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quality Silicon bipolar RF transistor Infineon BFR193WH6327 optimized for linear broadband amplifier performance factory
quality Silicon bipolar RF transistor Infineon BFR193WH6327 optimized for linear broadband amplifier performance factory

Silicon bipolar RF transistor Infineon BFR193WH6327 optimized for linear broadband amplifier performance

Key Attributes
Model Number: BFR193WH6327
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
580mW
Transition Frequency(fT):
8GHz
Type:
NPN
Current - Collector(Ic):
80mA
Collector - Emitter Voltage VCEO:
12V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BFR193WH6327
Package:
SOT-323
Product Description

Product Overview

The BFR193W is a low-noise silicon bipolar RF transistor designed for high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. This Pb-free (RoHS compliant) component is available with an AEC-Q101 qualification report. It is an ESD sensitive device and requires careful handling.

Product Attributes

  • Brand: Infineon Technologies
  • Model: BFR193W
  • Package: SOT323
  • Certifications: AEC-Q101 (Qualification report available), RoHS compliant
  • Material: Silicon Bipolar

Technical Specifications

ParameterSymbolValueUnitConditions
Collector-emitter voltageVCEO12V
Collector-emitter voltageVCES20V
Collector-base voltageVCBO20V
Emitter-base voltageVEBO2V
Collector currentIC80mA
Base currentIB10mA
Total power dissipationPtot580mWTS 63C
Junction temperatureTJ150C
Storage temperatureTStg-55 ... 150C
Thermal Resistance Junction - soldering pointRthJS150K/WTS is measured on the collector lead at the soldering point to the pcb
Collector-emitter breakdown voltageV(BR)CEO12VIC = 1 mA, IB = 0
Collector-emitter cutoff currentICES100AVCE = 20 V, VBE = 0
Collector-base cutoff currentICBO100nAVCB = 10 V, IE = 0
Emitter-base cutoff currentIEBO1AVEB = 1 V, IC = 0
DC current gainhFE70 - 140-IC = 30 mA, VCE = 8 V, pulse measured
Transition frequencyfT6 - 8GHzIC = 50 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitanceCcb0.74pFVCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded
Collector emitter capacitanceCce0.28pFVCE = 10 V, f = 1 MHz, VBE = 0 , base grounded
Emitter-base capacitanceCeb1.8pFVEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded
Minimum noise figureNFmin1 - 1.6dBIC = 10 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz / 1.8 GHz
Power gain, maximum availableGma16 - 10.5-IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz / 1.8 GHz
Transducer gain|S21e|13.5 - 8dBIC = 30 mA, VCE = 8 V, ZS = ZL = 50, f = 900 MHz / 1.8 GHz
Third order intercept point at outputIP330dBmIC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz
1dB Compression pointP-1dB13dBmIC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz

2410121734_Infineon-BFR193WH6327_C152683.pdf

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