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quality consumption RF bipolar transistor Infineon BFR843EL3E6327XTSA1 with high speed and noise performance factory
quality consumption RF bipolar transistor Infineon BFR843EL3E6327XTSA1 with high speed and noise performance factory

consumption RF bipolar transistor Infineon BFR843EL3E6327XTSA1 with high speed and noise performance

Key Attributes
Model Number: BFR843EL3E6327XTSA1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2.6V
Current - Collector Cutoff:
400nA
Pd - Power Dissipation:
125mW
Current - Collector(Ic):
55mA
Collector - Emitter Voltage VCEO:
2.6V
Mfr. Part #:
BFR843EL3E6327XTSA1
Package:
TSLP-3
Product Description

Product Overview

The BFR843EL3 is a low noise, dual-band, pre-matched RF bipolar transistor designed for high-speed and low-power consumption applications. It offers a unique combination of high-end RF performance and robustness, including high input power handling and ESD hardness. Its high transition frequency enables excellent noise performance across various frequencies. This transistor is suitable for low voltage applications and is qualified for industrial applications.

Product Attributes

  • Brand: Infineon
  • Product Name: BFR843EL3
  • Ordering Code: BFR843EL3E6327XTSA1
  • Package: TSLP-3-10
  • Marking: T2
  • Pieces per Reel: 15000
  • Certifications: Qualified for industrial applications according to JEDEC47/20/22

Technical Specifications

ParameterSymbolValuesUnitNote or test condition
Collector emitter breakdown voltageV(BR)CEO2.25 - 2.6VIC = 1 mA, IB = 0, open base
Collector emitter leakage currentICES- 400nAVCE = 1.5 V, VBE = 0, E-B short circuited
Collector base leakage currentICBO- 400nAVCB = 1.5 V, IE = 0, open emitter
Emitter base leakage currentIEBO- 10AVEB = 0.5 V, IC = 0, open collector
DC current gainhFE230 - 360 (IC=1mA), 260 - 580 (IC=15mA)-VCE = 1.8 V, Pulse measured
Collector base capacitanceCCB0.07 - 5.26pFf = 1 MHz / 1 GHz, VCB = 1.8 V, VBE = 0, emitter grounded
Collector emitter capacitanceCCE0.42pFf = 1 MHz, VCE = 1.8 V, VBE = 0, base grounded
Emitter base capacitanceCEB0.66pFf = 1 MHz, VEB = 0.4 V, VCB = 0, collector grounded
Maximum power gain (450 MHz)Gms24.5 - 25.5dBVCE = 1.8 V, IC = 15 mA
Minimum noise figure (450 MHz)NFmin0.95dBVCE = 1.8 V, IC = 8 mA
3rd order intercept point at output (450 MHz)OIP323dBmZS = ZL = 50 , IC = 15 mA
Maximum power gain (2.4 GHz)Gms22 - 24dBVCE = 1.8 V, IC = 15 mA
Minimum noise figure (2.4 GHz)NFmin1 - 20dBVCE = 1.8 V, IC = 8 mA
3rd order intercept point at output (2.4 GHz)OIP320.5dBmZS = ZL = 50 , IC = 15 mA
Maximum power gain (5.5 GHz)Gms21.5 - 23dBVCE = 1.8 V, IC = 15 mA
Minimum noise figure (5.5 GHz)NFmin1.15 - 21.5dBVCE = 1.8 V, IC = 8 mA
3rd order intercept point at output (5.5 GHz)OIP320.5dBmZS = ZL = 50 , IC = 15 mA

2504101957_Infineon-BFR843EL3E6327XTSA1_C129244.pdf

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