Durable HXY MOSFET BT134-800E triac featuring glass passivated technology and 800 volt repetitive peak voltage rating
Key Attributes
Model Number:
BT134-800E
Product Custom Attributes
Holding Current (Ih):
30mA
Current - Gate Trigger(Igt):
10mA
Voltage - On State(Vtm):
1.65V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
4A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
20A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
2V
Mfr. Part #:
BT134-800E
Package:
TO-126
Product Description
Product Overview
The BT134-800E is a glass-passivated triac in a plastic encapsulation, designed for applications requiring high bidirectional transient and blocking voltage capability and excellent thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating, and static switching.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Origin: Shenzhen, China
- Package: TO-126
- Material: Plastic Encapsulate
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| VDRM /VRRM | repetitive peak off-state voltage | (Ta=25C unless otherwise noted) | 800 | V | ||
| IGM | Peak Gate Current | 1 | A | |||
| VGM | Peak gate voltage | 5 | V | |||
| PGM | Peak gate power | 0.5 | W | |||
| Tj | Junction Temperature | -40 | 125 | C | ||
| G(AV) | Average Gate Power Dissipation | |||||
| IT(RMS) | RMS on-state current | 4 | A | |||
| ITSM | Non repetitive surge peak on-state current | t = 2ms T j =25 C | 20 | A | ||
| I t | I t for fusing | t = 16.7ms T j =25 C | 16 | A | ||
| I t | I t for fusing | t = 10 ms | 2 | A s | ||
| dl/dt | Critical-rate of rise of commutation current | IG=2IGT tr100ns F=120Hz | 50 | A/us | ||
| Tstg | Storage Temperature | -40 | 150 | C | ||
| Electrical Characteristics | ||||||
| IDRM,IRRM | Repetitive Peak Off-State Current / Repetitive Peak Reverse Current | VDRM=VRRM T j =125 C | 0.8 | mA | ||
| VDRM | Repetitive Peak Off-State Voltage | 800 | V | |||
| VGD | Gate non-trigger voltage | VD= 1/2V DRM | 0.2 | V | ||
| VTM | On-state voltage | IT=2A,tp=380us | 1.65 | V | ||
| IGT | Gate trigger current | T2(+), G(+) | 2 | mA | ||
| IGT | Gate trigger current | T2(+), G(-) | 2 | mA | ||
| IGT | Gate trigger current | T2(-), G(-) | 2 | mA | ||
| IGT | Gate trigger current | T2(-), G(+) | 2 | mA | ||
| VGT | Gate trigger voltage | T2(+), G(+) | VD=12V RL=100 | 2.5 | V | |
| VGT | Gate trigger voltage | T2(+), G(-) | VD=12V RL=100 | 2.5 | V | |
| VGT | Gate trigger voltage | T2(-), G(-) | VD=12V RL=100 | 2.5 | V | |
| VGT | Gate trigger voltage | T2(-), G(+) | VD=12V RL=100 | 2.5 | V | |
| IH | Holding current | VD=12V,IGT=100mA | 30 | mA | ||
| dV/dt | Critical-rate of rise of commutation voltage | VDRM= 5 V/us | 20 | V/us | ||
| t gt | Turn-on time | ITM =16A ,VDM=V DRM VDM=67%V DRM(MA X) | 2 | us | ||
| (dl/dt)c | Critical-rate of rise of commutation current | Tj =125C | 5.4 | A/ms | ||
| dV/dt | Rate of change of commutating voltage | Tj =125C | 10 | V/us | ||
| dV/dt | Rate of change of commutating voltage | Tj =125C | 0.6 | V/us | ||
| dV/dt | Rate of change of commutating voltage | Tj =125C | 10 | V/us | ||
| Package Outline Dimensions | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||||
| A1 | 2.500 | 0.098 | ||||
| A1 | 2.900 | 0.114 | ||||
| b | 1.100 | 0.043 | ||||
| b | 1.500 | 0.059 | ||||
| b1 | 0.660 | 0.026 | ||||
| b1 | 0.860 | 0.034 | ||||
| c | 1.170 | 0.046 | ||||
| c | 1.370 | 0.054 | ||||
| D | 0.450 | 0.018 | ||||
| D | 0.600 | 0.024 | ||||
| E | 7.400 | 0.291 | ||||
| E | 7.800 | 0.307 | ||||
| e | 10.600 | 0.417 | ||||
| e | 11.000 | 0.433 | ||||
| e1 | 4.480 | 0.176 | ||||
| e1 | 4.680 | 0.184 | ||||
| h | 0.000 | 0.000 | ||||
| h | 0.300 | 0.012 | ||||
| L | 15.300 | 0.602 | ||||
| L | 15.700 | 0.618 | ||||
| L1 | 2.100 | 0.083 | ||||
| L1 | 2.300 | 0.091 | ||||
| P | 3.900 | 0.154 | ||||
| P | 4.100 | 0.161 | ||||
| 3.000 | 0.118 | |||||
| 3.200 | 0.126 | |||||
2508201703_HXY-MOSFET-BT134-800E_C50313826.pdf
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