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quality High power density EasyPIM module Infineon FP25R12W2T7 with TRENCHSTOP IGBT7 and solder contact technology factory
quality High power density EasyPIM module Infineon FP25R12W2T7 with TRENCHSTOP IGBT7 and solder contact technology factory

High power density EasyPIM module Infineon FP25R12W2T7 with TRENCHSTOP IGBT7 and solder contact technology

Key Attributes
Model Number: FP25R12W2T7
Product Custom Attributes
Td(off):
190ns
Td(on):
35ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.017nF
Input Capacitance(Cies):
4.77nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.15V@0.525mA
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
50A
Switching Energy(Eoff):
1.68mJ
Turn-On Energy (Eon):
1.78mJ
Mfr. Part #:
FP25R12W2T7
Package:
Through Hole,62.8x56.7mm
Product Description

EasyPIM Module with TRENCHSTOP IGBT7 and Emitter Controlled 7 Diode and NTC

The EasyPIM module is designed for auxiliary inverters, air conditioning systems, and motor drives. It features TRENCHSTOP IGBT7 technology for low VCEsat and overload operation up to 175C. The module boasts a 2.5 kV AC 1min insulation, an Al2O3 substrate with low thermal resistance, high power density, and a compact design utilizing solder contact technology.

Product Attributes

  • Brand: Infineon
  • Product Code: FP25R12W2T7
  • Technology: TRENCHSTOP IGBT7, Emitter Controlled 7 Diode, NTC

Technical Specifications

Component Parameter Min Typ Max Unit Conditions
IGBT, Inverter VCES 1200 V Tvj = 25C
ICDC 25 A TH = 105C, Tvj max = 175C
ICRM 50 A tP = 1 ms
VGES +/-20 V
VCE sat 1.60 1.82 V IC = 25 A, VGE = 15 V
VGEth 5.15 5.80 6.45 V IC = 0,525 mA, VCE = VGE, Tvj = 25C
QG 0.395 C VGE = -15 / 15 V, VCE = 600 V
RGint 0.0 Tvj = 25C
Cies 4.77 nF f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Cres 0.017 nF f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
ICES 0.0056 mA VCE = 1200 V, VGE = 0 V, Tvj = 25C
IGES 100 nA VCE = 0 V, VGE = 20 V, Tvj = 25C
Eon 1.78 3.18 mJ IC = 25 A, VCE = 600 V, L = 35 nH, di/dt = 650 A/s, VGE = -15 / 15 V, RGon = 6,2
Eoff 1.68 3.20 mJ IC = 25 A, VCE = 600 V, L = 35 nH, du/dt = 3000 V/s, VGE = -15 / 15 V, RGoff = 6,2
Diode, Inverter VRRM 1200 V Tvj = 25C
IF 25 A
IFRM 50 A tP = 1 ms
It 63.0 72.5 As VR = 0 V, tP = 10 ms
VF 1.63 1.83 V IF = 25 A, VGE = 0 V
Erec 0.94 1.85 mJ IF = 25 A, - diF/dt = 650 A/s, VR = 600 V, VGE = -15 V
Diode, Rectifier VRRM 1600 V Tvj = 25C
IFRMSM 50 A TH = 100C
IFSM 370 450 A tp = 10 ms
It 685 1010 As tp = 10 ms
VF 0.88 V Tvj = 150C, IF = 25 A
IR 1.00 mA Tvj = 150C, VR = 1600 V
RthJH 1.36 K/W per diode
IGBT, Brake-Chopper VCES 1200 V Tvj = 25C
ICDC 25 A TH = 105C, Tvj max = 175C
ICRM 50 A tP = 1 ms
VGES +/-20 V
VCE sat 1.60 1.82 V IC = 25 A, VGE = 15 V
VGEth 5.15 5.80 6.45 V IC = 0,525 mA, VCE = VGE, Tvj = 25C
QG 0.395 C VGE = -15 / 15 V, VCE = 600 V
RGint 0.0 Tvj = 25C
Cies 4.77 nF f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Cres 0.017 nF f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
ICES 0.0056 mA VCE = 1200 V, VGE = 0 V, Tvj = 25C
IGES 100 nA VCE = 0 V, VGE = 20 V, Tvj = 25C
Eon 1.66 2.94 mJ IC = 25 A, VCE = 600 V, L = 35 nH, di/dt = 650 A/s, VGE = -15 / 15 V, RGon = 6,2
Eoff 1.73 3.32 mJ IC = 25 A, VCE = 600 V, L = 35 nH, du/dt = 3000 V/s, VGE = -15 / 15 V, RGoff = 6,2
Diode, Brake-Chopper VRRM 1200 V Tvj = 25C
IF 10 A
IFRM 20 A tP = 1 ms
It As VR = 0
RthJH 1.73 K/W per diode
Tvj op -40 175 C

2411191537_Infineon-FP25R12W2T7_C42387481.pdf

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