Power Semiconductor Device HXY MOSFET IXYH40N65C3H1 HXY Suitable for EV Charger and Renewable Energy Systems
Key Attributes
Model Number:
IXYH40N65C3H1-HXY
Product Custom Attributes
Pd - Power Dissipation:
250W
Td(off):
136ns
Td(on):
26ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
1.52nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@250uA
Gate Charge(Qg):
57nC@15V
Reverse Recovery Time(trr):
56ns
Switching Energy(Eoff):
430uJ
Turn-On Energy (Eon):
900uJ
Mfr. Part #:
IXYH40N65C3H1-HXY
Package:
TO-247
Product Description
Product Overview
The IXYH40N65C3H1 is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for applications such as UPS, EV-Chargers, and Solar String Inverters.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Model: IXYH40N65C3H1
- Package: TO-247
- Packing: 30PCS
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VCE | Collector emitter voltage | 650 | V | |||
| IC | DC collector current(1) | TC = 25C | 70 | A | ||
| IC | DC collector current(1) | TC = 100C | 40 | A | ||
| ICM | Pulsed collector current | TC = 25C | 160 | A | ||
| IF | Maximum Diode forward current(1) | TC = 25C | 70 | A | ||
| IF | Maximum Diode forward current(1) | TC = 100C | 40 | A | ||
| IFM | Diode pulsed current | TC = 25C | 160 | A | ||
| VGE | Gate-Emitter voltage | TVJ = 25C | 20 | V | ||
| VGE | Transient Gate-Emitter Voltage | (tp 10s, D < 0.010) TVJ = 25C | 30 | V | ||
| Ptot | Power Dissipation | TC = 25C | 250 | W | ||
| Ptot | Power Dissipation | TC = 100C | 125 | W | ||
| TVJ | Operating Junction Temperature Range | -40 | +175 | C | ||
| TSTG | Storage Temperature Range | -55 | +150 | C | ||
| Features | ||||||
| 650V, 40 A IGBT | ||||||
| Easy paralleling capability due to positive temperature coefficient in V CESAT | ||||||
| Low EMI | ||||||
| Low Gate Charge | ||||||
| Low Saturation Voltage V CE(SAT) | ||||||
| Maximum junction temperature T VJmax=175C | ||||||
| Application | ||||||
| UPS | ||||||
| EV-Charger | ||||||
| Solar String Inverter | ||||||
| Energy Storage Inverter | ||||||
| Device | ||||||
| VCE | IC (TC = 25 C) | VCE(SAT) (TVJ = 25 C, VGE = 15 V) | Package | Packing | Part Number | |
| 650V | 40 A | 1.6 V | TO-247 | 30PCS | IXYH40N65C3H1 | |
| Thermal Resistance | ||||||
| RJA | Thermal resistance: junction - ambient | 40 | C/W | |||
| RJC | Thermal resistance: junction - case IGBT | 0.6 | C/W | |||
| RJC | Thermal resistance: junction - case Diode | 0.65 | C/W | |||
| Electrical Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 650 | - | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A | 1.6 | 2.1 | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A ,TVJ = 125C | 1.85 | - | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A ,TVJ = 175C | 1.95 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC =40A | 1.8 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC =40A ,TVJ = 125C | 1.5 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 40A ,TVJ = 175C | 1.35 | - | V | |
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 3.2 | 4 | 4.8 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | - | 40 | mA | |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | - | 100 | nA | |
| gfs | Transconductance | VGE =15V, IC = 40A | 55 | - | S | |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | 1520 | - | pF | |
| Coes | Output Capacitance | 110 | - | pF | ||
| Cres | Reverse Transfer Capacitance | 11 | - | pF | ||
| Qg | Gate Charge | VGE = 0 to 15V VCE = 520V, IC = 40A | 57 | - | nC | |
| Qge | Gate to Emitter charge | 6.5 | - | nC | ||
| Qgc | Gate to Collector charge | 17.5 | - | nC | ||
| Switching Characteristics | ||||||
| td(on) | Turn-On DelayTime | VGE = 15V, VCC = 400V IC= 40A, RG(on) =15,RG(off) =15 | 26 | - | ns | |
| tr | Turn-On Rise Time | 28 | - | ns | ||
| td(off) | Turn-Off DelayTime | 136 | - | ns | ||
| tf | Turn-Off Fall Time | 34 | - | ns | ||
| Eon | Turn-on energy | 0.9 | - | mJ | ||
| Eoff | Turn-off energy | 0.43 | - | mJ | ||
| Ets | Total switching energy | 1.33 | - | mJ | ||
| Diode Recovery Characteristics | ||||||
| Trr | Reverse recovery time | VR = 400 V, IF = 40 A, di/dt = 400 A/S | 56 | - | ns | |
| Qrr | Reverse recovery charge | 0.27 | - | mC | ||
| Irrm | Peak reverse recovery current | 8.0 | - | A | ||
2509181737_HXY-MOSFET-IXYH40N65C3H1-HXY_C49003390.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
