HXY MOSFET TP65H035WS-HXY N Channel Silicon Carbide Transistor with High Power Density and Low Loss
Key Attributes
Model Number:
TP65H035WS-HXY
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
49A
Operating Temperature -:
-55℃~+175℃
RDS(on):
49mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
19pF
Pd - Power Dissipation:
242W
Input Capacitance(Ciss):
1.823nF
Output Capacitance(Coss):
190pF
Gate Charge(Qg):
96nC
Mfr. Part #:
TP65H035WS-HXY
Package:
TO-247
Product Description
Product Overview
The HUAXUANYANG HXY TP65H035WS is a 3rd generation SiC Power MOSFET, N-Channel Enhancement Mode, utilizing advanced SiC technology. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. The optimized package features a separate driver source pin, contributing to reduced switching losses, minimized gate ringing, higher system efficiency, reduced cooling requirements, increased power density, and higher system switching frequency. This MOSFET is halogen-free and RoHS compliant.
Product Attributes
- Brand: HUAXUANYANG
- Model: TP65H035WS
- Material: SiC (Silicon Carbide)
- Origin: Shenzhen, China
- Certifications: Halogen free, RoHS compliant
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Unit | Test Condition | Value | Type |
| Maximum Ratings | |||||
| Drain-source voltage | VDS | V | TC = 25 C unless otherwise specified | 650 | |
| Continuous drain current | ID | A | TC = 25C | 123 | |
| Continuous drain current | ID | A | TC = 100C | 35 | |
| Pulsed drain current | ID pulse | A | TC = 25C, tp limited by Tjmax | 242 | |
| Gate-Source voltage | VGS | V | -5/+20 | ||
| Power dissipation | Ptot | W | TC = 25C | 1000 | |
| Operating junction and storage temperature | Tj , Tstg | C | -55...+175 | ||
| Avalanche energy, single pulse | EAS | mJ | L=10mH | 49 | |
| Thermal Resistance | |||||
| Thermal resistance, junction case | RthJC | C/W | 0.62 | Max | |
| Thermal resistance, junction ambient | RthJA | C/W | 30 | Max | |
| Static Characteristic | |||||
| Drain-source on-state resistance | RDS(on) | VGS=20V, ID=17.6A, Tj=25C | 19 | typ. | |
| Drain-source on-state resistance | RDS(on) | VGS=20V, ID=17.6A, Tj=175C | 26 | typ. | |
| Zero gate voltage drain current | IDSS | A | VDS=650V,VGS=0V | 250 | max. |
| Zero gate voltage drain current | IDSS | mA | VDS=650V,VGS=0V, Tj=175C | 1 | max. |
| Gate threshold voltage | VGS(th) | V | VDS=VGS,ID=7mA | 4 | typ. |
| Drain-source breakdown voltage | BVDSS | V | VGS=0V, ID =250uA | 650 | |
| Gate-source leakage current | IGSS | nA | VGS=20V, VDS=0V | 100 | max. |
| Transconductance | gfs | S | VDS=20V,ID =17.6A | 19 | typ. |
| Dynamic Characteristic | |||||
| Input Capacitance | Ciss | pF | VGS=0V, VDS =20V, f =1MHz | 1823 | typ. |
| Output Capacitance | Coss | pF | VGS=0V, VDS =20V, f =1MHz | 188 | typ. |
| Reverse Transfer Capacitance | Crss | pF | VGS=0V, VDS =20V, f =1MHz | 45 | typ. |
| Gate Total Charge | QG | nC | VDS=400V, VGS = -5/+20V, ID = 17.6A | 49 | typ. |
| Gate-Source charge | Qgs | nC | VDS=400V, VGS = -5/+20V, ID = 17.6A | 33 | typ. |
| Gate-Drain charge | Qgd | nC | VDS=400V, VGS = -5/+20V, ID = 17.6A | 15 | typ. |
| Turn-on delay time | td(on) | ns | VDD = 400V, VGS = -5/+20V, ID = 17.6A, RG = 10, L = 100uH | 19 | typ. |
| Rise time | tr | ns | VDD = 400V, VGS = -5/+20V, ID = 17.6A, RG = 10, L = 100uH | 25 | typ. |
| Turn-off delay time | td(off) | ns | VDD = 400V, VGS = -5/+20V, ID = 17.6A, RG = 10, L = 100uH | 26 | typ. |
| Fall time | tf | ns | VDD = 400V, VGS = -5/+20V, ID = 17.6A, RG = 10, L = 100uH | 48 | typ. |
| Turn-On Switching Energy | EON | J | VGS=20V, VDD = 400V, ID = 17.6A, RG = 10, L = 100uH | 190 | typ. |
| Turn-Off Switching Energy | EOFF | J | VGS=-5/20V, VDD = 400V, ID = 17.6A, RG = 10, L = 100uH | 156 | typ. |
| Body Diode Characteristic | |||||
| Body Diode Forward Voltage | VSD | V | VGS=0V,ISD=8.8A, TJ=25C | 1.7 | typ. |
| Body Diode Forward Voltage | VSD | V | VGS=0V,ISD=8.8A, TJ=175C | 3.2 | typ. |
| Body Diode Reverse Recovery Charge | Qrr | nC | VR = 400V, ID = 17.6A, di/dt = 1000A/S | 40 | typ. |
| Body Diode Reverse Recovery Time | trr | ns | VGS=0V,ISD=8.8A, TJ=25C | 156 | typ. |
2509181733_HXY-MOSFET-TP65H035WS-HXY_C48972071.pdf
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