Low Gate Charge and Excellent RDS ON HXY MOSFET IRLZ44NPBF HXY N Channel Enhancement Mode Transistor
Key Attributes
Model Number:
IRLZ44NPBF-HXY
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
110pF
Number:
1 N-channel
Output Capacitance(Coss):
430pF
Pd - Power Dissipation:
120W
Input Capacitance(Ciss):
4.05nF
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
IRLZ44NPBF-HXY
Package:
TO-220
Product Description
Product Overview
The IRLZ44NPBF is an N-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS CO.,LTD. It utilizes advanced trench technology and design to achieve excellent RDS(ON) with low gate charge, making it suitable for high-efficiency switch-mode power supplies and power factor correction applications. It is also applicable in electronic lamp ballasts.
Product Attributes
- Brand: HXY
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: TO-220 (TO-220AB)
- Quantity per Pack: 50
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | - | 60 | 68 | nA |
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 2.0 | - | 4.0 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=25A | - | 17 | 20 | m |
| Transconductance | gFS | VDS=30V, ID=40A | 15 | - | - | S |
| Diode Forward Voltage | VSD | VGS=0V, IS=60A | - | 1.5 | - | V |
| Diode Forward Current | IS | (Note 2) | - | - | 60 | A |
| Input Capacitance | Ciss | - | 4050 | - | pF | |
| Output Capacitance | Coss | - | 430 | - | pF | |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, F=1.0MHz | - | 110 | - | pF |
Absolute Maximum Ratings
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | 60 | V |
| VGS | Gate-Source Voltage | 20 | V |
| ID@TC=25 | Drain Current | 60 | A |
| IDM | Pulsed Drain Current | 240 | A |
| PD@TC=25 | Total Power Dissipation | 120 | W |
| TSTG | Storage Temperature Range | -55 to 150 | |
| TJ | Operating Junction Temperature Range | -55 to 150 |
Package Information
| Symbol | Unit | Min | Nom | Max |
|---|---|---|---|---|
| A | mm | 4.40 | 4.57 | 4.70 |
| A1 | mm | 1.27 | 1.30 | 1.33 |
| A2 | mm | 2.35 | 2.40 | 2.50 |
| b | mm | 0.77 | 0.80 | 0.90 |
| b2 | mm | 1.17 | 1.27 | 1.36 |
| c | mm | 0.48 | 0.50 | 0.56 |
| D | mm | 15.40 | 15.60 | 15.80 |
| D1 | mm | 9.00 | 9.10 | 9.20 |
| DEP | mm | 0.05 | 0.10 | 0.20 |
| E | mm | 9.80 | 10.00 | 10.20 |
| E1 | mm | - | 8.70 | - |
| E2 | mm | 9.80 | 10.00 | 10.20 |
| e | mm | 2.54 BSC | ||
| e1 | mm | 5.08 BSC | ||
| H1 | mm | 6.40 | 6.50 | 6.60 |
| L | mm | 12.75 | 13.50 | 13.65 |
| L1 | mm | - | 3.10 | 3.30 |
| L2 | mm | 2.50 REF | ||
| P | mm | 3.50 | 3.60 | 3.63 |
| P1 | mm | 3.50 | 3.60 | 3.63 |
| Q | mm | 2.73 | 2.80 | 2.87 |
| 1 | 5 | 7 | 9 | |
| 2 | 1 | 3 | 5 | |
| 3 | 1 | 3 | 5 |
2509181722_HXY-MOSFET-IRLZ44NPBF-HXY_C22367197.pdf
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