Dual transistor low noise RF device Infineon BFS481H6327XTSA1 in Pb free halogen free SOT363 package
Key Attributes
Model Number:
BFS481H6327XTSA1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
175mW
Transition Frequency(fT):
8GHz
Type:
NPN
Current - Collector(Ic):
20mA
Collector - Emitter Voltage VCEO:
12V
Operating Temperature:
-
Mfr. Part #:
BFS481H6327XTSA1
Package:
SOT-363
Product Description
Product Overview
The BFS481 is a low-noise silicon bipolar RF transistor designed for low-noise, high-gain broadband amplifiers. It features two internally isolated transistors in a single package, offering fT of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This device is suitable for collector currents ranging from 0.5 mA to 12 mA and is provided in an industry-standard, Pb-free (RoHS compliant) and halogen-free SOT363 package with visible leads, making it easy to use. Qualification reports according to AEC-Q101 are available.
Product Attributes
- Brand: Infineon Technologies
- Package Type: SOT363
- Certifications: AEC-Q101 (Qualification report available)
- Compliance: Pb-free (RoHS compliant), Halogen free
- Handling: ESD sensitive device, observe handling precaution
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes | ||
| Maximum Ratings | VCEO | 12 | V | TA = 25 C, unless otherwise specified | ||
| VCES | 20 | V | TA = 25 C, unless otherwise specified | |||
| VCBO | 20 | V | TA = 25 C, unless otherwise specified | |||
| VEBO | 2 | V | TA = 25 C, unless otherwise specified | |||
| IC | 20 | mA | TA = 25 C, unless otherwise specified | |||
| IB | 2 | mA | TA = 25 C, unless otherwise specified | |||
| Ptot | 175 | mW | TS 83 C, TA = 25 C, unless otherwise specified | |||
| TJ | 150 | C | TA = 25 C, unless otherwise specified | |||
| TStg | -55 ... 150 | C | TA = 25 C, unless otherwise specified | |||
| RthJS | 380 | K/W | Junction - soldering point | |||
| Electrical Characteristics | V(BR)CEO | 12 | V | IC = 1 mA, IB = 0 | ||
| ICES | - | 100 | A | VCE = 20 V, VBE = 0 | ||
| ICBO | - | 100 | nA | VCB = 10 V, IE = 0 | ||
| IEBO | - | 1 | A | VEB = 1 V, IC = 0 | ||
| hFE | 70 | 100 | 140 | IC = 5 mA, VCE = 8 V, pulse measured | ||
| fT | 6 | 8 | GHz | IC = 10 mA, VCE = 8 V, f = 500 MHz | ||
| Ccb | - | 0.23 | 0.4 | pF | VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded | |
| Cce | - | 0.13 | - | pF | VCE = 10 V, f = 1 MHz, VBE = 0, base grounded | |
| AC Characteristics | Ceb | - | 0.4 | - | pF | VEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded |
| NFmin | - | 0.9 | 1.2 | dB | IC = 2 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz / 1.8 GHz | |
| Gms | - | 20 | - | dB | IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz | |
| Gma | - | 15 | - | dB | IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz | |
| |S21e| | - | 16 | - | dB | IC = 5 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz | |
| |S21e| | - | 11 | - | dB | IC = 5 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 MHz |
2411111059_Infineon-BFS481H6327XTSA1_C3199325.pdf
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