Insulated Gate Bipolar Transistor HXY MOSFET DGTD65T50S1PT-HXY with Halogen Free and RoHS Compliance
Key Attributes
Model Number:
DGTD65T50S1PT-HXY
Product Custom Attributes
Td(off):
122ns
Pd - Power Dissipation:
300W
Td(on):
24ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
92pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@1mA
Gate Charge(Qg):
179nC@15V
Reverse Recovery Time(trr):
98ns
Switching Energy(Eoff):
1.14mJ
Turn-On Energy (Eon):
1.38mJ
Input Capacitance(Cies):
3.363nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
206pF
Mfr. Part #:
DGTD65T50S1PT-HXY
Package:
TO-247
Product Description
Insulated Gate Bipolar Transistor DGTD65T50S1PT
The DGTD65T50S1PT is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as UPS, motor drives, boost converters, and portable power stations. The device features a positive temperature coefficient, fast switching, low VCE(sat), and is reliable and rugged. Halogen-free and green (RoHS Compliant) options are available.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: DGTD65T50S1PT
- Package Type: TO-247
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Certifications: RoHS Compliant, Halogen Free and Green Devices Available
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 650 | V | Collector-Emitter Voltage |
| IC | 50 | A | Collector Current @TC=100C |
| IC (25C) | 100 | A | Collector Current @TC=25C |
| ICM | 200 | A | Pulsed Collector Current, tp limited by TJmax |
| VCE(sat).typ | 1.65 | V | Collector-Emitter Saturation Voltage Typical |
| PD (25C) | 300 | W | Power Dissipation @TC=25C |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.50 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.65 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| VGE(TH) | 4.5 - 6.5 | V | Gate Threshold Voltage (Min - Max) |
| ICES | 10 | A | Collector-Emitter Leakage Current @VCE=650V, VGE=0V |
| Cies | 3363 | pF | Input Capacitance @VGE=0V, VCE=25V, f=1.0MHz |
| Coes | 206 | pF | Output Capacitance |
| Cres | 92 | pF | Reverse Transfer Capacitance |
| Qg | 179 | nC | Gate charge |
| td(on) (TJ=25C) | 24 | ns | Turn-on Delay Time |
| tr (TJ=25C) | 86 | ns | Rise Time |
| td(off) (TJ=25C) | 122 | ns | Turn-Off Delay Time |
| tf (TJ=25C) | 74 | ns | Fall Time |
| Eon (TJ=25C) | 1.38 | mJ | Turn-On Switching Loss |
| Eoff (TJ=25C) | 1.14 | mJ | Turn-Off Switching Loss |
| Ets (TJ=25C) | 2.52 | mJ | Total Switching Loss |
| Trr (TJ=25C) | 98 | ns | Reverse Recovery Time |
| Qrr (TJ=25C) | 1580 | C | Reverse Recovery Charge |
| Irrm (TJ=25C) | 26 | A | Reverse Recovery Current |
2509181737_HXY-MOSFET-DGTD65T50S1PT-HXY_C49003401.pdf
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