Silicon Variable Capacitance Diode Infineon BB659C-02VH7908 with RoHS Compliance and Low Inductance
Key Attributes
Model Number:
BB659C-02VH7908
Product Custom Attributes
Capacitance Ratio:
15.3@C1V/C28V
Diode Configuration:
Independent
DC Reverse Voltage(Vr):
30V
Diode Capacitance:
2.75pF@28V,1MHz
Mfr. Part #:
BB659C-02VH7908
Package:
SC-79-2
Product Description
Product Overview
The BB639C/BB659C series are Silicon Variable Capacitance Diodes designed for tuning extended frequency bands in VHF TV/VTR tuners. These diodes feature a high capacitance ratio, low series inductance, and low series resistance. Their excellent uniformity and matching are achieved through an "in-line" matching assembly procedure. The components are Pb-free and RoHS compliant.
Product Attributes
- Certifications: Pb-free (RoHS compliant)
- Assembly Procedure: "in-line" matching
Technical Specifications
| Model | Type | Package | Configuration | LS (nH) | Marking |
|---|---|---|---|---|---|
| BB639C | Diode | SOD323 | single | 1.8 | yellow S |
| BB659C | Diode | SCD80 | single | 0.6 | H |
| BB659C/-02V | Diode | SC79 | single | 0.6 | HH |
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Maximum Ratings at TA = 25C, unless otherwise specified | ||||
| Diode reverse voltage | VR | 30 | V | |
| Peak reverse voltage | VRM | 35 | V | (R 5k) |
| Forward current | IF | 20 | mA | |
| Operating temperature range | Top | -55 ... 150 | C | |
| Storage temperature | Tstg | -55 ... 150 | C | |
| Electrical Characteristics at TA = 25C, unless otherwise specified | ||||
| Reverse current | IR | - | 10 | nA (VR = 30 V) |
| Reverse current | IR | - | 200 | nA (VR = 30 V, TA = 85 C) |
| Diode capacitance | CT | 36.5 | pF | (VR = 1 V, f = 1 MHz) |
| Diode capacitance | CT | 27 | pF | (VR = 2 V, f = 1 MHz) |
| Diode capacitance | CT | 2.5 | pF | (VR = 25 V, f = 1 MHz) |
| Diode capacitance | CT | 2.4 | pF | (VR = 28 V, f = 1 MHz) |
| Diode capacitance | CT | 39 | pF | (VR = 1 V, f = 1 MHz) |
| Diode capacitance | CT | 30.2 | pF | (VR = 2 V, f = 1 MHz) |
| Diode capacitance | CT | 2.72 | pF | (VR = 25 V, f = 1 MHz) |
| Diode capacitance | CT | 2.55 | pF | (VR = 28 V, f = 1 MHz) |
| Diode capacitance | CT | 42 | pF | (VR = 1 V, f = 1 MHz) |
| Diode capacitance | CT | 33.2 | pF | (VR = 2 V, f = 1 MHz) |
| Diode capacitance | CT | 3.05 | pF | (VR = 25 V, f = 1 MHz) |
| Diode capacitance | CT | 2.75 | pF | (VR = 28 V, f = 1 MHz) |
| Capacitance ratio | CT1/CT28 | 14.2 | - | (VR = 1 V, VR = 28 V, f = 1 MHz) |
| Capacitance ratio | CT1/CT28 | 15.3 | - | (VR = 1 V, VR = 28 V, f = 1 MHz) |
| Capacitance ratio | CT2/CT25 | 9.5 | - | (VR = 2 V, VR = 25 V, f = 1 MHz) |
| Capacitance ratio | CT2/CT25 | 11.1 | - | (VR = 2 V, VR = 25 V, f = 1 MHz) |
| Capacitance matching | CT/CT | - | 0.3 | % (VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, BB639C) |
| Capacitance matching | CT/CT | - | 0.5 | % (VR = 1V to 28V, f = 1 MHz, 4 diodes sequence, BB659C/-02V) |
| Capacitance matching | CT/CT | - | 2.5 | % (VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, BB659C/-02V) |
| Capacitance matching | CT/CT | - | 1 | % (VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, BB659C) |
| Series resistance | rS | - | 0.6 | (VR = 5 V, f = 470 MHz) |
| Series resistance | rS | - | 0.7 | (VR = 5 V, f = 470 MHz) |
| Series inductance | LS | - | 0.6 | nH |
Package Information
| Package Type | Dimensions (mm) | Reel Size | Pieces per Reel |
|---|---|---|---|
| SC79 | 0.8 x 1.3 x 0.4 (approx.) | 180 mm | 3.000 |
| SCD80 | 1.7 x 1.45 x 0.35 (approx.) | 180 mm | 8.000 |
| SOD323 | N/A | 330 mm | 10.000 |
Marking
Marking details vary by model and package. Refer to the datasheet for specific laser marking and date code information.
2411200037_Infineon-BB659C-02VH7908_C3272459.pdf
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