Jilin Sino Microelectronics JCS24N50WH N channel MOSFET for power supply and UPS switching applications
Key Attributes
Model Number:
JCS24N50WH
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
24A
Operating Temperature -:
-55℃~+150℃
RDS(on):
190mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
-
Output Capacitance(Coss):
620pF
Input Capacitance(Ciss):
4.16nF
Pd - Power Dissipation:
271W
Gate Charge(Qg):
100nC@10V
Mfr. Part #:
JCS24N50WH
Package:
TO-247-3
Product Description
JCS24N50H N-CHANNEL MOSFET
The JCS24N50H is an N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and UPS applications. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability. This product is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Order Codes | Marking | Package | ID (A) | VDSS (V) | Rds(on)-max (@Vgs=10V) () | Qg-typ (nC) | Applications |
| JCS24N50WH-GE-B JCS24N50WT-GE-BR | N/A | TO-247 | 24.0* | 500 | 0.19 | 81 | High efficiency switch mode power supplies, based on half bridge, UPS |
| JCS24N50ABH-GD-B JCS24N50ABH-GD-BR | N/A | TO-3PB | 24.0* | 500 | 0.19 | 81 | High efficiency switch mode power supplies, based on half bridge, UPS |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit | Notes |
| Drain-Source Voltage | VDSS | 500 | V | |
| Drain Current -continuous | ID | 24.0* (T=25), 14.0* (T=100) | A | Drain current limited by maximum junction temperature |
| Drain Current -pulse | IDM | 96* | A | Pulse width limited by maximum junction temperature |
| Gate-Source Voltage | VGSS | 30 | V | |
| Single Pulsed Avalanche Energy | EAS | 1760 | mJ | L=5.5mH, IAS=24A, VDD=50V, RG=25 , Starting TJ=25 |
| Avalanche Current | IAR | 24.0 | A | Pulse width limited by maximum junction temperature |
| Repetitive Avalanche Current | EAR | 27.1 | mJ | Pulse width limited by maximum junction temperature |
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | ISD 24A,di/dt 200A/s, VDDBVDSS, Starting TJ=25 |
| Power Dissipation | PD | 271 (TC=25) | W | -Derate above 25: 2.22 W/ |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | ||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 |
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 500 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS /TJ | ID=250A, referenced to 25 | - | 0.5 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=500V, VGS=0V, TC=25 | - | - | 10 | A |
| VDS=400V, TC=125 | - | - | 100 | A | ||
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 3.0 | - | 5.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=12A | - | 0.16 | 0.19 | |
| Forward Transconductance | gfs | VDS = 40V , ID=12Anote 4 | - | 27.5 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 3100 | 4160 | pF |
| Output capacitance | Coss | - | 465 | 620 | pF | |
| Reverse transfer capacitance | Crss | - | 34 | 55 | pF | |
Switching Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Turn-On delay time | td(on) | VDD=250V,ID=24A,RG=25 note 45 | - | 48 | 105 | ns |
| Turn-On rise time | tr | - | 107 | 225 | ns | |
| Turn-Off delay time | td(off) | - | 165 | 340 | ns | |
| Turn-Off Fall time | tf | - | 85 | 180 | ns | |
| Total Gate Charge | Qg | VDS =400V , ID=24A VGS =10Vnote 45 | - | 81 | 100 | nC |
| Gate-Source charge | Qgs | - | 20 | - | nC | |
| Gate-Drain charge | Qgd | - | 30 | - | nC |
Drain-Source Diode Characteristics and Maximum Ratings
| Parameter | Symbol | Value | Unit | Notes |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 24 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 96 | A | |
| Maximum Continuous Drain-Source Diode Forward Current | VSD | 1.4 | V | VGS=0V, IS=24A |
| Reverse recovery time | trr | 530 | ns | VGS=0V, IS=24A dIF/dt=100A/s (note 4) |
| Reverse recovery charge | Qrr | 8.2 | C |
Thermal Characteristics
| Parameter | Symbol | Value | Unit | |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.45 | /W | |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 40.0 | /W |
2411201845_Jilin-Sino-Microelectronics-JCS24N50WH_C2693259.pdf
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