1200V 140A IGBT low switching losses low conduction loss HXY MOSFET IKQ140N120CH7XKSA1-HXY ideal for EV charging applications
Key Attributes
Model Number:
IKQ140N120CH7XKSA1-HXY
Product Custom Attributes
Td(off):
359ns
Pd - Power Dissipation:
1.091kW
Td(on):
183ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
59.4pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.17V@2.24mA
Gate Charge(Qg):
473nC
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
137ns
Switching Energy(Eoff):
8.9mJ
Turn-On Energy (Eon):
11.9mJ
Input Capacitance(Cies):
16.191nF
Pulsed Current- Forward(Ifm):
560A
Output Capacitance(Coes):
407pF
Mfr. Part #:
IKQ140N120CH7XKSA1-HXY
Package:
TO-247P
Product Description
Product Overview
The IKQ140N120CH7XKSA1 is a 1200V, 140A IGBT designed for high-efficiency applications. It features high input impedance, low switching losses, low saturation voltage (VCE(SAT)), and low conduction loss. This device is copacked with a fast recovery diode, offering rugged transient reliability and low EMI. It is suitable for applications such as string solar inverters and EV-charging.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: IKQ140N120CH7XKSA1
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: TO-247P
- Packing: 30PCS
Technical Specifications
| Parameter | Conditions | Value | Units |
|---|---|---|---|
| Absolute Maximum Ratings | |||
| Collector emitter voltage (VCE) | 1200 | V | |
| DC collector current (IC) | TC = 25C | 240 | A |
| DC collector current (IC) | TC = 100C | 140 | A |
| Pulsed collector current (ICM) | TC = 25C | 560 | A |
| Maximum Diode forward current (IF) | TC = 25C | 240 | A |
| Maximum Diode forward current (IF) | TC = 100C | 140 | A |
| Diode pulsed current (IFM) | TC = 25C | 560 | A |
| Gate-Emitter voltage (VGE) | TVJ = 25C | 20 | V |
| Power Dissipation (Ptot) | TC = 25C | 1091 | W |
| Power Dissipation (Ptot) | TC = 100C | 545 | W |
| Operating Junction Temperature Range (TVJ) | -40 to +175 | C | |
| Storage Temperature Range (TSTG) | -55 to +150 | C | |
| Thermal Resistance | |||
| IGBT Thermal resistance: junction - case (RJC) | IGBT | 0.11 | C/W |
| Diode Thermal resistance: junction - case (RJC) | Diode | 0.17 | C/W |
| Electrical Characteristics | |||
| Collector - Emitter Breakdown Voltage (V(BR)CES) | VGE = 0V , IC = 0.5mA | 1200 | V |
| Collector - Emitter Saturation Voltage (VCESAT) | VGE = 15V , IC = 140A | 1.55 | V |
| Collector - Emitter Saturation Voltage (VCESAT) | VGE = 15V , IC = 140A ,TVJ = 175C | 1.81 | V |
| Diode forward voltage (VF) | TVJ = 25 C, IF=40A | 2.01 | V |
| Diode forward voltage (VF) | VGE = 0V , IC = 140A | 2.01 | V |
| Diode forward voltage (VF) | VGE = 0V , IC = 140A ,TVJ = 175C | 2.19 | V |
| Gate-Emitter threshold voltage (VGE(th)) | VGE = VCE, IC = 2.24mA | 5.17 | V |
| Zero Gate voltage Collector current (ICES) | VCE = 1200V , VGE = 0V | 40.0 | mA |
| Gate-Emitter leakage current (IGES) | VGE = 20V , VCE = 0V | 100 | nA |
| Dynamic Characteristics | |||
| Input Capacitance (Cies) | VGE = 0V, VCE = 25V, f = 100k Hz | 16191 | pF |
| Output Capacitance (Coes) | 407 | pF | |
| Reverse Transfer Capacitance (Cres) | 59.4 | pF | |
| Gate input resistance (RG) | f = 1M Hz | 0.8 | |
| Gate Charge (Qg) | VGE = 0 to 15V VCE = 960V, IC = 140A | 473 | nC |
| Gate to Emitter charge (Qge) | 122 | nC | |
| Gate to Collector charge (Qgc) | 112 | nC | |
| Switching Characteristics (Tvj = 25 C) | |||
| Turn-On Delay Time (td(on)) | VCC = 600 V, IC =140 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | 183 | ns |
| Turn-On Rise Time (tr) | 241 | ns | |
| Turn-Off Delay Time (td(off)) | 359 | ns | |
| Turn-Off Fall Time (tf) | 221 | ns | |
| Turn-on energy (Eon) | 11.9 | mJ | |
| Turn-off energy (Eoff) | 8.9 | mJ | |
| Total switching energy (Ets) | 20.8 | mJ | |
| Switching Characteristics (Tvj = 175 C) | |||
| Turn-On Delay Time (td(on)) | VCC = 600 V, IC =140 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | 165 | ns |
| Turn-On Rise Time (tr) | 262 | ns | |
| Turn-Off Delay Time (td(off)) | 395 | ns | |
| Turn-Off Fall Time (tf) | 274 | ns | |
| Turn-on energy (Eon) | 12.8 | mJ | |
| Turn-off energy (Eoff) | 10.1 | mJ | |
| Total switching energy (Ets) | 22.9 | mJ | |
| Diode Recovery Characteristics (Tvj = 25 C) | |||
| Reverse recovery time (Trr) | VCC = 600 V, IC =140 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | 137 | ns |
| Reverse recovery charge (Qrr) | 0.81 | mC | |
| Peak reverse recovery current (Irrm) | 9.3 | A | |
| Reverse recovery energy (Erec) | 9.3 | mJ | |
| Diode Recovery Characteristics (Tvj = 175 C) | |||
| Reverse recovery time (Trr) | VCC = 600 V, IC =140 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | 511 | ns |
| Reverse recovery charge (Qrr) | 5.4 | mC | |
| Peak reverse recovery current (Irrm) | 17.5 | A | |
| Reverse recovery energy (Erec) | 1.6 | mJ | |
2509181738_HXY-MOSFET-IKQ140N120CH7XKSA1-HXY_C49003418.pdf
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