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quality SiC MOSFET HXY MOSFET HC3M0045065D Featuring Separate Driver Source Pin and Optimized Package Design factory
quality SiC MOSFET HXY MOSFET HC3M0045065D Featuring Separate Driver Source Pin and Optimized Package Design factory

SiC MOSFET HXY MOSFET HC3M0045065D Featuring Separate Driver Source Pin and Optimized Package Design

Key Attributes
Model Number: HC3M0045065D
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
49A
RDS(on):
33mΩ@20V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Mfr. Part #:
HC3M0045065D
Package:
TO-247
Product Description

SiC Power MOSFET N-Channel Enhancement Mode

The HUAXUANYANG HXY HC3M0045065D is a 3rd generation SiC Power MOSFET featuring an N-Channel Enhancement Mode design. It utilizes optimized package with a separate driver source pin for enhanced performance. This MOSFET offers high blocking voltage with low on-resistance and high-speed switching with low capacitances. Its fast intrinsic diode with low reverse recovery (Qrr) contributes to reduced switching losses and minimized gate ringing. The product is halogen-free and RoHS compliant, leading to higher system efficiency, reduced cooling requirements, increased power density, and higher system switching frequencies.

Product Attributes

  • Brand: HUAXUANYANG
  • Model: HC3M0045065D
  • Origin: Shenzhen, China
  • Technology: 3rd generation SiC MOSFET
  • Certifications: Halogen free, RoHS compliant

Applications

  • Renewable energy
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies

Technical Specifications

Parameter Symbol Test Condition Value Unit Min. Typ. Max.
Maximum Ratings
Drain-source voltage VDS TC = 25 C unless otherwise specified 650 V
Continuous drain current ID TC = 25C 123 A
Continuous drain current ID TC = 100C 35 A
Pulsed drain current ID pulse (TC = 25C, tp limited by Tjmax) 242 A
Gate-Source voltage VGS -10/+25 V
Power dissipation Ptot (TC = 25C) 1000 W
Avalanche energy, single pulse EAS (L=10mH) 49 mJ
Operating junction and storage temperature Tj , Tstg -55...+175 C
Thermal Resistance
Thermal resistance, junction case RthJC Max 0.62 C/W
Thermal resistance, junction ambient RthJA Max 40 C/W
Static Characteristic
Drain-source breakdown voltage BVDSS VGS=0V, ID = 250uA 650 V
Gate threshold voltage VGS(th) VDS=VGS,ID=7mA 5.6 V 19 25
Drain-source on-state resistance RDS(on) VGS=20V, ID=17.6A, Tj=25C 45 m 49
Drain-source on-state resistance RDS(on) VGS=20V, ID=17.6A, Tj=175C m 65
Zero gate voltage drain current IDSS VDS=650V,VGS=0V A 1 10
Zero gate voltage drain current IDSS VDS=650V,VGS=0V, Tj=175C A 250
Gate-source leakage current IGSS VGS=20V nA 100
Dynamic Characteristic
Input Capacitance Ciss VDS = 650V, VGS = 0V, TJ = 25C, f = 1MHz 1823 pF
Output Capacitance Coss VDS = 650V, VGS = 0V, TJ = 25C, f = 1MHz 156 pF
Reverse Transfer Capacitance Crss VDS = 650V, VGS = 0V, TJ = 25C, f = 1MHz 40 pF
Gate Total Charge QG VDS=400V, VGS=-5/20V, ID=17.6A 49 nC
Gate-Source charge Qgs VGS=20V, VDS=0V 19 nC
Gate-Drain charge Qgd VGS=18V, ID=17.6A 15 nC
Turn-on delay time td(on) VDD = 400V, VGS = -5/+20V, ID = 17.6A, RG = 10, L = 100uH ns 19
Rise time tr VDD = 400V, VGS = -5/+20V, ID = 17.6A, RG = 10, L = 100uH ns 26
Turn-off delay time td(off) VDD = 400V, VGS = -5/+20V, ID = 17.6A, RG = 10, L = 100uH ns 45
Fall time tf VDD = 400V, VGS = -5/+20V, ID = 17.6A, RG = 10, L = 100uH ns 33
Turn-On Switching Energy EON VDS=400V, VGS=-5/20V, ID=17.6A, RG=10, L=100uH J 188
Turn-Off Switching Energy EOFF VDS=400V, VGS=-5/20V, ID=17.6A, RG=10, L=100uH J 190
Body Diode Characteristic
Body Diode Forward Voltage VSD VGS=0V,ISD=8.8A, TJ=25C V 1.7 2.6
Body Diode Forward Voltage VSD VGS=0V,ISD=8.8A, TJ=175C V 4.0
Body Diode Reverse Recovery Time trr VR = 400V, ID = 17.6A, di/dt = 1000A/S ns 15
Body Diode Reverse Recovery Charge Qrr VR = 400V, ID = 17.6A, di/dt = 1000A/S nC 156

2512231155_HXY-MOSFET-HC3M0045065D_C22449546.pdf

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