TrenchStop series IGBT Infineon IKW50N60T 600V 50A with low EMI and rugged temperature stable design
Key Attributes
Model Number:
IKW50N60T
Product Custom Attributes
Pd - Power Dissipation:
333W
Td(off):
299ns
Td(on):
26ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Input Capacitance(Cies):
3.14nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.1V@0.8mA
Gate Charge(Qg):
310nC@15V
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
150A
Reverse Recovery Time(trr):
143ns
Switching Energy(Eoff):
1.4mJ
Turn-On Energy (Eon):
1.2mJ
Mfr. Part #:
IKW50N60T
Package:
TO-247
Product Description
Product Description
The IKW50N60T from Infineon's TrenchStop Series is a Low Loss DuoPack featuring an IGBT in Trench and Fieldstop technology with a soft, fast recovery EmCon HE diode. It offers a very low VCE(sat) of 1.5V (typ.) and a maximum junction temperature of 175C, with a short circuit withstand time of 5s. Designed for frequency converters and uninterrupted power supply applications, its Trench and Fieldstop technology for 600V applications provides very tight parameter distribution, high ruggedness, temperature stable behavior, very high switching speed, and low VCE(sat). Key advantages include a positive temperature coefficient in VCE(sat), low EMI, low gate charge, and a very soft, fast recovery anti-parallel EmCon HE diode.
Product Attributes
- Brand: Infineon
- Series: TrenchStop
- Technology: Trench and Fieldstop
- Diode Type: EmCon HE
Technical Specifications
| Type | VCE | IC | VCE(sat),Tj=25C | Tj,max | Marking Code | Package | Ordering Code |
| IKW50N60T | 600V | 50A | 1.5V | 175C | K50T60 | TO-247 | Q67040S4718 |
| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage | VC E | 600 | V |
| DC collector current, limited by Tjmax TC = 25C | I C | 801) | A |
| DC collector current, limited by Tjmax TC = 100C | I C | 50 | A |
| Pulsed collector current, tp limited by Tjmax | I C p u l s | 150 | A |
| Turn off safe operating area (VCE 600V, Tj 175C) | - | 150 | - |
| Diode forward current, limited by Tjmax TC = 25C | I F | 100 | A |
| Diode forward current, limited by Tjmax TC = 100C | I F | 50 | A |
| Diode pulsed current, tp limited by Tjmax | I Fp u l s | 150 | A |
| Gate-emitter voltage | V G E | 20 | V |
| Short circuit withstand time2) VGE = 15V, VCC 400V, Tj 150C | t SC | 5 | s |
| Power dissipation TC = 25C | P to t | 333 | W |
| Operating junction temperature | T j | -40...+175 | C |
| Storage temperature | T st g | -55...+175 | C |
| Soldering temperature, 1.6mm (0.063 in.) from case for 10s | - | 260 | C |
| Parameter | Symbol | Conditions | Max. Value | Unit |
| IGBT thermal resistance, junction case | R t h JC | TO-247 AC | 0.45 | K/W |
| Diode thermal resistance, junction case | R t h JC D | TO-247 AC | 0.8 | K/W |
| Thermal resistance, junction ambient | R t h JA | TO-247 AC | 40 | K/W |
| Parameter | Symbol | Conditions | min. | Typ. | max. | Unit |
| Collector-emitter breakdown voltage | V (BR )C ES | V G E=0V, I C=0.2mA | 600 | - | - | V |
| Collector-emitter saturation voltage | VC E(sa t ) | V G E = 15V, I C=50A T j=25C | - | 1.5 | - | V |
| Collector-emitter saturation voltage | VC E(sa t ) | V G E = 15V, I C=50A T j=175C | - | 1.9 | 2 | V |
| Diode forward voltage | V F | V G E=0V, I F=50A T j=25C | - | 1.65 | - | V |
| Diode forward voltage | V F | V G E=0V, I F=50A T j=175C | - | 1.6 | 2.05 | V |
| Gate-emitter threshold voltage | V G E( th ) | I C=0.8mA,VC E=VG E | 4.1 | 4.9 | 5.7 | V |
| Zero gate voltage collector current | I C ES | VC E=600V, V G E=0V T j=25C | - | - | 40 | A |
| Zero gate voltage collector current | I C ES | VC E=600V, V G E=0V T j=175C | - | - | 1000 | A |
| Gate-emitter leakage current | I G E S | VC E=0V,V GE=20V | - | - | 100 | nA |
| Transconductance | g f s | VC E=20V, I C=50A | - | 31 | - | S |
| Integrated gate resistor | R G i n t | - | - | - | - | |
| Input capacitance | C i s s | - | - | 3140 | - | pF |
| Output capacitance | C o s s | - | - | 200 | - | pF |
| Reverse transfer capacitance | C r s s | VC E=25V, V G E=0V, f=1MHz | - | 93 | - | pF |
| Gate charge | Q Ga te | VC C=480V, I C=50A V G E=15V | - | 310 | - | nC |
| Internal emitter inductance measured 5mm (0.197 in.) from case | L E | TO-247-3-1 | - | 7 | - | nH |
| Short circuit collector current1) | I C (SC ) | V G E=15V,t SC5s VC C = 400V, T j 150C | - | 458.3 | - | A |
| Parameter | Symbol | Conditions | min. | Typ. | max. | Unit |
| Turn-on delay time | t d (o n ) | Tj=25C, Inductive Load | - | 26 | - | ns |
| Rise time | t r | Tj=25C, Inductive Load | - | 29 | - | ns |
| Turn-off delay time | t d (o f f ) | Tj=25C, Inductive Load | - | 299 | - | ns |
| Fall time | t f | Tj=25C, Inductive Load | - | 29 | - | ns |
| Turn-on energy | Eo n | Tj=25C, Inductive Load | - | 1.2 | - | mJ |
| Turn-off energy | Eo ff | Tj=25C, Inductive Load | - | 1.4 | - | mJ |
| Total switching energy | E t s T | Tj=25C, VC C=400V,IC=50A, V G E=0/15V, R G= 7 , L 1)=103nH, C 1)=39pF | - | 2.6 | - | mJ |
| Diode reverse recovery time | t rr | Tj=25C, Inductive Load | - | 143 | - | ns |
| Diode reverse recovery charge | Q r r | Tj=25C, Inductive Load | - | 1.8 | - | C |
| Diode peak reverse recovery current | I rr m | Tj=25C, Inductive Load | - | 27.7 | - | A |
| Diode peak rate of fall of reverse recovery current during t b | dir r/dt | T j=25C, VR=400V, I F=50A, diF/dt=1280A/s | - | 671 | - | A/s |
| Parameter | Symbol | Conditions | min. | Typ. | max. | Unit |
| Turn-on delay time | t d (o n ) | Tj=175C, Inductive Load | - | 27 | - | ns |
| Rise time | t r | Tj=175C, Inductive Load | - | 33 | - | ns |
| Turn-off delay time | t d (o f f ) | Tj=175C, Inductive Load | - | 341 | - | ns |
| Fall time | t f | Tj=175C, Inductive Load | - | 55 | - | ns |
| Turn-on energy | Eo n | Tj=175C, Inductive Load | - | 1.8 | - | mJ |
| Turn-off energy | Eo ff | Tj=175C, Inductive Load | - | 1.8 | - | mJ |
| Total switching energy | E t s T | Tj=175C, VC C=400V,IC=50A, V G E=0/15V, R G= 7 L 1)=103nH, C 1)=39pF | - | 3.6 | - | mJ |
| Diode reverse recovery time | t rr | Tj=175C, Inductive Load | - | 205 | - | ns |
| Diode reverse recovery charge | Q r r | Tj=175C, Inductive Load | - | 4.3 | - | C |
| Diode peak reverse recovery current | I rr m | Tj=175C, Inductive Load | - | 40.7 | - | A |
| Diode peak rate of fall of reverse recovery current during t b | dir r/dt | T j=175C VR=400V, I F=50A, diF/dt=1280A/s | - | 449 | - | A/s |
2410121543_Infineon-IKW50N60T_C10458.pdf
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