High Speed Switching Huixin H15N10D Single N Channel MOSFET Suitable for Motor Control and UPS Systems
Key Attributes
Model Number:
H15N10D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
RDS(on):
75mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
38pF
Number:
1 N-channel
Input Capacitance(Ciss):
670pF
Output Capacitance(Coss):
47pF
Pd - Power Dissipation:
42W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
H15N10D
Package:
TO-252
Product Description
Product Overview
The H15N10D is a single N-Channel MOSFET designed for high-performance applications. It features fast switching speeds, 100% avalanche testing, improved dv/dt capability, and enhanced avalanche ruggedness. This lead-free component is suitable for synchronous rectification in SMPS, hard switching and high-speed circuits, power tools, UPS, and motor control applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Part Number | Package | VDS (V) | RDS(ON) (Typ) (m) | ID (A) | EAS (mJ) | TJ, TSTG (C) |
| H15N10D | TO-252 | 100 | 75 | 15 | 16 | -55 to 175 |
| Symbol | Parameter | Min. | Typ. | Max. | Units | Test Conditions |
| V(BR)DSS | Drain- Source Breakdown Voltage | 100 | -- | -- | V | VGS=0V,ID=250A |
| IDSS | Zero Gate Voltage Drain Current (25) | -- | -- | 1 | A | VDS=100V,VGS=0V |
| IDSS | Zero Gate Voltage Drain Current (100) | -- | -- | 100 | A | VDS=100V,VGS=0V |
| IGSS | Gate to Source Forward Leakage | -- | -- | 100 | nA | VGS=20V ,VDS=0V |
| IGSS | Gate to Source Reverse Leakage | -- | -- | -100 | nA | VGS=-20V ,VDS=0V |
| VGS(TH) | Gate Threshold Voltage | 1.0 | 2.0 | 2.5 | V | VGS=VDS,ID=250A |
| RDS(on) | Static Drain- to- Source On- Resistance | -- | 75 | 90 | m | VGS=10V,ID=6A |
| RDS(on) | Static Drain- to- Source On- Resistance | -- | 105 | 130 | m | VGS=4.5V,ID=4A |
| Symbol | Parameter | Typ. | Units | Test Conditions |
| Ciss | Input Capacitance | 670 | pF | VGS=0V VDS=25V f=1MHz |
| Coss | Output Capacitance | 47 | pF | VGS=0V VDS=25V f=1MHz |
| Crss | Reverse Transfer Capacitance | 38 | pF | VGS=0V VDS=25V f=1MHz |
| Rg | Gate Resistance | 1 | f=1MHz | |
| Qg | Total Gate Charge | 20 | nC | VDS=80V ID=10A VGS=10V |
| Qgs | Gate- to- Source Charge | 5 | nC | VDS=80V ID=10A VGS=10V |
| Qgd | Gate-to-Drain(" Miller") Charge | 5.5 | nC | VDS=80V ID=10A VGS=10V |
| td(ON) | Turn- on Delay Time | 10 | nS | VDS=50V ID=5A VGS=10V RG=2.5 |
| trise | Rise Time | 7 | nS | VDS=50V ID=5A VGS=10V RG=2.5 |
| td(OFF) | Turn- OFF Delay Time | 34 | nS | VDS=50V ID=5A VGS=10V RG=2.5 |
| tfall | Fall Time | 9 | nS | VDS=50V ID=5A VGS=10V RG=2.5 |
| VSD | Diode Forward Voltage | 1.2 | V | IF=6A,VGS=0V |
| Is | Diode Forward Current | 15 | A | Tc= 25 |
2507301400_Huixin-H15N10D_C49435646.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
