Plastic encapsulated triac HXY MOSFET BT138-800E for motor control lighting and heating applications
Key Attributes
Model Number:
BT138-800E
Product Custom Attributes
Mfr. Part #:
BT138-800E
Package:
TO-252-2L
Product Description
Product Overview
The BT138-800E is a glass-passivated triac in a plastic envelope, designed for applications requiring high bidirectional transient and blocking voltage capability, along with excellent thermal cycling performance. Its typical applications include motor control, industrial and domestic lighting, heating, and static switching.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS (HXY)
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Material: Plastic-Encapsulate Thyristors
- Package: TO-252-2L
Technical Specifications
| Symbol | Parameter | Unit | Conditions | Min | Typ | Max |
| Maximum Ratings (Ta=25C unless otherwise noted) | ||||||
| VDRM /VRRM | repetitive peak off-state voltage | V | - | - | - | 800 |
| IGM | Peak Gate Current | A | - | - | - | 5 |
| VGM | Peak gate voltage | V | - | - | - | 5 |
| PGM | Peak gate power | W | - | - | - | 5 |
| Tj | Junction Temperature | C | -40 ~ 125 | - | - | 125 |
| G(AV) | Average Gate Power Dissipation | W | - | - | 0.5 | - |
| IT(RMS) | RMS on-state current | A | T =125 j C | - | - | 2 |
| ITSM | Non repetitive surge peak on-state current | A | t =20ms Tj =25C | - | - | 2500 |
| I t | I t for fusing | A s | t =16.7ms Tj =25C | - | - | 30 |
| dl/dt | Critical-rate of rise of commutation current | A/us | IG=2IGT tr100ns F=120Hz | - | - | 10 |
| dV/dt | Critical-rate of rise of commutation voltage | V/us | Tj =125C | - | - | 50 |
| Tstg | Storage Temperature | C | -40 ~ 150 | - | - | 150 |
| Electrical Characteristics (Ta=25C unless otherwise specified) | ||||||
| IDRM,IRRM | Repetitive Peak Off-State Current Repetitive Peak Reverse Current | mA | VDRM=VRRM T =25 j C | - | - | 0.8 |
| IDRM,IRRM | Repetitive Peak Off-State Current Repetitive Peak Reverse Current | mA | VDRM=VRRM T =125 j C | - | - | 0.8 |
| VGD | Gate non-trigger voltage | V | VD= 1/2V DRM | - | - | 0.2 |
| VTM | On-state voltage | V | IT= 6A,tp=380us | - | - | 1.65 |
| IGT | Gate trigger current | mA | IT2(+), G(+) VD=12V RL=100 | - | - | 50 |
| IGT | Gate trigger current | mA | IT2(+), G(-) VD=12V RL=100 | - | - | 50 |
| IGT | Gate trigger current | mA | IT2(-), G(-) VD=12V RL=100 | - | - | 50 |
| IGT | Gate trigger current | mA | IT2(-), G(+) VD=12V RL=100 | - | - | 50 |
| VGT | Gate trigger voltage | V | IT2(+), G(+) VD=12V RL=100 | - | - | 0.8 |
| VGT | Gate trigger voltage | V | IT2(+), G(-) VD=12V RL=100 | - | - | 0.8 |
| VGT | Gate trigger voltage | V | IT2(-), G(-) VD=12V RL=100 | - | - | 0.8 |
| VGT | Gate trigger voltage | V | IT2(-), G(+) VD=12V RL=100 | - | - | 0.8 |
| IH | Holding current | mA | VD=12V ,IGT=100mA | - | - | 30 |
| t gt | Turn-on time | us | ITM =16A ,VDM=V DRM VDM=67%V DM T =125 j C | - | - | 4 |
| (dl/dt)c | Critical-rate of rise of commutation current | A/uS | IG =0.1A,dl /dt=5A/uS | - | - | 10 |
| dV/dt | Rate of change of commutating voltage | V/us | Tj =125 j C | - | - | 20 |
2508121550_HXY-MOSFET-BT138-800E_C50275362.pdf
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