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quality Silicon NPN AF Transistor Infineon SMBTA06E6327HTSA1 with SOT23 Package and Power Dissipation 330 Milliwatt factory
quality Silicon NPN AF Transistor Infineon SMBTA06E6327HTSA1 with SOT23 Package and Power Dissipation 330 Milliwatt factory

Silicon NPN AF Transistor Infineon SMBTA06E6327HTSA1 with SOT23 Package and Power Dissipation 330 Milliwatt

Key Attributes
Model Number: SMBTA06E6327HTSA1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
330mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
80V
Mfr. Part #:
SMBTA06E6327HTSA1
Package:
SOT-23
Product Description

Product Overview

The SMBTA06/MMBTA06 is an NPN Silicon AF Transistor designed for general-purpose amplification. It features a low collector-emitter saturation voltage and is Pb-free (RoHS compliant), qualified according to AEC Q101. Its complementary type is the SMBTA56/MMBTA56 (PNP).

Product Attributes

  • Brand: Infineon Technologies
  • Material: Silicon
  • Certifications: AEC Q101
  • Package: SOT23
  • Type Marking: s1G

Technical Specifications

ParameterSymbolValueUnitConditions
Maximum Ratings
Collector-emitter voltageVCEO80V
Collector-base voltageVCBO80V
Emitter-base voltageVEBO4V
Collector currentIC500mA
Peak collector currentICM1Atp 10 ms
Base currentIB100mA
Peak base currentIBM200mA
Total power dissipationPtot330mWTS 79 C
Junction temperatureTj150C
Storage temperatureTstg-65 ... 150C
Thermal Resistance
Junction - soldering pointRthJS 215K/W1)
DC Characteristics
Collector-emitter breakdown voltageV(BR)CEO80VIC = 1 mA, IB = 0
Collector-base breakdown voltageV(BR)CBO80VIC = 100 A, IE = 0
Emitter-base breakdown voltageV(BR)EBO4VIE = 10 A, IC = 0
Collector-base cutoff currentICBO-AVCB = 80 V, IE = 0, TA = 25C
Collector-base cutoff currentICBO0.1AVCB = 80 V, IE = 0, TA = 150 C
Collector-emitter cutoff currentICEO-nAVCE = 60 V, IB = 0, TA = 25C
Collector-emitter cutoff currentICEO100nAVCE = 60 V, IB = 0, TA = 150 C
DC current gainhFE100-IC = 10 mA, VCE = 1 V, TA = 25C
DC current gainhFE100-IC = 100 mA, VCE = 1 V, TA = 25C
Collector-emitter saturation voltageVCEsat-VIC = 100 mA, IB = 10 mA, TA = 25C
Collector-emitter saturation voltageVCEsat0.25VIC = 100 mA, IB = 10 mA, TA = 25C
Base-emitter voltageVBE(ON)-VIC = 100 mA, VCE = 1 V, TA = 25C
Base-emitter voltageVBE(ON)1.2VIC = 100 mA, VCE = 1 V, TA = 25C
AC Characteristics
Transition frequencyfT-MHzIC = 20 mA, VCE = 5 V, f = 20 MHz
Transition frequencyfT100MHzIC = 20 mA, VCE = 5 V, f = 20 MHz
Collector-base capacitanceCcb-pFVCB = 10 V, f = 1 MHz
Collector-base capacitanceCcb7pFVCB = 10 V, f = 1 MHz

2411041642_Infineon-SMBTA06E6327HTSA1_C3276474.pdf

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