Industrial grade IGBT Infineon IKW50N65H5 with 80 ampere collector current and low saturation voltage
Key Attributes
Model Number:
IKW50N65H5
Product Custom Attributes
Pd - Power Dissipation:
305W
Td(off):
180ns
Td(on):
21ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
11pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@0.5mA
Gate Charge(Qg):
120nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
57ns
Switching Energy(Eoff):
180uJ
Turn-On Energy (Eon):
520uJ
Input Capacitance(Cies):
3nF
Pulsed Current- Forward(Ifm):
150A
Output Capacitance(Coes):
65pF
Mfr. Part #:
IKW50N65H5
Package:
TO-247-3
Product Description
Product Overview
The IKW50N65H5 is a high-speed fifth-generation IGBT from Infineon's TRENCHSTOPTM 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It offers best-in-class efficiency in hard switching and resonant topologies, serving as a plug-and-play replacement for previous generation IGBTs. With a 650V breakdown voltage and low gate charge, it is designed for demanding applications in solar converters, uninterruptible power supplies, welding converters, and mid to high-range switching frequency converters.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPTM 5
- Diode Type: RAPID 1
- Certifications: JEDEC qualified, RoHS compliant
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE | IC (TC=25C) | VCEsat (Tvj=25C) | Tvjmax | Marking | Package |
| IKW50N65H5 | 650V | 80.0A | 1.65V | 175C | K50EH5 | PG-TO247-3 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 50.0A, Tvj = 25C | 1.65 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 27.0A, Tvj = 25C | 1.45 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.50mA, VCE = VGE | 3.2 - 4.8 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | 40.0 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 50.0A | 62.0 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 3000 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 65 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 11 | pF |
| Gate charge | QG | VCC = 520V, IC = 50.0A, VGE = 15V | 120.0 | nC |
| Internal emitter inductance | LE | measured 5mm from case | 13.0 | nH |
| Turn-on delay time (IGBT) | td(on) | Tvj = 25C, VCC = 400V, IC = 25.0A, RG = 12.0 | 21 | ns |
| Rise time (IGBT) | tr | Tvj = 25C, VCC = 400V, IC = 25.0A, RG = 12.0 | 15 | ns |
| Turn-off delay time (IGBT) | td(off) | Tvj = 25C, VCC = 400V, IC = 25.0A, RG = 12.0 | 180 | ns |
| Fall time (IGBT) | tf | Tvj = 25C, VCC = 400V, IC = 25.0A, RG = 12.0 | 18 | ns |
| Turn-on energy (IGBT) | Eon | Tvj = 25C, VCC = 400V, IC = 25.0A, RG = 12.0 | 0.52 | mJ |
| Turn-off energy (IGBT) | Eoff | Tvj = 25C, VCC = 400V, IC = 25.0A, RG = 12.0 | 0.18 | mJ |
| Total switching energy (IGBT) | Ets | Tvj = 25C, VCC = 400V, IC = 25.0A, RG = 12.0 | 0.70 | mJ |
| Diode reverse recovery time | trr | Tvj = 25C, VR = 400V, IF = 25.0A, diF/dt = 1200A/s | 57 | ns |
| Diode reverse recovery charge | Qrr | Tvj = 25C, VR = 400V, IF = 25.0A, diF/dt = 1200A/s | 0.57 | C |
| Diode peak reverse recovery current | Irrm | Tvj = 25C, VR = 400V, IF = 25.0A, diF/dt = 1200A/s | 16.7 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 25C, VR = 400V, IF = 25.0A, diF/dt = 1200A/s | -415 | A/s |
| IGBT thermal resistance, junction - case | Rth(j-c) | 0.50 | K/W | |
| Diode thermal resistance, junction - case | Rth(j-c) | 1.50 | K/W | |
| Thermal resistance junction - ambient | Rth(j-a) | 40 | K/W | |
| Maximum junction temperature | Tvjmax | 175 | C | |
| Storage temperature | Tstg | -55...+150 | C |
2411041601_Infineon-IKW50N65H5_C476108.pdf
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