Glass Passivated Triac HXY MOSFET BT134-600E Plastic Package Suitable for High Voltage Motor Control
Key Attributes
Model Number:
BT134-600E
Product Custom Attributes
Holding Current (Ih):
30mA
Current - Gate Trigger(Igt):
10mA
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
4A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
20A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
2V
Mfr. Part #:
BT134-600E
Package:
TO-126
Product Description
Product Overview
The BT134-600E is a glass-passivated triac in a plastic package, designed for applications requiring high bidirectional transient and blocking voltage capability and excellent thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating, and static switching.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Origin: Shenzhen
- Package: TO-126
- Material: Plastic-Encapsulate
Technical Specifications
| Symbol | Parameter | Conditions | Value | Unit | ||
| Maximum Ratings | ||||||
| VDRM /VRRM | repetitive peak off-state voltage | (Ta=25C unless otherwise noted) | 600 | V | ||
| IGM | Peak Gate Current | - | A | |||
| VGM | Peak gate voltage | - | V | |||
| PGM | Peak gate power | 0.5 | W | |||
| G(AV) | Average Gate Power Dissipation | - | W | |||
| Tj | Junction Temperature | -40 ~ 125 | C | |||
| IT(RMS) | RMS on-state current | - | A | |||
| Tj | Junction Temperature | t = 2ms T =25 j C | 20 | A | ||
| TSM | Non repetitive surge peak on-state current | t =16.7ms T =25 j C | 16 | A | ||
| I t | I t for fusing | t = 10 ms | 2 | A s | ||
| dl/dt | Critical-rate of rise of commutation current | IG=2IGT tr100ns F=120Hz | 50 | A/us | ||
| V | Tj =125 C | 0.6 | V | |||
| W | Tj =125 C | 10 | 2 | |||
| Tstg | Storage Temperature | -40 ~ 150 | C | |||
| Electrical Characteristics | ||||||
| Symbol | Parameter | Test conditions | Min | Max | Unit | |
| IDRM,IRRM | Repetitive Peak Off-State Current Repetitive Peak Reverse Current | VDRM=VRRM T =25 j C unless otherwise specified VDRM=VRRM T =125 j C | 0.8 0.8 | mA mA | ||
| VGD | Gate non-trigger voltage | VD= 1/2V DRM | 5 | V | ||
| VTM | On-state voltage | IT=2A,tp=380us | 1.65 | V | ||
| I GT | Gate trigger current | T2(+), G(+) II T2(+), G(-) III T2(-), G(-) IV T2(-), G(+) VD=12V RL=100 | 10 | mA | ||
| V GT | Gate trigger voltage | T2(+), G(+) II T2(+), G(-) III T2(-), G(-) IV T2(-), G(+) VD=12V RL=100 | 2.5 | V | ||
| IH | Holding current | VD=12V,IGT=100mA | 30 | mA | ||
| dV/dt | Rate of change of commutating voltage | VDRM= 5 V/us | 20 | V/us | ||
| t gt | Turn-on time | ITM =16A ,VDM=V DRM VDM=67%V DRM T =125 j C | 2 | us | ||
| (dl/dt)c | Critical-rate of rise of commutation voltage | (dl/dt)c=5.4A/ms Gate open T =125 j C | 5.4 | A/ms | ||
| X | VDM=400V T =125 j C IG =0.1A,dlG/dt=5A/uS | us | ||||
| Package Outline Dimensions | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||||
| Min | Max | Typ | Min | Max | Typ | |
| A1 | 1.100 | 1.500 | 0.043 | 0.059 | ||
| b | 0.660 | 0.860 | 0.026 | 0.034 | ||
| b1 | 1.170 | 1.370 | 0.046 | 0.054 | ||
| c | 0.450 | 0.600 | 0.018 | 0.024 | ||
| D | 7.400 | 7.800 | 0.291 | 0.307 | ||
| E | 10.600 | 11.000 | 0.417 | 0.433 | ||
| e | 4.480 | 4.680 | 0.176 | 0.184 | ||
| e1 | ||||||
| h | 0.000 | 0.300 | 0.000 | 0.012 | ||
| L | 15.300 | 15.700 | 0.602 | 0.618 | ||
| L1 | 2.100 | 2.300 | 0.083 | 0.091 | ||
| P | 3.900 | 4.100 | 0.154 | 0.161 | ||
| 3.000 | 3.200 | 0.118 | 0.126 | |||
| 2.290 TYP | 0.090 TYP | |||||
2508201703_HXY-MOSFET-BT134-600E_C50313590.pdf
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