IGBT module Infineon IKW40N65F5 with 650V voltage and 74A current featuring RAPID 1 diode technology
Key Attributes
Model Number:
IKW40N65F5
Product Custom Attributes
Pd - Power Dissipation:
255W
Td(off):
160ns
Td(on):
19ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
9pF
Input Capacitance(Cies):
2.5nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@0.4mA
Gate Charge(Qg):
95nC@15V
Pulsed Current- Forward(Ifm):
120A
Output Capacitance(Coes):
50pF
Reverse Recovery Time(trr):
60ns
Switching Energy(Eoff):
100uJ
Turn-On Energy (Eon):
360uJ
Mfr. Part #:
IKW40N65F5
Package:
TO-247-3
Product Description
Product Overview
The IKW40N65F5 and IKP40N65F5 are high-speed 5 FAST IGBTs in TRENCHSTOPTM 5 technology, copacked with RAPID 1 fast and soft anti-parallel diodes. These 650V DuoPack devices offer best-in-class efficiency in hard switching and resonant topologies, low Qg, and a maximum junction temperature of 175C. They are qualified according to JEDEC for target applications and are Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPTM 5
- Diode Type: RAPID 1
- Certifications: JEDEC, RoHS compliant
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE | IC (TC=25C) | VCEsat (Tvj=25C) | Tvjmax | Marking | Package |
| IKW40N65F5 | 650V | 74.0A | 1.6V | 175C | K40EF5 | PG-TO247-3 |
| IKP40N65F5 | 650V | 74.0A | 1.6V | 175C | K40EF5 | PG-TO220-3 |
2501061740_Infineon-IKW40N65F5_C536217.pdf
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