Jilin Sino Microelectronics 3DD13005ED 220C power transistor with high reliability and RoHS compliance
Key Attributes
Model Number:
3DD13005ED-220C
Product Custom Attributes
Pd - Power Dissipation:
75W
Transition Frequency(fT):
4MHz
Type:
NPN
Current - Collector(Ic):
4A
Collector - Emitter Voltage VCEO:
400V
Mfr. Part #:
3DD13005ED-220C
Package:
TO-220
Product Description
Product Overview
The 3DD13005ED is a high voltage, fast-switching NPN power transistor designed for various power electronics applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Collector-Emitter Voltage (VBE=0) | VCES | 800 | V | |
| Collector-Emitter Voltage (IB=0) | VCEO | 400 | V | |
| Emitter-Base Voltage | VEBO | 9 | V | |
| Collector Current (DC) | IC | 4 | A | |
| Collector Current (pulse) | ICP | 8 | A | |
| Base Current (DC) | IB | 2 | A | |
| Base Current (pulse) | IBP | 4 | A | |
| Total Dissipation (IPAK/126/126S/220HF) | PC | 40 | W | |
| Total Dissipation (DPAK/TO-252) | PC | 50 | W | |
| Total Dissipation (TO-220C/262/263) | PC | 75 | W | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -55~+150 | ||
| Breakdown Voltage Collector-Emitter (IC=10mA,IB=0) | V(BR)CEO | 400 | V | |
| Breakdown Voltage Collector-Base (IC=1mA,IE=0) | V(BR)CBO | 800 | V | |
| Breakdown Voltage Emitter-Base (IE=1mA,IC=0) | V(BR)EBO | 9 | V | |
| Collector Cutoff Current (VCB=700V, IE=0) | ICBO | 100 | A | |
| Collector Cutoff Current (VCE=400V,IB=0) | ICEO | 50 | A | |
| Emitter Cutoff Current (VEB=9V, IC=0) | IEBO | 10 | A | |
| DC Current Gain (VCE =10V, IC=500mA) | Hfe(1) | 20-30 | ||
| DC Current Gain (VCE =5V, IC=2A) | Hfe(2) | 5 | ||
| Collector-Emitter Saturation Voltage (IC=2A, IB=0.4A) | VCE(sat) | 1.0 | V | |
| Base-Emitter Saturation Voltage (IC=2A, IB=0.5A) | VBE(sat) | 1.8 | V | |
| Fall Time (VCC=24V IC=2A,IB1=-IB2=0.4A) | tf | 0.7 | S | |
| Storage Time | ts | 5 | S | |
| Transition Frequency (VCE=10V, IC=0.5A) | fT | 4 | MHz | |
| Thermal Resistance Junction-Case (IPAK/126/126S/220HF) | Rth(j-c) | 3.125 | /W | |
| Thermal Resistance Junction-Case (DPAK/TO-252) | Rth(j-c) | 2.50 | /W | |
| Thermal Resistance Junction-Case (TO-220C/262/263) | Rth(j-c) | 1.67 | /W |
2409272332_Jilin-Sino-Microelectronics-3DD13005ED-220C_C272475.pdf
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