -- | 55 | -- | pF | VGS=0V,VDS=15V,f=1MHz |
| Rg | Gate Resistance | -- | 1.8 | -- | ||
| Qg | Total Gate Charge | -- | 17 | -- | nC | VDS=15V,ID=20A,VGS=10V |
| Qgs | Gate-to-Source Charge | -- | 3.8 | -- | nC | VDS=15V,ID=20A,VGS=10V |
| Qgd | Gate-to-Drain("Miller") Charge | -- | 3.2 | -- | nC | VDS=15V,ID=20A,VGS=10V |
| td(ON) | Turn-on Delay Time | -- | 9 | -- | nS | VDS=15V,ID=20A,RG=3,VGS=10V |
| trise | Rise Time | -- | 73 | -- | nS | VDS=15V,ID=20A,RG=3,VGS=10V |
| td(OFF) | Turn-OFF Delay Time | -- | 18 | -- | nS | VDS=15V,ID=20A,RG=3,VGS=10V |
| tfall | Fall Time | -- | 80 | -- | nS | VDS=15V,ID=20A,RG=3,VGS=10V |
| VSD | Diode Forward Voltage | -- | 0.7 | 1.1 | V | IF=1A,VGS=0V |
| trr | Reverse Recovery Time | -- | 14 | -- | nS | VR=15V,IF=20A,di/dt=100A/s |
| Qrr | Reverse Recovery Charge | -- | 3 | -- | nC | VR=15V,IF=20A,di/dt=100A/s |
| Symbol | Parameter | Typ | Max | Unit | |
| RJC | Thermal Resistance Junction-Case | 4.6 | 5.4 | / W | |
| RJA | Thermal Resistance Junction-Ambient | 60 | 75 | / W |
2507301400_Huixin-H7534N_C49435644.pdf
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