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quality HXY MOSFET HXY100N03DF N Channel Enhancement Mode MOSFET with 192A Pulsed Drain Current and Low RDS factory
quality HXY MOSFET HXY100N03DF N Channel Enhancement Mode MOSFET with 192A Pulsed Drain Current and Low RDS factory

HXY MOSFET HXY100N03DF N Channel Enhancement Mode MOSFET with 192A Pulsed Drain Current and Low RDS

Key Attributes
Model Number: HXY100N03DF
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
315pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
62.5W
Input Capacitance(Ciss):
3.075nF@15V
Gate Charge(Qg):
31.6nC@4.5V
Mfr. Part #:
HXY100N03DF
Package:
DFN3X3-8L
Product Description

Product Description

The HXY100N03DF is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.

Product Attributes

  • Brand: HUA XUAN YANG ELECTRONICS
  • Product ID: HXY100N03DF
  • Package: DFN3X3-8L
  • Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
  • Material: N-Channel Enhancement Mode MOSFET
  • Certifications: Not specified

Technical Specifications

SymbolParameterConditionsMin.Typ.Max.Units
VDSDrain-Source Voltage30V
VGSGate-Source Voltage20V
ID@TC=25Continuous Drain Current, VGS @ 10V60A
ID@TC=100Continuous Drain Current, VGS @ 10V42A
IDMPulsed Drain Current192A
EASSingle Pulse Avalanche Energy144.7mJ
IASAvalanche Current53.8A
PD@TC=25Total Power Dissipation62.5W
PD@TA=25Total Power Dissipation4.5W
TSTGStorage Temperature Range-55150
TJOperating Junction Temperature Range
RJAThermal Resistance Junction-ambient162/W
RJCThermal Resistance Junction-Case2.4/W
BVDSSDrain-Source Breakdown VoltageVGS=0V , ID=250uA30V
BVDSS/TJBVDSS Temperature CoefficientReference to 25 , ID=1mA0.0213V/
RDS(ON)Static Drain-Source On- ResistanceVGS=10V , ID=30A45.5
VGS=4.5V , ID=15A5.26
VGS(th)Gate Threshold VoltageVGS=VDS , ID =250uA1.02.5V
VGS(th)VGS(th) Temperature Coefficient-5.8mV/
IDSSDrain-Source Leakage CurrentVDS=24V , VGS=0V , TJ=251uA
IDSSDrain-Source Leakage CurrentVDS=24V , VGS=0V , TJ=555uA
IGSSGate-Source Leakage CurrentVGS=20V , VDS=0V100nA
gfsForward TransconductanceDS=5V , ID=30A26.5S
RgGate ResistanceVDS=0V , VGS=0V , f=1MHz1.4
QgTotal Gate Charge (4.5V)VDS=15V , VGS=4.5V , ID=15A31.6nC
QgsGate-Source Charge8.6nC
QgdGate-Drain Charge11.7nC
Td(on)Turn-On Delay TimeVDD=15V , VGS=10V , RG=3.3 ID=15A9ns
TrRise Time19ns
Td(off)Turn-Off Delay Time58ns
TfFall Time15.2ns
CissInput CapacitanceVDS=15V , VGS=0V , f=1MHz3075pF
CossOutput Capacitance400pF
CrssReverse Transfer Capacitance315pF
ISContinuous Source CurrentVG=VD=0V , Force Current60A
ISMPulsed Source Current192A
VSDDiode Forward VoltageVGS=0V , IS=1A , TJ=251V

2509181544_HXY-MOSFET-HXY100N03DF_C3033464.pdf

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