N channel MOSFET Jilin Sino Microelectronics JCS4N60CB 220C designed for fast switching in power supplies
Key Attributes
Model Number:
JCS4N60CB-220C
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
12pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
124pF
Input Capacitance(Ciss):
1.1nF
Pd - Power Dissipation:
193.2W
Gate Charge(Qg):
18.1nC
Mfr. Part #:
JCS4N60CB-220C
Package:
TO-220
Product Description
Product Overview
The JCS4N60B is a N-channel enhancement mode MOSFET designed for high-frequency switch mode power supplies, electronic lamp ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability, making it a RoHS compliant product.
Product Attributes
- Brand: Jilin Sino-microelectronics co., Ltd
- Certifications: RoHS
- Origin: China
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rdson () (Vgs=10V) | Qg (nC) | Applications |
| JCS4N60VB-V-B / JCS4N60VB-V-BR | JCS4N60VB | IPAK | 4.0 | 600 | 2.4 | 18.1 | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, LED power supplies |
| JCS4N60RB-R-B / JCS4N60RB-R-BR / JCS4N60RB-R-A / JCS4N60RB-R-AR | JCS4N60RB | DPAK | 4.0 | 600 | 2.4 | 18.1 | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, LED power supplies |
| JCS4N60BB-B-B / JCS4N60BB-B-BR | JCS4N60BB | TO-262 | 4.0 | 600 | 2.4 | 18.1 | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, LED power supplies |
| JCS4N60SB-S-B / JCS4N60SB-S-BR / JCS4N60SB-S-A / JCS4N60SB-S-AR | JCS4N60SB | TO-263 | 4.0 | 600 | 2.4 | 18.1 | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, LED power supplies |
| JCS4N60CB-C-B / JCS4N60CB-C-BR | JCS4N60CB | TO-220C | 4.0 | 600 | 2.4 | 18.1 | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, LED power supplies |
| JCS4N60FB-F-B / JCS4N60FB-F-BR | JCS4N60FB | TO-220MF | 4.0 | 600 | 2.4 | 18.1 | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, LED power supplies |
| JCS4N60FB-F2-B / JCS4N60FB-F2-BR | JCS4N60FB | TO-220MF-K2 | 4.0 | 600 | 2.4 | 18.1 | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, LED power supplies |
| JCS4N60VB-V2-B / JCS4N60VB-V2-BR | JCS4N60VB | IPAK-S2 | 4.0 | 600 | 2.4 | 18.1 | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, LED power supplies |
| Parameter | Symbol | Value | Unit |
| Continuous Drain Current (Tc=25) | ID | 4.0* | A |
| Continuous Drain Current (Tc=100) | ID | 2.5* | A |
| Pulse Drain Current (note 1) | IDM | 16* | A |
| Gate-Source Voltage | VGSS | 30 | V |
| Single Pulsed Avalanche Energy (note 2) | EAS | 610.9 | mJ |
| Avalanche Current (note 1) | IAR | 4.0 | A |
| Repetitive Avalanche Current (note 1) | EAR | 15.0 | mJ |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 5.5 | V/ns |
| Power Dissipation (TC=25) | PD | 165.56 (VB/RB), 193.20 (CB/SB/BB), 41.92 (FB TO-220MF), 27.61 (FB TO-220MF-K2) | W |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | |
| Drain-Source Breakdown Voltage | BVDSS | 600 | V |
| Zero Gate Voltage Drain Current (VDS=600V,VGS=0V, TC=25) | IDSS | 10 | A |
| Gate Threshold Voltage | VGS(th) | 2.0 - 4.0 | V |
| Static Drain-Source On-Resistance (VGS =10V , ID=2A) | RDS(ON) | 1.7 - 2.4 | |
| Forward Transconductance (VDS = 40V , ID=2A) | gfs | 4.3 | S |
| Input capacitance (VDS=25V, VGS=0V, f=1.0MHZ) | Ciss | 702 - 1100 | pF |
| Output capacitance | Coss | 89 - 124 | pF |
| Reverse transfer capacitance | Crss | 2.69 - 12 | pF |
| Turn-On delay time (VDD=300V,ID=4.0A,RG=25) | td(on) | 9.8 - 20 | ns |
| Turn-On rise time | tr | 23.7 - 50 | ns |
| Turn-Off delay time | td(off) | 33.5 - 70 | ns |
| Turn-Off Fall time | tf | 25.8 - 55 | ns |
| Total Gate Charge | Qg | 13.3 - 28 | nC |
| Gate-Source charge | Qgs | 3.6 - 10 | nC |
| Gate-Drain charge | Qgd | 4.9 - 12 | nC |
| Continuous Drain -Source Diode Forward Current | IS | 4.0 | A |
| Pulsed Drain-Source Diode Forward Current | ISM | 16 | A |
| Drain-Source Diode Forward Voltage (VGS=0V, IS=4.0A) | VSD | - - 1.4 | V |
| Reverse recovery time (VGS=0V, IS=4.0A, dIF/dt=100A/s) | trr | 383 | ns |
| Reverse recovery charge | Qrr | 1.85 | C |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.755 (VB/RB), 0.647 (CB/SB/BB), 2.982 (FB TO-220MF), 4.528 (FB TO-220MF-K2) | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 80.25 (VB/RB), 60.18 (CB/SB/BB), 46.22 (FB TO-220MF), 49.62 (FB TO-220MF-K2) | /W |
2411201841_Jilin-Sino-Microelectronics-JCS4N60CB-220C_C272515.pdf
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