Digital Transistor Infineon BCR 505 E6327 Featuring Built in Bias Resistors NPN Silicon for Circuit

Key Attributes
Model Number: BCR 505 E6327
Product Custom Attributes
Input Resistor:
2.9kΩ
Resistor Ratio:
0.24
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
BCR 505 E6327
Package:
SOT-23
Product Description

Product Overview

The BCR505 is an NPN Silicon Digital Transistor featuring built-in bias resistors (R1= 2.2 k, R2= 10 k). It is Pb-free and RoHS compliant, qualified according to AEC Q101 standards. This transistor is designed for digital applications requiring integrated biasing.

Product Attributes

  • Brand: Infineon Technologies
  • Material: Silicon
  • Certifications: AEC Q101, RoHS compliant
  • Package: SOT23

Technical Specifications

ParameterSymbolValueUnitNotes
Maximum Ratings
Collector-emitter voltageVCEO50V
Collector-base voltageVCBO50V
Input forward voltageVi(fwd)20V
Input reverse voltageVi(rev)5V
Collector currentIC500mA
Total power dissipationPtot330mWTS 79 C
Junction temperatureTj150C
Storage temperatureTstg-65 ... 150C
Thermal Resistance (Junction-soldering point)RthJS 215K/W1) For calculation of RthJA please refer to Application Note AN077
DC Characteristics
Collector-emitter breakdown voltageV(BR)CEO50VIC = 100 A, IB = 0
Collector-base breakdown voltageV(BR)CBO50VIC = 10 A, IE = 0
Collector-base cutoff currentICBO-100nAVCB = 50 V, IE = 0
Emitter-base cutoff currentIEBO-0.65mAVEB = 5 V, IC = 0
DC current gainhFE70-IC = 50 mA, VCE = 5 V
Collector-emitter saturation voltageVCEsat-0.3VIC = 50 mA, IB = 2.5 mA 1)
Input off voltageVi(off)0.4-1IC = 100 A, VCE = 5 V
Input on voltageVi(on)0.5-1.4IC = 10 mA, VCE = 0.3 V
Input resistor R1R11.52.22.9k
Resistor ratio R1/R2R1/R20.190.220.24-
AC Characteristics
Transition frequencyfT-100MHzIC = 50 mA, VCE = 5 V, f = 100 MHz

2411271912_Infineon-BCR-505-E6327_C533899.pdf

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