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quality Dual N P Channel Enhancement Mode HXY MOSFET FDS4559 HXY with Low Gate Charge and 60V Voltage Rating factory
quality Dual N P Channel Enhancement Mode HXY MOSFET FDS4559 HXY with Low Gate Charge and 60V Voltage Rating factory

Dual N P Channel Enhancement Mode HXY MOSFET FDS4559 HXY with Low Gate Charge and 60V Voltage Rating

Key Attributes
Model Number: FDS4559-HXY
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
6A;5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@10V,3.5A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
49.4pF;50pF
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
1.148nF@25V;1.137nF@15V
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
20.3nC@10V;12.1nC@4.5V
Mfr. Part #:
FDS4559-HXY
Package:
SOP-8
Product Description

FDS4559-HXY Dual N+P-Channel Enhancement Mode MOSFET

The FDS4559-HXY utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This dual N+P-Channel MOSFET is suitable for battery protection and various switching applications, including wireless charging and brushless motor drivers.

Product Attributes

  • Brand: HUAXUANYANG ELECTRONICS
  • Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
  • Product ID: FDS4559-HXY
  • Package: SOP-8(SO-8)
  • Marking: 4559XXX
  • Quantity: 3000 PCS
  • Website: www.hxymos.com

Technical Specifications

Parameter N-Channel (Typ.) P-Channel (Typ.) Units
General Features
VDS 60V -60V V
ID 6A -5A A
RDS(ON) @ VGS=10V 40m (Max 48m) 70m (Max 100m) m
RDS(ON) @ VGS=4.5V (N-Ch) / -4.5V (P-Ch) 48m (Max 60m) 100m (Max 115m) m
Absolute Maximum Ratings (TC=25 unless otherwise noted)
VDS 60V -60V V
VGS 20V 20V V
ID@TA=25 (VGS @ 10V/ -10V) 6.0A -5.0A A
IDM (Pulsed Drain Current) 11A -8.5A A
EAS (Single Pulse Avalanche Energy) 22.5mJ 35.3mJ mJ
PD@TA=25 (Total Power Dissipation) 2.5W W
TSTG / TJ (Storage/Operating Junction Temp. Range) -55 to 150
N-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)
V(BR)DSS (Drain-Source Breakdown Voltage) 60V - V
VGS(th) (Gate Threshold Voltage) 1.6V (Typ.) - V
RDS(on) (Static Drain-Source on-Resistance) @ VGS=10V, ID=5A 40m (Max 48m) - m
Ciss (Input Capacitance) 1148pF (Typ.) - pF
Coss (Output Capacitance) 58.5pF (Typ.) - pF
Crss (Reverse Transfer Capacitance) 49.4pF (Typ.) - pF
Qg (Total Gate Charge) @ VDS=30V, ID=2.5A, VGS=10V 20.3nC (Typ.) - nC
td(on) (Turn-on Delay Time) @ VGS=10V 7.6ns (Typ.) - ns
td(off) (Turn-off Delay Time) 15ns (Typ.) - ns
P-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS (Drain-Source Breakdown Voltage) - -60V V
VGS(th) (Gate Threshold Voltage) - -2.5V (Max) V
RDS(ON) (Static Drain-Source On-Resistance) @ VGS=-10V , ID=-3.5A - 70m (Max 100m) m
Qg (Total Gate Charge) @ VGS=-4.5V - 12.1nC (Typ.) nC
Td(on) (Turn-On Delay Time) @ VGS=-10V - 9.2ns (Typ.) ns
Td(off) (Turn-Off Delay Time) - 46.7ns (Typ.) ns

2509181601_HXY-MOSFET-FDS4559-HXY_C4748740.pdf

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