IGBT power device HXY MOSFET AOK50B65M2 with RoHS compliance halogen free and green device options
Key Attributes
Model Number:
AOK50B65M2
Product Custom Attributes
Td(off):
122ns
Pd - Power Dissipation:
300W
Td(on):
24ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
92pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@1mA
Gate Charge(Qg):
179nC@15V
Reverse Recovery Time(trr):
98ns
Switching Energy(Eoff):
1.14mJ
Turn-On Energy (Eon):
1.38mJ
Input Capacitance(Cies):
3.363nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
206pF
Mfr. Part #:
AOK50B65M2
Package:
TO-247
Product Description
Product Overview
The AOK50B65M2 is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design minimizes conduction losses, enhances switching performance, and increases avalanche energy. It is designed for applications requiring high efficiency and reliability, featuring a positive temperature coefficient, fast switching speeds, and low VCE(sat). The device is available in RoHS compliant, Halogen Free, and Green options.
Product Attributes
- Brand: HUAXUANYANG
- Model: AOK50B65M2
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Website: www.hxymos.com
- Certifications: RoHS Compliant, Halogen Free, Green Devices Available
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 650 | V | Collector-Emitter Voltage |
| IC (@TC=25C) | 100 | A | Collector Current |
| IC (@TC=100C) | 50 | A | Collector Current |
| ICM | 200 | A | Pulsed Collector Current, tp limited by TJmax |
| IF (@TC=25C) | 100 | A | Diode Continuous Forward Current |
| IF (@TC=100C) | 50 | A | Diode Continuous Forward Current |
| IFM | 200 | A | Diode Maximum Forward Current, limited by TJmax |
| VGES | ±30 | V | Gate-Emitter Voltage |
| tSC | 4 | µs | Short circuit withstand time (VGE=15V, VCC≤400V, <1000 short circuits, ≥1.0s between shorts, TJ≤175°C) |
| PD (@TC=25C) | 300 | W | Power Dissipation |
| TJmax, Tstg | -55 to 175 | °C | Operating Junction and Storage Temperature Range |
| TL | 260 | °C | Maximum Temperature for Soldering |
| RθJC (IGBT) | 0.50 | °C/W | Junction-to-Case (IGBT) |
| RθJC (Diode) | 0.65 | °C/W | Junction-to-Case (Diode) |
| RθJA | 40 | °C/W | Junction-to-Ambient |
| VCE(sat).typ (@IC=50A, VGE=15V, TJ=25°C) | 1.65 | V | Collector-Emitter Saturation Voltage (Typical) |
| VGE(TH) (@IC=1mA, VCE=VGE) | 5.3 | V | Gate Threshold Voltage (Typical) |
| VF (@IF=50A, TJ=25°C) | 1.45 | V | Diode Forward Voltage (Typical) |
| ICES (@VCE=650V, VGE=0V) | 10 | µA | Collector-Emitter Leakage Current (Max) |
| IGES(F) (@VGE=+20V) | 100 | nA | Gate-Emitter Forward Leakage Current (Max) |
| IGES(R) (@VGE=-20V) | -100 | nA | Gate-Emitter Reverse Leakage Current (Max) |
| Cies (@VGE=0V, VCE=25V, f=1.0MHz) | 3363 | pF | Input Capacitance (Typical) |
| Coes (@VGE=0V, VCE=25V, f=1.0MHz) | 206 | pF | Output Capacitance (Typical) |
| Cres (@VGE=0V, VCE=25V, f=1.0MHz) | 92 | pF | Reverse Transfer Capacitance (Typical) |
| Qg (@VCC=520V, ICE=50A, VGE=15V) | 179 | nC | Gate charge (Typical) |
| IC(SC) (VGE=15V, VCC≤400V, tSC≤4µs, TJ≤175°C) | 469 | A | Short circuit collector current (Max) |
| td(on) (@IC=50A, VCC=400V, VGE=15V, Rg=5Ω, Inductive Load, TJ=25°C) | 24 | ns | Turn-on Delay Time (Typical) |
| tr (@IC=50A, VCC=400V, VGE=15V, Rg=5Ω, Inductive Load, TJ=25°C) | 86 | ns | Rise Time (Typical) |
| td(off) (@IC=50A, VCC=400V, VGE=15V, Rg=5Ω, Inductive Load, TJ=25°C) | 122 | ns | Turn-Off Delay Time (Typical) |
| tf (@IC=50A, VCC=400V, VGE=15V, Rg=5Ω, Inductive Load, TJ=25°C) | 74 | ns | Fall Time (Typical) |
| Eon (@IC=50A, VCC=400V, VGE=15V, Rg=5Ω, Inductive Load, TJ=25°C) | 1.38 | mJ | Turn-On Switching Loss (Typical) |
| Eoff (@IC=50A, VCC=400V, VGE=15V, Rg=5Ω, Inductive Load, TJ=25°C) | 1.14 | mJ | Turn-Off Switching Loss (Typical) |
| Ets (@IC=50A, VCC=400V, VGE=15V, Rg=5Ω, Inductive Load, TJ=25°C) | 2.52 | mJ | Total Switching Loss (Typical) |
| Trr (@IF=50A, VCC=400V, di/dt=200A/µs, TJ=25°C) | 98 | ns | Reverse Recovery Time (Typical) |
| Qrr (@IF=50A, VCC=400V, di/dt=200A/µs, TJ=25°C) | 1580 | µC | Reverse Recovery Charge (Typical) |
| Irrm (@IF=50A, VCC=400V, di/dt=200A/µs, TJ=25°C) | 26 | A | Reverse Recovery Current (Typical) |
Applications
- UPS
- Motor drives
- Boost
- Portable power station
Package Information
| Symbol | Unit | MIN | NOM | MAX |
| A | mm | 4.80 | 5.00 | 5.20 |
| A1 | mm | 2.21 | 2.41 | 2.59 |
| A2 | mm | 1.85 | 2.00 | 2.15 |
| b | mm | 1.11 | 1.21 | 1.36 |
| b2 | mm | 1.91 | 2.01 | 2.21 |
| b4 | mm | 2.91 | 3.01 | 3.21 |
| c | mm | 0.51 | 0.61 | 0.75 |
| D | mm | 20.70 | 21.00 | 21.30 |
| D1 | mm | 16.25 | 16.55 | 16.85 |
| E | mm | 15.50 | 15.80 | 16.10 |
| E1 | mm | 13.00 | 13.30 | 13.60 |
| E2 | mm | 4.80 | 5.00 | 5.20 |
| E3 | mm | 2.30 | 2.50 | 2.70 |
| e | BSC | 5.44 | ||
| L | mm | 19.62 | 19.92 | 20.22 |
| L1 | mm | 4.30 | ||
| ΦP | mm | 3.40 | 3.60 | 3.80 |
| ΦP1 | mm | 7.30 | ||
| S | BSC | 6.15 | ||
2509181602_HXY-MOSFET-AOK50B65M2_C49003325.pdf
Related Products
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
