EconoDUAL3 Infineon FF450R17ME4 IGBT module with isolated base plate and high power density design
Key Attributes
Model Number:
FF450R17ME4
Product Custom Attributes
Mfr. Part #:
FF450R17ME4
Product Description
Product Overview
The FF450R17ME4 is an EconoDUAL3 IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode with NTC. It offers low VCEsat with a positive temperature coefficient, high power density, and an isolated base plate. This module is suitable for motor drives, servo drives, UPS systems, and wind turbines.
Product Attributes
- Brand: EconoDUAL3
- Certifications: UL approved (E83335)
- Module Label Code: DMX
- Module Material Number: Digit Module Serial Number (1-5), Production Order Number (6-11), Datecode (Production Year) (12-19), Datecode (Production Week) (20-21)
Technical Specifications
| Parameter | Symbol | Unit | Min. | Typ. | Max. | Conditions |
| IGBT, Inverter | ||||||
| Collector-emitter voltage | VCES | V | 1700 | Tvj = 25C | ||
| Continuous DC collector current | IC nom | A | 450 | TC = 100C, Tvj max = 175C | ||
| Continuous DC collector current | IC | A | 600 | TC = 25C, Tvj max = 175C | ||
| Repetitive peak collector current | ICRM | A | 900 | tP = 1 ms | ||
| Total power dissipation | Ptot | W | 2500 | TC = 25C, Tvj max = 175C | ||
| Gate-emitter peak voltage | VGES | V | -20 | +20 | ||
| Collector-emitter saturation voltage | VCE sat | V | 1.95 | 2.45 | IC = 450 A, VGE = 15 V | |
| Collector-emitter saturation voltage | VCE sat | V | 2.35 | IC = 450 A, VGE = 15 V, Tvj = 125C | ||
| Collector-emitter saturation voltage | VCE sat | V | 2.30 | IC = 450 A, VGE = 15 V, Tvj = 150C | ||
| Gate threshold voltage | VGEth | V | 5.2 | 5.8 | 6.4 | IC = 18.0 mA, VCE = VGE, Tvj = 25C |
| Gate charge | QG | C | 4.60 | VGE = -15 V ... +15 V | ||
| Internal gate resistor | RGint | 1.7 | Tvj = 25C | |||
| Input capacitance | Cies | nF | 36.0 | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V | ||
| Reverse transfer capacitance | Cres | nF | 1.15 | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V | ||
| Collector-emitter cut-off current | ICES | mA | 3.0 | VCE = 1700 V, VGE = 0 V, Tvj = 25C | ||
| Gate-emitter leakage current | IGES | nA | 400 | VCE = 0 V, VGE = 20 V, Tvj = 25C | ||
| Turn-on delay time, inductive load | td on | s | 0.21 | 0.26 | IC = 450 A, VCE = 900 V, VGE = 15 V, RGon = 3.3 | |
| Rise time, inductive load | tr | s | 0.11 | 0.12 | IC = 450 A, VCE = 900 V, VGE = 15 V, RGon = 3.3 | |
| Turn-off delay time, inductive load | td off | s | 0.80 | 1.00 | IC = 450 A, VCE = 900 V, VGE = 15 V, RGoff = 3.3 | |
| Fall time, inductive load | tf | s | 0.30 | 0.60 | IC = 450 A, VCE = 900 V, VGE = 15 V, RGoff = 3.3 | |
| Turn-on energy loss per pulse | Eon | mJ | 105 | 145 | IC = 450 A, VCE = 900 V, LS = 35 nH, VGE = 15 V, di/dt = 3900 A/s, RGon = 3.3 | |
| Turn-off energy loss per pulse | Eoff | mJ | 98.0 | 170 | IC = 450 A, VCE = 900 V, LS = 35 nH, VGE = 15 V, du/dt = 3000 V/s, RGoff = 3.3 | |
| Short circuit capability | ISC | A | 2300 | VGE 15 V, VCC = 1000 V, VCEmax = VCES - LsCE di/dt, Tvj = 150C, tP 10 s | ||
| Thermal resistance, junction to case | RthJC | K/W | 0.06 | per IGBT | ||
| Thermal resistance, case to heatsink | RthCH | K/W | 0.029 | per IGBT, Paste = 1 W/(mK) | ||
| Temperature under switching conditions | Tvj op | C | -40 | 150 | ||
| Diode, Inverter | ||||||
| Repetitive peak reverse voltage | VRRM | V | 1700 | Tvj = 25C | ||
| Continuous DC forward current | IF | A | 450 | |||
| Repetitive peak forward current | IFRM | A | 900 | tP = 1 ms | ||
| It - value | It | As | 20000 | VR = 0 V, tP = 10 ms, Tvj = 125C | ||
| Forward voltage | VF | V | 1.80 | 2.20 | IF = 450 A, VGE = 0 V | |
| Peak reverse recovery current | IRM | A | 480 | 585 | IF = 450 A, - diF/dt = 3900 A/s, VR = 900 V, VGE = -15 V | |
| Recovered charge | Qr | C | 95.0 | 190 | IF = 450 A, - diF/dt = 3900 A/s, VR = 900 V, VGE = -15 V | |
| Reverse recovery energy | Erec | mJ | 60.0 | 125 | IF = 450 A, - diF/dt = 3900 A/s, VR = 900 V, VGE = -15 V | |
| Thermal resistance, junction to case | RthJC | K/W | 0.10 | per diode | ||
| Thermal resistance, case to heatsink | RthCH | K/W | 0.048 | per diode, Paste = 1 W/(mK) | ||
| Temperature under switching conditions | Tvj op | C | -40 | 150 | ||
| NTC-Thermistor | ||||||
| Rated resistance | R25 | k | 5.00 | TC = 25C | ||
| Deviation of R100 | R/R | % | -5 | 5 | TC = 100C, R100 = 493 | |
| Power dissipation | P25 | mW | 20.0 | TC = 25C | ||
| B-Value | B25/50 | K | 3375 | R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))] | ||
| B-Value | B25/80 | K | 3411 | R2 = R25 exp [B25/80(1/T2 - 1/(298.15 K))] | ||
| B-Value | B25/100 | K | 3433 | R2 = R25 exp [B25/100(1/T2 - 1/(298.15 K))] | ||
| Module | ||||||
| Isolation test voltage | VISOL | kV | 3.4 | RMS, f = 50 Hz, t = 1 min. | ||
| Material of module baseplate | Cu | |||||
| Internal isolation | Al2O3 | Basic insulation (class 1, IEC 61140) | ||||
| Creepage distance terminal to heatsink | mm | 14.5 | ||||
| Creepage distance terminal to terminal | mm | 13.0 | ||||
| Clearance terminal to heatsink | mm | 12.5 | ||||
| Clearance terminal to terminal | mm | 10.0 | ||||
| Comperative tracking index | CTI | > 200 | min. | |||
| Thermal resistance, case to heatsink | RthCH | K/W | 0.009 | per module, Paste = 1 W/(mK) | ||
| Stray inductance module | LsCE | nH | 20 | |||
| Module lead resistance, terminals - chip | RCC'+EE' | m | 1.10 | TC = 25C, per switch | ||
| Storage temperature | Tstg | C | -40 | 125 | ||
| Mounting torque for module mounting | M | Nm | 3.00 | 6.00 | Screw M5 - Mounting according to valid application note | |
| Terminal connection torque | M | Nm | 3.0 | 6.0 | Screw M6 - Mounting according to valid application note | |
| Weight | G | g | 345 | |||
2411220115_Infineon-FF450R17ME4_C541079.pdf
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