HXY MOSFET SI2301 ZE P Channel Enhancement Mode Transistor in SOT 23 Package for PWM and Load Switch
Key Attributes
Model Number:
SI2301-ZE
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@4.5V;145mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
32pF
Number:
1 P-Channel
Output Capacitance(Coss):
58pF
Pd - Power Dissipation:
700mW
Input Capacitance(Ciss):
285pF
Gate Charge(Qg):
2.9nC@4.5V
Mfr. Part #:
SI2301-ZE
Package:
SOT-23
Product Description
Product Overview
The SI2301-ZE is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 1.8V. This MOSFET is ideal for PWM applications and serves as an effective load switch.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD (HXY)
- Origin: Shenzhen, China
- Model: SI2301-ZE
- Package: SOT-23
- Product ID: A1SHB
- Marking: SI2301-ZE
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Drain Current-Continuous | ID | -2.3 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | -10 | A | |||
| Maximum Power Dissipation | PD | 0.7 | W | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Thermal Resistance,Junction-to-Ambient (Note 2) | RJA | 178 | /W | |||
| Off Characteristics (TA=25 unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V,VGS=0V | -1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | 100 | nA | ||
| On Characteristics (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | -0.4 | -0.7 | -1 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-2A | 140 | 162 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-2.5V, ID=-1.8A | 145 | m | ||
| Forward Transconductance | gFS | VDS=-5V,ID=-2A | 4 | S | ||
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Clss | VDS=-10V,VGS=0V, F=1.0MHz | 285 | PF | ||
| Output Capacitance | Coss | 58 | PF | |||
| Reverse Transfer Capacitance | Crss | 32 | PF | |||
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=-10V, RL=5, VGS=-4.5V,RGEN=3 | 9.8 | nS | ||
| Turn-on Rise Time | tr | 4.9 | nS | |||
| Turn-Off Delay Time | td(off) | 20.5 | nS | |||
| Turn-Off Fall Time | tf | 7 | nS | |||
| Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=-10V,ID=-2A, VGS=-4.5V | 2.9 | nC | ||
| Gate-Source Charge | Qgs | 0.45 | nC | |||
| Gate-Drain Charge | Qg d | 0.75 | nC | |||
| Drain-Source Diode Characteristics (Note 3) | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=-2A | -1.2 | V | ||
| Diode Forward Current (Note 2) | IS | -2.0 | A | |||
2509181604_HXY-MOSFET-SI2301-ZE_C5261052.pdf
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