IGBT transistor HXY MOSFET IXXH60N65C4-HXY with 650V collector emitter voltage and 100A current rating
Key Attributes
Model Number:
IXXH60N65C4-HXY
Product Custom Attributes
Pd - Power Dissipation:
250W
Td(off):
124ns
Td(on):
24ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
93pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
183nC@15V
Reverse Recovery Time(trr):
136ns
Switching Energy(Eoff):
1.2mJ
Turn-On Energy (Eon):
1.4mJ
Input Capacitance(Cies):
3.356nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
179pF
Mfr. Part #:
IXXH60N65C4-HXY
Package:
TO-247
Product Description
Product Overview
The IXXH60N65C4 is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is suitable for applications requiring fast switching and low saturation voltage.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: IXXH60N65C4
- Package Type: TO-247
- Certifications: Halogen Free and Green Devices Available (RoHS Compliant)
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Website: www.hxymos.com
Technical Specifications
| Parameter | Value | Unit | Conditions |
| VCES (Collector-Emitter Voltage) | 650 | V | - |
| IC (Collector Current @TC=25C) | 100 | A | @TC=25C |
| IC (Collector Current @TC=100C) | 60 | A | @TC=100C |
| ICM (Pulsed Collector Current) | 200 | A | tp limited by TJmax |
| IF (Diode Continuous Forward Current @TC=25C) | 100 | A | @TC=25C |
| IF (Diode Continuous Forward Current @TC=100C) | 60 | A | @TC=100C |
| IFM (Diode Maximum Forward Current) | 200 | A | limited by TJmax |
| VGES (Gate-Emitter Voltage) | 30 | V | - |
| tSC (Short circuit withstand time) | 8 | s | VGE=15V, VCC400V, allowed number of short circuits<1000, times between short circuits1.0s, TJ175C |
| PD (Power Dissipation @TC=25C) | 250 | W | @TC=25C |
| TJmax, Tstg (Operating Junction and Storage Temperature Range) | -55 to 175 | - | |
| TL (Maximum Temperature for Soldering) | 260 | - | |
| RJC (Junction-to-Case for IGBT) | 0.60 | /W | - |
| RJC (Junction-to-Case for Diode) | 0.55 | /W | - |
| RJA (Junction-to-Ambient) | 40 | /W | - |
| VCE(sat) (Collector-Emitter Saturation Voltage) | 1.65 | V | VGE =15V, IC =60A, TJ=25 |
| VCE(sat) (Collector-Emitter Saturation Voltage) | 1.85 | V | VGE =15V, IC =60A, TJ=125 |
| VCE(sat) (Collector-Emitter Saturation Voltage) | 2.00 | V | VGE =15V, IC =60A, TJ=175 |
| VGE(TH) (Gate Threshold Voltage) | 4.3 - 6.3 | V | VCE=VGE,IC=1mA |
| VF (Diode Forward Voltage) | 1.65 | V | IF=50A, TJ=25 |
| VF (Diode Forward Voltage) | 1.57 | V | IF=50A, TJ=125 |
| VF (Diode Forward Voltage) | 1.47 | V | IF=50A, TJ=175 |
| ICES (Collector-Emitter Leakage Current) | 10 | A | VCE=650V, VGE=0V |
| IGES(F) (Gate-Emitter Forward Leakage Current) | 200 | nA | VGE=+20V |
| IGES(R) (Gate-Emitter Reverse Leakage Current) | -200 | nA | VGE=-20V |
| Cies (Input Capacitance) | 3356 | pF | VGE=0V, VCE=25V, f=1.0MHz |
| Coes (Output Capacitance) | 179 | pF | VGE=0V, VCE=25V, f=1.0MHz |
| Cres (Reverse Transfer Capacitance) | 93 | pF | VGE=0V, VCE=25V, f=1.0MHz |
| Qg (Gate charge) | 183 | nC | VCC=520V, ICE=60A, VGE=15V |
| Qge (Gate-emitter charge) | 26 | nC | VCC=520V, ICE=60A, VGE=15V |
| Qgc (Gate-collector charge) | 83 | nC | VCC=520V, ICE=60A, VGE=15V |
| td(on) (Turn-on Delay Time) | 24 | ns | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 |
| tr (Rise Time) | 88 | ns | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 |
| td(off) (Turn-Off Delay Time) | 124 | ns | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 |
| tf (Fall Time) | 73 | ns | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 |
| Eon (Turn-On Switching Loss) | 1.40 | mJ | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 |
| Eoff (Turn-Off Switching Loss) | 1.20 | mJ | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 |
| Ets (Total Switching Loss) | 2.60 | mJ | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 |
| td(on) (Turn-on Delay Time) | 30 | ns | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175 |
| tr (Rise Time) | 95 | ns | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175 |
| td(off) (Turn-Off Delay Time) | 152 | ns | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175 |
| tf (Fall Time) | 67 | ns | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175 |
| Eon (Turn-On Switching Loss) | 1.62 | mJ | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175 |
| Eoff (Turn-Off Switching Loss) | 1.50 | mJ | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175 |
| Ets (Total Switching Loss) | 3.12 | mJ | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175 |
| Trr (Reverse Recovery Time) | 136 | ns | IF=60A, VCC=400V, di/dt=200A/s, TJ=25 |
| Qrr (Reverse Recovery Charge) | 350 | nC | IF=60A, VCC=400V, di/dt=200A/s, TJ=25 |
| Irrm (Reverse Recovery Current) | 6.9 | A | IF=60A, VCC=400V, di/dt=200A/s, TJ=25 |
| Trr (Reverse Recovery Time) | 183 | ns | IF=60A, VCC=400V, di/dt=200A/s, TJ=175 |
| Qrr (Reverse Recovery Charge) | 560 | nC | IF=60A, VCC=400V, di/dt=200A/s, TJ=175 |
| Irrm (Reverse Recovery Current) | 7.8 | A | IF=60A, VCC=400V, di/dt=200A/s, TJ=175 |
2509181738_HXY-MOSFET-IXXH60N65C4-HXY_C49003432.pdf
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