Pb free RoHS compliant Infineon BFR106E6327 transistor in SOT23 package for RF and VHF applications
Key Attributes
Model Number:
BFR106E6327
Product Custom Attributes
Emitter-Base Voltage(Vebo):
3V
Current - Collector Cutoff:
30nA
Pd - Power Dissipation:
700mW
Transition Frequency(fT):
3.5GHz
Type:
NPN
Current - Collector(Ic):
210mA
Collector - Emitter Voltage VCEO:
16V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BFR106E6327
Package:
SOT-23
Product Description
Product Overview
The BFR106 is a low-noise silicon bipolar RF transistor designed for UHF/VHF applications. It offers high linearity with 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, making it suitable as a driver for multistage amplifiers and for linear broadband and antenna amplifiers. The collector design supports a 5 V supply voltage, and it comes in a Pb-free (RoHS compliant) SOT23 package. Qualification is available according to AEC-Q101.
Product Attributes
- Brand: Infineon Technologies
- Package: SOT23
- Certifications: Pb-free (RoHS compliant), AEC-Q101 available
- Handling Precaution: ESD sensitive device
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Maximum Ratings | ||||
| Collector-emitter voltage, TA = 25C | VCEO | 16 | V | |
| Collector-emitter voltage | VCES | 20 | V | |
| Collector-base voltage | VCBO | 20 | V | |
| Emitter-base voltage | VEBO | 3 | V | |
| Collector current | IC | 210 | mA | |
| Base current | IB | 21 | mA | |
| Total power dissipation | Ptot | 700 | mW | TS 76 C |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TStg | -55 ... 150 | C | |
| Thermal Resistance | ||||
| Junction - soldering point | RthJS | 105 | K/W | Measured on the collector lead at the soldering point to the pcb |
| DC Characteristics | ||||
| Collector-emitter breakdown voltage | V(BR)CEO | 15 | V | IC = 1 mA, IB = 0 |
| Collector-emitter cutoff current | ICES | 0.001 | A | VCE = 20 V, VBE = 0 |
| Collector-emitter cutoff current | ICES | 1 | A | VCE = 10 V, VBE = 0 |
| Collector-base cutoff current | ICBO | 0.03 | A | VCB = 10 V, IE = 0 |
| Emitter-base cutoff current | IEBO | 1 | A | VEB = 2 V, IC = 0 |
| DC current gain | hFE | 70 | - | IC = 70 mA, VCE = 8 V, pulse measured |
| DC current gain | hFE | 100 | - | IC = 70 mA, VCE = 8 V, pulse measured |
| DC current gain | hFE | 140 | - | IC = 70 mA, VCE = 8 V, pulse measured |
| AC Characteristics | ||||
| Transition frequency | fT | 3.5 | GHz | IC = 70 mA, VCE = 8 V, f = 500 MHz |
| Transition frequency | fT | 5 | GHz | IC = 70 mA, VCE = 8 V, f = 500 MHz |
| Collector-base capacitance | Ccb | 0.85 | pF | VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded |
| Collector-base capacitance | Ccb | 1.2 | pF | VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded |
| Collector emitter capacitance | Cce | 0.27 | pF | VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded |
| Emitter-base capacitance | Ceb | 3.9 | pF | VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded |
| Minimum noise figure | NFmin | 1.8 | dB | IC = 20 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz |
| Minimum noise figure | NFmin | 3 | dB | IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz |
| Power gain, maximum available | Gma | 13 | dB | IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz |
| Power gain, maximum available | Gma | 8.5 | dB | IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz |
| Transducer gain | |S21e| | 10.5 | dB | IC = 70 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz |
| Transducer gain | |S21e| | 5 | dB | IC = 70 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 GHz |
| Third order intercept point at output | IP3 | 31 | dBm | VCE = 8 V, IC = 70 mA, f = 0.9 GHz , ZS=ZL=50 |
| 1dB compression point | P-1dB | 22 | dBm | IC = 70 mA, VCE = 8 V, ZS=ZL=50, f = 0.9 GHz |
2410121813_Infineon-BFR106E6327_C439780.pdf
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