Power Switching N Channel MOSFET ISC IRFP260M Featuring Low Drain Source On Resistance and Operation
Key Attributes
Model Number:
IRFP260M
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
50A
RDS(on):
40mΩ@10V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Pd - Power Dissipation:
300W
Mfr. Part #:
IRFP260M
Package:
TO-247
Product Description
Product Overview
The IRFP260M/IIRFP260M is an N-Channel MOSFET Transistor designed for high-speed power switching applications. It features a low static drain-source on-resistance (RDS(on) 40m), enhancement mode operation, and 100% avalanche tested for robust device performance and reliable operation. Minimum lot-to-lot variations ensure consistent device characteristics.
Product Attributes
- Brand: isc
- Trademark: isc & iscsemi
- Origin: INCHANGE Semiconductor
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V; ID=250A | 200 | V | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS; ID=250A | 2.0 | 4.0 | V | |
| RDS(on) | Drain-Source On-Resistance | VGS=10V; ID=28A | 40 | m | ||
| IGSS | Gate-Source Leakage Current | VGS= 20V | 0.1 | A | ||
| IDSS | Drain-Source Leakage Current | VDS=200V; VGS= 0V | 25 | A | ||
| VSD | Diode forward voltage | IS=28A, VGS = 0V | 1.3 | V | ||
| VDSS | Drain-Source Voltage | 200 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous | 50 | A | |||
| IDM | Drain Current-Single Pulsed | 200 | A | |||
| PD | Total Dissipation @TC=25 | 300 | W | |||
| Tj Max. | Operating Junction Temperature | 175 | ||||
| Tstg | Storage Temperature | -55 | 175 | |||
| Rth(j-c) | Channel-to-case thermal resistance | 0.5 | /W | |||
| Rth(j-a) | Channel-to-ambient thermal resistance | 40 | /W |
2411220601_ISC-IRFP260M_C2976489.pdf
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