1200V 40A HXY MOSFET IKW40N120H3-HXY IGBT featuring fast switching low VCEsat ideal for PTC and motor drive applications
Key Attributes
Model Number:
IKW40N120H3-HXY
Product Custom Attributes
Pd - Power Dissipation:
441W
Td(off):
262ns
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
93pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
346nC@15V
Reverse Recovery Time(trr):
94ns
Switching Energy(Eoff):
2.3mJ
Turn-On Energy (Eon):
1.3mJ
Input Capacitance(Cies):
3.98nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
157pF
Mfr. Part #:
IKW40N120H3-HXY
Package:
TO-247
Product Description
Product Overview
The IKW40N120H3 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as PTC, motor drives, and onboard chargers (OBC). The device offers a positive temperature coefficient, fast switching, low VCE(sat), and is reliable and rugged, meeting AEC-Q101 qualification standards. It operates at temperatures up to 175C and is available in Halogen Free and Green (RoHS Compliant) versions.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Certifications: AEC-Q101 Qualified, RoHS Compliant
- Package Type: TO-247
- Device Per Unit Quantity: 30 (Tube)
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC | 40 | A | Collector Current @TC=100C |
| IC (25C) | 80 | A | Collector Current @TC=25C |
| VCE(sat).typ | 1.70 | V | Collector-Emitter Saturation Voltage Typical |
| PD (@TC=25C) | 441 | W | Power Dissipation @TC=25C |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case Thermal Resistance (IGBT) |
| RJA | 40 | /W | Junction-to-Ambient Thermal Resistance |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage |
| VF (IF=40A, TJ=25C) | 1.85 | V | Diode Forward Voltage |
| ICES (VCE=1200V, VGE=0V) | 10 | A | Collector-Emitter Leakage Current |
| Cies | 3980 | pF | Input Capacitance |
| Qg | 346 | nC | Gate Charge |
| td(on) (TJ=25C) | 25 | ns | Turn-on Delay Time |
| tr (TJ=25C) | 28 | ns | Rise Time |
| td(off) (TJ=25C) | 262 | ns | Turn-Off Delay Time |
| tf (TJ=25C) | 149 | ns | Fall Time |
| Eon (TJ=25C) | 1.30 | mJ | Turn-On Switching Loss |
| Eoff (TJ=25C) | 2.30 | mJ | Turn-Off Switching Loss |
| Trr (TJ=25C) | 94 | ns | Reverse Recovery Time |
| Qrr (TJ=25C) | 225 | nC | Reverse Recovery Charge |
| Irrm (TJ=25C) | 9.7 | A | Reverse Recovery Current |
2509181737_HXY-MOSFET-IKW40N120H3-HXY_C49003403.pdf
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