High Voltage Collector Emitter HXY MOSFET IKW40N120CS6-HXY IGBT with Halogen Free and Green Versions
Key Attributes
Model Number:
IKW40N120CS6-HXY
Product Custom Attributes
Pd - Power Dissipation:
441W
Td(off):
262ns
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
93pF
Input Capacitance(Cies):
3.98nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
346nC@15V
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
157pF
Reverse Recovery Time(trr):
94ns
Turn-On Energy (Eon):
1.3mJ
Mfr. Part #:
IKW40N120CS6-HXY
Package:
TO-247
Product Description
Product Overview
The IKW40N120CS6 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficient power handling. The device features a positive temperature coefficient, fast switching speeds, low VCE(sat), and is AEC-Q101 qualified for automotive applications. It operates at temperatures up to 175 and is available in halogen-free and green versions (RoHS Compliant).
Product Attributes
- Brand: HUAXUANYANG
- Model: IKW40N120CS6
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package Type: TO-247
- Certifications: AEC-Q101 Qualified, RoHS Compliant
- Availability: Halogen Free and Green Devices Available
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC (@TC=25C) | 80 | A | Collector Current |
| IC (@TC=100C) | 40 | A | Collector Current |
| ICM | 160 | A | Pulsed Collector Current, tp limited by TJmax |
| VCE(sat).typ (@IC=40A, TJ=25) | 1.70 | V | Collector-Emitter Saturation Voltage |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage |
| PD (@TC=25C) | 441 | W | Power Dissipation |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case |
| RJC (Diode) | 0.80 | /W | Junction-to-Case |
| RJA | 40 | /W | Junction-to-Ambient |
| Cies | 3980 | pF | Input Capacitance |
| Coes | 157 | pF | Output Capacitance |
| Cres | 93 | pF | Reverse Transfer Capacitance |
| Qg (@VCC=960V, ICE=40A, VGE=15V) | 346 | nC | Gate charge |
| Eon (@TJ=25, IC=40A, VCC=600V, VGE=15V, Rg=5) | 1.30 | mJ | Turn-On Switching Loss |
| Eoff (@TJ=25, IC=40A, VCC=600V, VGE=15V, Rg=5) | 2.30 | mJ | Turn-Off Switching Loss |
| Ets (@TJ=25, IC=40A, VCC=600V, VGE=15V, Rg=5) | 3.60 | mJ | Total Switching Loss |
| Trr (@TJ=25, IF=40A, VCC=600V, di/dt=200A/s) | 94 | ns | Reverse Recovery Time |
| Qrr (@TJ=25, IF=40A, VCC=600V, di/dt=200A/s) | 225 | nC | Reverse Recovery Charge |
| Irrm (@TJ=25, IF=40A, VCC=600V, di/dt=200A/s) | 9.7 | A | Reverse Recovery Current |
| Package Quantity (Tube) | 30 | Device Per Unit | TO-247 |
2509181737_HXY-MOSFET-IKW40N120CS6-HXY_C49003307.pdf
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