Power Device HXY MOSFET IXYH75N65C3H1-HXY IGBT with Trench Field Stop Technology and RoHS Compliance
Key Attributes
Model Number:
IXYH75N65C3H1-HXY
Product Custom Attributes
Pd - Power Dissipation:
250W
Td(off):
124ns
Td(on):
24ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
93pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
183nC@15V
Reverse Recovery Time(trr):
136ns
Switching Energy(Eoff):
1.2mJ
Turn-On Energy (Eon):
1.4mJ
Input Capacitance(Cies):
3.356nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
179pF
Mfr. Part #:
IXYH75N65C3H1-HXY
Package:
TO-247
Product Description
Product Description
The IXYH75N65C3H1 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as UPS, motor drives, boost converters, and portable power stations. The device offers a positive temperature coefficient, fast switching speeds, low VCE(sat), and is reliable and rugged. Halogen-free and green device options are available, complying with RoHS standards.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: IXYH75N65C3H1
- Package Type: TO-247
- Unit Quantity: 30 (Tube)
- Certifications: Halogen Free, Green Devices Available, RoHS Compliant
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 650 | V | Collector-Emitter Voltage |
| IC @ TC=25C | 100 | A | Collector Current |
| IC @ TC=100C | 60 | A | Collector Current |
| ICM | 200 | A | Pulsed Collector Current, tp limited by TJmax |
| IF @ TC=25C | 100 | A | Diode Continuous Forward Current |
| IF @ TC=100C | 60 | A | Diode Continuous Forward Current |
| IFM | 200 | A | Diode Maximum Forward Current, limited by TJmax |
| VGES | 30 | V | Gate-Emitter Voltage |
| tSC | 8 | s | Short circuit withstand time (VGE=15V, VCC400V, allowed number of short circuits<1000, times between short circuits1.0s, TJ175C) |
| PD @ TC=25C | 250 | W | Power Dissipation |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| TL | 260 | Maximum Temperature for Soldering | |
| RJC (IGBT) | 0.60 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.55 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| VCE(sat) Typ @ IC=60A, VGE=15V, TJ=25 | 1.65 | V | Collector-Emitter Saturation Voltage |
| VGE(TH) Typ @ VCE=VGE, IC=1mA | 5.3 | V | Gate Threshold Voltage |
| VF Typ @ IF=50A, TJ=25 | 1.65 | V | Diode Forward Voltage |
| ICES Max @ VCE=650V, VGE=0V | 10 | A | Collector-Emitter Leakage Current |
| IGES(F) Max @ VGE=+20V | 200 | nA | Gate-Emitter Forward Leakage Current |
| IGES(R) Max @ VGE=-20V | -200 | nA | Gate-Emitter Reverse Leakage Current |
| Cies Typ @ VGE=0V, VCE=25V, f=1.0MHz | 3356 | pF | Input Capacitance |
| Coes Typ @ VGE=0V, VCE=25V, f=1.0MHz | 179 | pF | Output Capacitance |
| Cres Typ @ VGE=0V, VCE=25V, f=1.0MHz | 93 | pF | Reverse Transfer Capacitance |
| Qg Typ @ VCC=520V, ICE=60A, VGE=15V | 183 | nC | Gate charge |
| Qge Typ @ VCC=520V, ICE=60A, VGE=15V | 26 | nC | Gate-emitter charge |
| Qgc Typ @ VCC=520V, ICE=60A, VGE=15V | 83 | nC | Gate-collector charge |
| td(on) Typ @ IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 24 | ns | Turn-on Delay Time |
| tr Typ @ IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 88 | ns | Rise Time |
| td(off) Typ @ IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 124 | ns | Turn-Off Delay Time |
| tf Typ @ IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 73 | ns | Fall Time |
| Eon Typ @ IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 1.40 | mJ | Turn-On Switching Loss |
| Eoff Typ @ IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 1.20 | mJ | Turn-Off Switching Loss |
| Ets Typ @ IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 2.60 | mJ | Total Switching Loss |
| Trr Typ @ IF=60A, VCC=400V, di/dt=200A/s, TJ=25 | 136 | ns | Diode Reverse Recovery Time |
| Qrr Typ @ IF=60A, VCC=400V, di/dt=200A/s, TJ=25 | 350 | nC | Diode Reverse Recovery Charge |
| Irrm Typ @ IF=60A, VCC=400V, di/dt=200A/s, TJ=25 | 6.9 | A | Diode Reverse Recovery Current |
2509181737_HXY-MOSFET-IXYH75N65C3H1-HXY_C49003392.pdf
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