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quality Reverse conducting igbt Infineon IHW30N135R5 with trenchstop technology offering low emi and stable temperature performance factory
quality Reverse conducting igbt Infineon IHW30N135R5 with trenchstop technology offering low emi and stable temperature performance factory

Reverse conducting igbt Infineon IHW30N135R5 with trenchstop technology offering low emi and stable temperature performance

Key Attributes
Model Number: IHW30N135R5
Product Custom Attributes
Td(off):
310ns
Pd - Power Dissipation:
330W
Collector-Emitter Breakdown Voltage (Vces):
1.35kV
Reverse Transfer Capacitance (Cres):
40pF
Input Capacitance(Cies):
1.81nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@0.75mA
Gate Charge(Qg):
235nC@15V
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
90A
Output Capacitance(Coes):
50pF
Switching Energy(Eoff):
1.4mJ
Mfr. Part #:
IHW30N135R5
Package:
TO-247-3
Product Description

Product Overview

The IHW30N135R5 is a Reverse Conducting IGBT from Infineon's Resonant Switching Series, featuring a powerful monolithic body diode with low forward voltage optimized for soft commutation. It utilizes TRENCHSTOP technology for excellent ruggedness, stable temperature behavior, low VCEsat, and easy parallel switching. This IGBT is designed for applications requiring low EMI and is qualified according to JESD-022. It is Pb-free, RoHS compliant, and halogen-free.

Product Attributes

  • Brand: Infineon
  • Technology: TRENCHSTOP
  • Certifications: Pb-free lead plating, RoHS compliant, Halogen free (according to IEC 61249-2-21)
  • Applications: Induction cooking, Microwave ovens

Technical Specifications

TypeVCE (V)IC (A)VCEsat, Tvj=25C (V)Tvjmax (C)MarkingPackage
IHW30N135R51350301.65175H30PR5PG-TO247-3
ParameterSymbolConditionsValueUnit
Collector-emitter breakdown voltageV(BR)CESVGE = 0V, IC = 0.50mA1350V
Collector-emitter saturation voltageVCEsatVGE = 15.0V, IC = 30.0A, Tvj = 25C1.65V
Diode forward voltageVFVGE = 0V, IF = 30.0A, Tvj = 25C1.85V
Gate-emitter threshold voltageVGE(th)IC = 0.75mA, VCE = VGE5.1 - 6.4V
Zero gate voltage collector currentICESVCE = 1350V, VGE = 0V, Tvj = 25C630µA
Gate-emitter leakage currentIGESVCE = 0V, VGE = 20V100nA
TransconductancegfsVCE = 20V, IC = 30.0A23.0S
Input capacitanceCiesVCE = 25V, VGE = 0V, f = 1MHz1810pF
Output capacitanceCoesVCE = 25V, VGE = 0V, f = 1MHz50pF
Reverse transfer capacitanceCresVCE = 25V, VGE = 0V, f = 1MHz40pF
Gate chargeQGVCC = 1080V, IC = 30.0A, VGE = 15V235.0nC
Internal emitter inductanceLEmeasured 5mm from case13.0nH
ParameterSymbolConditionsValueUnit
Turn-off delay timetd(off)Tvj = 25C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG(on) = 10.0Ω, RG(off) = 10.0Ω, Lσ = 175nH, Cσ = 40pF310ns
Fall timetfTvj = 25C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG(on) = 10.0Ω, RG(off) = 10.0Ω, Lσ = 175nH, Cσ = 40pF120ns
Turn-off energyEoffTvj = 25C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG(on) = 10.0Ω, RG(off) = 10.0Ω, Lσ = 175nH, Cσ = 40pF1.40mJ
Turn-off energy, soft switchingEoffdv/dt = 200.0V/µs0.17mJ
Turn-off delay timetd(off)Tvj = 175C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG(on) = 10.0Ω, RG(off) = 10.0Ω, Lσ = 175nH, Cσ = 40pF385ns
Fall timetfTvj = 175C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG(on) = 10.0Ω, RG(off) = 10.0Ω, Lσ = 175nH, Cσ = 40pF295ns
Turn-off energyEoffTvj = 175C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG(on) = 10.0Ω, RG(off) = 10.0Ω, Lσ = 175nH, Cσ = 40pF2.70mJ
Turn-off energy, soft switchingEoffdv/dt = 200.0V/µs0.57mJ

2410121815_Infineon-IHW30N135R5_C536124.pdf

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