Low Voltage High Frequency Schottky Diode IDCHIP B5819W Designed for Inverter and Protection Circuit
Key Attributes
Model Number:
B5819W
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
9A
Reverse Leakage Current (Ir):
1mA@40V
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
900mV@3A
Current - Rectified:
1A
Mfr. Part #:
B5819W
Package:
SOD-123
Product Description
Product Overview
The B5817W-B5819W series are Schottky barrier diodes designed for low voltage, high frequency applications. They are suitable for use in inverters, free-wheeling, and polarity protection circuits.
Product Attributes
- Brand: SCHOTTKY BARRIER DIODE
- Origin: (Shenzhen Indreamchip Electronics Technology Co., Ltd.)
- Package: SOD-123
Technical Specifications
| Model | Marking | Non-Repetitive Peak Reverse Voltage (VRM) | Peak Repetitive Peak Reverse Voltage (VRRM) | Working Peak Reverse Voltage (VRWM) | DC Blocking Voltage (VR) | RMS Reverse Voltage (VR(RMS)) | Average Rectified Output Current (IO) | Peak Forward Surge Current (IFSM) @t=8.3ms | Repetitive Peak Forward Current (IFRM) | Power Dissipation (Pd) | Thermal Resistance Junction to Ambient (RJA) | Storage Temperature (TSTG) | Reverse Breakdown Voltage (V(BR)) @IR=1mA | Reverse Voltage Leakage Current (IR) | Forward Voltage (VF) | Diode Capacitance (CD) @VR=4V, f=1MHz |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| B5817W | SJ | 20 V | 20 V | 20 V | 20 V | 14 V | 1 A | 9 A | 1.5 A | 500 mW | 250 /W | -55~+150 | 20 V | 1 mA @VR=20V | 0.45 V @IF=1A, 0.75 V @IF=3A | 120 pF |
| B5818W | SK | 30 V | 30 V | 30 V | 30 V | 21 V | 1 A | 9 A | 1.5 A | 500 mW | 250 /W | -55~+150 | 30 V | 1 mA @VR=30V | 0.55 V @IF=1A, 0.875 V @IF=3A | 120 pF |
| B5819W | SL | 40 V | 40 V | 40 V | 40 V | 28 V | 1 A | 9 A | 1.5 A | 500 mW | 250 /W | -55~+150 | 40 V | 1 mA @VR=40V | 0.6 V @IF=1A, 0.9 V @IF=3A | 120 pF |
2410121236_IDCHIP-B5819W_C2848199.pdf
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