High Blocking Voltage Silicon Carbide MOSFET HXY MOSFET AIMW120R035M1HXKSA1-HXY for Power Conversion
Key Attributes
Model Number:
AIMW120R035M1HXKSA1-HXY
Product Custom Attributes
Mfr. Part #:
AIMW120R035M1HXKSA1-HXY
Package:
TO-247
Product Description
Product Overview
The AIMW120R035M1HXKSA1 is a 3rd Generation SiC Power MOSFET from HUAXUANYANG ELECTRONICS CO.,LTD. It features high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. This MOSFET offers higher system efficiency, reduced cooling requirements, and increased power density, making it suitable for demanding applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Material: SiC (Silicon Carbide)
- Certifications: Halogen free, RoHS compliant
- Origin: Shenzhen, China
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| Drain - Source Voltage | VDSmax | 1200 | V | VGS = 0 V, ID = 100 A | |
| Gate - Source Voltage (dynamic) | VGSmax | -8/+19 | V | AC (f >1 Hz) | Note 1 |
| Gate - Source Voltage (static) | VGSop | -4/+15 | V | Static | Note 2 |
| Continuous Drain Current | ID | 63 | A | VGS = 15 V, TC = 25C | Fig. 19 |
| Continuous Drain Current | ID | 48 | A | VGS = 15 V, TC = 100C | |
| Pulsed Drain Current | ID(pulse) | 120 | A | Pulse width tP limited by Tjmax | |
| Power Dissipation | PD | 283 | W | TC=25C, TJ = 175 C | Fig. 20 |
| Operating Junction and Storage Temperature | TJ , Tstg | -40 to +175 | C | ||
| Solder Temperature | TL | 260 | C | 1.6mm (0.063) from case for 10s | |
| Mounting Torque | Md | 8.8 | Nm lbf-in | M3 or 6-32 screw | |
| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 | V | VGS = 0 V, ID = 100 A | |
| Gate Threshold Voltage | VGS(th) | 1.8 | V | VDS = VGS, ID = 11.5 mA | Fig. 11 |
| Gate Threshold Voltage | VGS(th) | 2.5 | V | VDS = VGS, ID = 11.5 mA, TJ = 175C | |
| Gate Threshold Voltage | VGS(th) | 3.6 | V | VDS = VGS, ID = 11.5 mA | |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS = 1200 V, VGS = 0 V | |
| Zero Gate Voltage Drain Current | IDSS | 50 | A | VDS = 1200 V, VGS = 0 V | |
| Gate-Source Leakage Current | IGSS | 10 | nA | VGS = 15 V, VDS = 0 V | |
| Gate-Source Leakage Current | IGSS | 250 | nA | VGS = 15 V, VDS = 0 V | |
| Drain-Source On-State Resistance | RDS(on) | 23 | m | VGS = 15 V, ID = 40 A | Fig. 4, 5, 6 |
| Drain-Source On-State Resistance | RDS(on) | 32 | m | VGS = 15 V, ID = 40 A | Fig. 4, 5, 6 |
| Drain-Source On-State Resistance | RDS(on) | 43 | m | VGS = 15 V, ID = 40 A | Fig. 4, 5, 6 |
| Drain-Source On-State Resistance | RDS(on) | 57.6 | m | VGS = 15 V, ID = 40 A, TJ = 175C | |
| Transconductance | gfs | 27 | S | VDS= 20 V, IDS= 40 A | Fig. 7 |
| Transconductance | gfs | 22 | S | VDS= 20 V, IDS= 40 A, TJ = 175C | |
| Input Capacitance | Ciss | 3357 | pF | VGS = 0 V, VDS = 1000 V f = 100 kHz VAC = 25 mV | Fig. 17, 18 |
| Output Capacitance | Coss | 129 | pF | ||
| Reverse Transfer Capacitance | Crss | 8 | pF | ||
| Stored Energy | Eoss | 76 | J | Fig. 16 | |
| Turn-On Switching Energy (SiC Diode FWD) | EON | 1.94 | mJ | VDS = 800 V, VGS = -4 V/+15 V, ID = 40A, RG(ext) = 5, L= 157 H, Tj = 175C | Fig. 26 |
| Turn Off Switching Energy (SiC Diode FWD) | EOFF | 0.79 | mJ | VDS = 800 V, VGS = -4 V/+15 V, ID = 40A, RG(ext) = 5, L= 157 H, Tj = 175C | Fig. 26 |
| Turn-On Switching Energy (Body Diode FWD) | EON | 3.10 | mJ | VDS = 800 V, VGS = -4 V/+15 V, ID = 40A, RG(ext) = 5, L= 157 H, Tj = 175C | Fig. 26 |
| Turn Off Switching Energy (Body Diode FWD) | EOFF | 0.72 | mJ | VDS = 800 V, VGS = -4 V/+15 V, ID = 40A, RG(ext) = 5, L= 157 H, Tj = 175C | Fig. 26 |
| Turn-On Delay Time | td(on) | 107 | ns | VDD = 800 V, VGS = -4 V/15 V RG(ext) = 5 , ID = 40 A, L= 157 Timing relative to VDS, Inductive load | Fig. 27 |
| Rise Time | tr | 22 | ns | ||
| Turn-Off Delay Time | td(off) | 39 | ns | ||
| Fall Time | tf | 19 | ns | ||
| Internal Gate Resistance | RG(int) | 1.7 | f = 1 MHz, VAC = 25 mV | ||
| Gate to Source Charge | Qgs | 35 | nC | VDS = 800 V, VGS = -4 V/15 V ID = 40 A Per IEC60747-8-4 pg 21 | Fig. 12 |
| Gate to Drain Charge | Qgd | 40 | nC | ||
| Total Gate Charge | Qg | 114 | nC | ||
| Diode Forward Voltage | VSD | 4.6 | V | VGS = -4 V, ISD = 20 A, TJ = 25 C | Fig. 8, 9, 10 |
| Diode Forward Voltage | VSD | 4.2 | V | VGS = -4 V, ISD = 20 A, TJ = 175 C | Fig. 8, 9, 10 |
| Continuous Diode Forward Current | IS | 62 | A | VGS = -4 V, TC = 25C | Note 1 |
| Diode pulse Current | IS, pulse | 120 | A | VGS = -4 V, pulse width tP limited by Tjmax | Note 1 |
| Reverse Recover time | trr | 69 | ns | VGS = -4 V, ISD = 40 A, VR = 800 V dif/dt = 1500 A/s, TJ = 175 C | Note 1 |
| Reverse Recovery Charge | Qrr | 848 | nC | ||
| Peak Reverse Recovery Current | Irrm | 19 | A | ||
| Thermal Resistance from Junction to Case | RJC | 0.45 | C/W | Fig. 21 | |
| Thermal Resistance From Junction to Ambient | RJA | 40 | C/W |
2512231156_HXY-MOSFET-AIMW120R035M1HXKSA1-HXY_C52043408.pdf
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