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quality soft commutation Infineon IHW25N120E1 IGBT with positive temperature coefficient and low EMI performance factory
quality soft commutation Infineon IHW25N120E1 IGBT with positive temperature coefficient and low EMI performance factory

soft commutation Infineon IHW25N120E1 IGBT with positive temperature coefficient and low EMI performance

Key Attributes
Model Number: IHW25N120E1
Product Custom Attributes
Pd - Power Dissipation:
231W
Td(off):
249ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
31pF
Input Capacitance(Cies):
1.3nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@0.8mA
Operating Temperature:
-40℃~+150℃
Gate Charge(Qg):
147nC@15V
Pulsed Current- Forward(Ifm):
75A
Output Capacitance(Coes):
37pF
Switching Energy(Eoff):
80uJ
Mfr. Part #:
IHW25N120E1
Package:
TO-247-3
Product Description

Product Description

The IHW25N120E1 is a Resonant Soft-Switching Series Reverse conducting IGBT featuring a powerful monolithic body diode with low forward voltage, specifically designed for soft commutation. Utilizing TRENCHSTOPTM technology, it offers very tight parameter distribution, high ruggedness, stable temperature behavior, low VCEsat, and easy parallel switching capability due to a positive temperature coefficient in VCEsat. This IGBT also provides low EMI and is qualified according to JEDEC standards for its target applications. It is Pb-free lead plated and RoHS compliant.

Product Attributes

  • Brand: Infineon
  • Technology: TRENCHSTOPTM
  • Certifications: JEDEC qualified, RoHS compliant
  • Lead Plating: Pb-free

Technical Specifications

TypeVCE (V)IC (A)VCEsat, Tvj=25C (V)Tvjmax (C)MarkingPackage
IHW25N120E11200251.5150H25ME1PG-TO247-3
ParameterSymbolConditionsValueUnit
Collector-emitter breakdown voltageV(BR)CESVGE = 0V, IC = 0.50mA1200V
Collector-emitter saturation voltageVCEsatVGE = 15.0V, IC = 25.0A1.50 (Tvj=25C) / 1.65 (Tvj=100C) / 1.75 (Tvj=150C)V
Diode forward voltageVFVGE = 0V, IF = 25.0A1.90 (Tvj=25C) / 2.15 (Tvj=100C) / 2.35 (Tvj=150C)V
Gate-emitter threshold voltageVGE(th)IC = 0.80mA, VCE = VGE4.0 - 8.0V
Zero gate voltage collector currentICESVCE = 1200V, VGE = 0V500 (Tvj=25C) / 100 (Tvj=150C)A
Gate-emitter leakage currentIGESVCE = 0V, VGE = 20V100nA
TransconductancegfsVCE = 20V, IC = 25.0A23.0S
Integrated gate resistorrG8.5
Input capacitanceCiesVCE = 25V, VGE = 0V, f = 1MHz1300pF
Output capacitanceCoesVCE = 25V, VGE = 0V, f = 1MHz37pF
Reverse transfer capacitanceCresVCE = 25V, VGE = 0V, f = 1MHz31pF
Gate chargeQGVCC = 960V, IC = 25.0A, VGE = 15V147.0nC
Internal emitter inductanceLEmeasured 5mm from case13.0nH
Turn-off delay timetd(off)Tvj = 25C, VCC = 105V, IC = 25.0A, VGE = 0.0/18.0V, RG(off) = 10.2229ns
Fall timetfTvj = 25C, VCC = 105V, IC = 25.0A, VGE = 0.0/18.0V, RG(off) = 10.21020ns
Turn-off energy, soft switchingEoffTvj = 25C, VCC = 105V, IC = 25.0A, VGE = 0.0/18.0V, RG(off) = 10.2, dv/dt = 83.0V/s0.08mJ
Turn-off delay timetd(off)Tvj = 25C, VCC = 210V, IC = 50.0A, VGE = 0.0/18.0V, RG(off) = 10.2249ns
Fall timetfTvj = 25C, VCC = 210V, IC = 50.0A, VGE = 0.0/18.0V, RG(off) = 10.2850ns
Turn-off energy, soft switchingEoffTvj = 25C, VCC = 210V, IC = 50.0A, VGE = 0.0/18.0V, RG(off) = 10.2, dv/dt = 166.0V/s0.24mJ
Turn-off delay timetd(off)Tvj = 150C, VCC = 105V, IC = 25.0A, VGE = 0.0/18.0V, RG(off) = 10.2240ns
Fall timetfTvj = 150C, VCC = 105V, IC = 25.0A, VGE = 0.0/18.0V, RG(off) = 10.21764ns
Turn-off energy, soft switchingEoffTvj = 150C, VCC = 105V, IC = 25.0A, VGE = 0.0/18.0V, RG(off) = 10.2, dv/dt = 83.0V/s0.19mJ
Turn-off delay timetd(off)Tvj = 150C, VCC = 210V, IC = 50.0A, VGE = 0.0/18.0V, RG(off) = 10.2253ns
Fall timetfTvj = 150C, VCC = 210V, IC = 50.0A, VGE = 0.0/18.0V, RG(off) = 10.21424ns
Turn-off energy, soft switchingEoffTvj = 150C, VCC = 210V, IC = 50.0A, VGE = 0.0/18.0V, RG(off) = 10.2, dv/dt = 166.0V/s0.52mJ
IGBT thermal resistance, junction - caseRth(j-c)0.54K/W
Diode thermal resistance, junction - caseRth(j-c)0.54K/W
Thermal resistance junction - ambientRth(j-a)40K/W
DC collector currentICTC = 25C50.0A
DC collector currentICTC = 100C25.0A
Pulsed collector currentICpulstp limited by Tvjmax75.0A
Turn off safe operating areaVCE 1200V, Tvj 150C1)75.0A
Diode forward currentIFTC = 25C50.0A
Diode forward currentIFTC = 100C25.0A
Diode pulsed currentIFpulstp limited by Tvjmax75.0A
Gate-emitter voltageVGE20V
Transient Gate-emitter voltagetp 10s, D < 0.01025V
Power dissipationPtotTC = 25C231.0W
Power dissipationPtotTC = 100C92.4W
Operating junction temperatureTvj-40...+150C
Storage temperatureTstg-55...+150C
Soldering temperaturewave soldering 1.6mm from case for 10s260C
Mounting torqueMM3 screw0.6Nm

2410121717_Infineon-IHW25N120E1_C536121.pdf

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