Low noise bipolar RF transistor Infineon BFP760H6327 silicon germanium type for RF device integration
Key Attributes
Model Number:
BFP760H6327
Product Custom Attributes
Emitter-Base Voltage(Vebo):
1.2V
Current - Collector Cutoff:
40nA
Pd - Power Dissipation:
240mW
Transition Frequency(fT):
45GHz
Type:
NPN
Current - Collector(Ic):
70mA
Collector - Emitter Voltage VCEO:
4V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BFP760H6327
Package:
SOT-343
Product Description
Product Overview
The BFP760 is a low-noise silicon germanium bipolar RF transistor designed for high-frequency applications. It offers excellent performance characteristics suitable for various RF and protection device applications.
Product Attributes
- Brand: Infineon Technologies AG
- Material: Silicon Germanium (SiGe)
- Package: SOT343
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
| Collector Current vs. Collector Emitter Voltage | IC = f (VCE) | IB = Parameter in A | 15 | ||||
| DC Current Gain | hFE = f (IC) | VCE = 3 V | 15 | ||||
| Collector Current vs. Base Emitter Voltage | IC = f (VBE) | VCE = 2 V | 16 | ||||
| Base Current vs. Base Emitter Forward Voltage | IB = f (VBE) | VCE = 2 V | 16 | ||||
| Base Current vs. Base Emitter Reverse Voltage | IB = f (VEB) | VCE = 2 V | 17 | ||||
| Transition Frequency | fT = f (IC) | GHz | f = 1 GHz, VCE = Parameter in V | 18 | |||
| 3rd Order Intercept Point | OIP3 = f (IC) | dBm | ZS = ZL= 50 , VCE, f = Parameters | 18 | |||
| 3rd Order Intercept Point at output | OIP3 [dBm] = f (IC, VCE) | dBm | ZS = ZL = 50 , f = 5.5 GHz | 19 | |||
| Compression Point at output | OP1dB [dBm] = f (IC, VCE) | dBm | ZS = ZL = 50 , f = 5.5 GHz | 19 | |||
| Collector Base Capacitance | CCB = f (VCB) | pF | f = 1 MHz | 20 | |||
| Gain | Gma, Gms, IS21I = f (f) | VCE = 3 V, IC = 30 mA | 20 | ||||
| Maximum Power Gain | Gmax = f (IC) | dB | VCE = 3 V, f = Parameter in GHz | 21 | |||
| Maximum Power Gain | Gmax = f (VCE) | dB | IC = 30 mA, f = Parameter in GHz | 21 | |||
| Input Reflection Coefficient | S11 = f (f) | VCE = 3 V, IC = 10 / 30 mA | 22 | ||||
| Source Impedance for Minimum Noise Figure | Zopt = f (f) | VCE = 3 V, IC = 10 / 30 mA | 22 | ||||
| Output Reflection Coefficient | S22 = f (f) | VCE = 3 V, IC = 10 / 30 mA | 23 | ||||
| Noise Figure min | NFmin = f (f) | dB | VCE = 3 V, IC = 10 / 30 mA, ZS = Zopt | 23 | |||
| Noise Figure min | NFmin = f (IC) | dB | VCE = 3 V, ZS = Zopt, f = Parameter in GHz | 24 | |||
| Noise Figure 50 Ohm | NF50 = f (IC) | dB | VCE = 3 V, ZS = 50 , f = Parameter in GHz | 24 | |||
| Maximum Ratings | TA = 25 C (unless otherwise specified) | 6 |
2410121500_Infineon-BFP760H6327_C151512.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
