Low noise RF transistor Infineon BFR93AWH6327 ideal for in low distortion amplifiers and oscillators

Key Attributes
Model Number: BFR93AWH6327
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
6GHz
Type:
NPN
Current - Collector(Ic):
90mA
Collector - Emitter Voltage VCEO:
12V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BFR93AWH6327
Package:
SOT-323
Product Description

Product Overview

The BFR93AW is a low-noise silicon bipolar RF transistor designed for low distortion amplifiers and oscillators operating up to 2 GHz. It is suitable for collector currents ranging from 5 mA to 30 mA and comes in a Pb-free and halogen-free package with visible leads. Qualification reports according to AEC-Q101 are available. This device is ESD sensitive and requires careful handling.

Product Attributes

  • Brand: Infineon Technologies
  • Model: BFR93AW
  • Package: SOT323
  • Certifications: AEC-Q101
  • Compliance: Pb-free (RoHS compliant), Halogen-free

Technical Specifications

ParameterSymbolValueUnitNotes
Maximum Ratings
Collector-emitter voltageVCEO12V
Collector-emitter voltageVCES20V
Collector-base voltageVCBO20V
Emitter-base voltageVEBO2V
Collector currentIC90mA
Base currentIB30mA
Total power dissipationPtot300mWTS 108 C
Junction temperatureTJ150C
Ambient temperatureTA-65 ... 150C
Storage temperatureTStg-65 ... 150C
Thermal Resistance
Junction - soldering pointRthJS140K/W1) TS is measured on the collector lead at the soldering point to the pcb
Electrical Characteristics
Collector-emitter breakdown voltageV(BR)CEO12VIC = 1 mA, IB = 0
Collector-emitter cutoff currentICES100AVCE = 20 V, VBE = 0
Collector-base cutoff currentICBO100nAVCB = 10 V, IE = 0
Emitter-base cutoff currentIEBO10AVEB = 2 V, IC = 0
DC current gainhFE70 - 140-IC = 30 mA, VCE = 8 V, pulse measured
AC Characteristics
Transition frequencyfT4.5 - 6GHzIC = 30 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitanceCcb0.58 - 0.8pFVCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded
Collector emitter capacitanceCce0.3pFVCE = 10 V, f = 1 MHz, VBE = 0, base grounded
Emitter-base capacitanceCeb1.9pFVEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded
Minimum noise figureNFmin1.5 - 2.6dBIC = 5 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz / 1.8 GHz
Power gain, maximum availableGma15.5 - 10.5dBIC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz / 1.8 GHz
Transducer gain|S21e|13 - 7.5dBIC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz / 1.8 MHz
Third order intercept point at outputIP315dBmIC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 0.9 GHz
1dB Compression pointP-1dB6dBmIC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 0.9 GHz

2410121733_Infineon-BFR93AWH6327_C151481.pdf

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