Industrial Grade Infineon FF150R12RT4 IGBT Module with Isolated Base Plate and Standard Housing Design
Key Attributes
Model Number:
FF150R12RT4
Product Custom Attributes
Pd - Power Dissipation:
790W
Td(off):
300ns
Td(on):
130ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
9.35nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@5.3mA
Operating Temperature:
-40℃~+150℃
Pulsed Current- Forward(Ifm):
300A
Switching Energy(Eoff):
8.5mJ
Turn-On Energy (Eon):
8.5mJ
Mfr. Part #:
FF150R12RT4
Package:
Screw Terminals
Product Description
FF150R12RT4 IGBT-Module
The FF150R12RT4 is a 34mm module featuring a fast Trench/Fieldstop IGBT4 and an Emitter Controlled 4 diode. It is designed for high-frequency switching applications such as motor drives and UPS systems. Key advantages include an extended operation temperature (Tvj op = 150C), low switching losses, low VCEsat, and VCEsat with a positive temperature coefficient. The module has an isolated base plate and a standard housing.
Product Attributes
- Module Label Code: Barcode Code 128 DMX
- Module Serial Number: Digits 1-5
- Module Material Number: Digits 6-11
- Production Order Number: Digits 12-19
- Datecode (Production Year): Digits 20-21
- Datecode (Production Week): Digits 22-23
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| IGBT, Inverter - Maximum Rated Values | ||||
| Collector-emitter voltage | VCES | 1200 | V | Tvj = 25C |
| Continuous DC collector current | IC nom | 150 | A | TC = 100C, Tvj max = 175C |
| Repetitive peak collector current | ICRM | 300 | A | tP = 1 ms |
| Total power dissipation | Ptot | 790 | W | TC = 25C, Tvj max = 175C |
| Gate-emitter peak voltage | VGES | +/-20 | V | |
| IGBT, Inverter - Characteristic Values | ||||
| Collector-emitter saturation voltage | VCE sat | 1.75 / 2.05 / 2.15 | V | IC = 150 A, VGE = 15 V (Tvj = 25C / 125C / 150C) |
| Gate threshold voltage | VGEth | 5.2 / 5.8 / 6.4 | V | IC = 5.30 mA, VCE = VGE, Tvj = 25C |
| Gate charge | QG | 1.25 | C | VGE = -15 V ... +15 V |
| Internal gate resistor | RGint | 5.0 | Tvj = 25C | |
| Input capacitance | Cies | 9.35 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Reverse transfer capacitance | Cres | 0.35 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Collector-emitter cut-off current | ICES | 1.0 | mA | VCE = 1200 V, VGE = 0 V, Tvj = 25C |
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0 V, VGE = 20 V, Tvj = 25C |
| Turn-on delay time | td on | 0.13 / 0.15 / 0.15 | s | IC = 150 A, VCE = 600 V, VGE = 15 V, RGon = 1.1 (Tvj = 25C / 125C / 150C) |
| Rise time | tr | 0.02 / 0.03 / 0.035 | s | IC = 150 A, VCE = 600 V, VGE = 15 V, RGon = 1.1 (Tvj = 25C / 125C / 150C) |
| Turn-off delay time | td off | 0.30 / 0.38 / 0.40 | s | IC = 150 A, VCE = 600 V, VGE = 15 V, RGoff = 1.1 (Tvj = 25C / 125C / 150C) |
| Fall time | tf | 0.045 / 0.08 / 0.09 | s | IC = 150 A, VCE = 600 V, VGE = 15 V, RGoff = 1.1 (Tvj = 25C / 125C / 150C) |
| Turn-on energy loss per pulse | Eon | 8.50 / 13.5 / 15.0 | mJ | IC = 150 A, VCE = 600 V, LS = 30 nH, VGE = 15 V, di/dt = 3400 A/s, RGon = 1.1 (Tvj = 25C / 125C / 150C) |
| Turn-off energy loss per pulse | Eoff | 8.50 / 13.5 / 15.5 | mJ | IC = 150 A, VCE = 600 V, LS = 30 nH, VGE = 15 V, du/dt = 3300 V/s, RGoff = 1.1 (Tvj = 25C / 125C / 150C) |
| Short circuit data | ISC | 600 | A | VGE 15 V, VCC = 800 V, VCEmax = VCES - LsCE di/dt, Tvj = 150C, tP 10 s |
| Thermal resistance, junction to case (per IGBT) | RthJC | 0.19 | K/W | |
| Thermal resistance, case to heatsink (per IGBT) | RthCH | 0.081 | K/W | Paste = 1 W/(mK) |
| Temperature in switching operation | Tvj op | -40 to 150 | C | |
| Diode, Inverter - Maximum Rated Values | ||||
| Repetitive peak reverse voltage | VRRM | 1200 | V | Tvj = 25C |
| Continuous DC forward current | IF | 150 | A | |
| Repetitive peak forward current | IFRM | 300 | A | tP = 1 ms |
| It - value | It | 4100 / 4000 | As | VR = 0 V, tP = 10 ms (Tvj = 125C / 150C) |
| Diode, Inverter - Characteristic Values | ||||
| Forward voltage | VF | 1.75 / 1.65 / 2.20 | V | IF = 150 A, VGE = 0 V (Tvj = 25C / 125C / 150C) |
| Peak reverse recovery current | IRM | 120 / 140 / 150 | A | IF = 150 A, - diF/dt = 3400 A/s, VR = 600 V, VGE = -15 V (Tvj = 25C / 125C / 150C) |
| Recovered charge | Qr | 14.0 / 24.0 / 28.0 | C | IF = 150 A, - diF/dt = 3400 A/s, VR = 600 V, VGE = -15 V (Tvj = 25C / 125C / 150C) |
| Reverse recovery energy | Erec | 5.00 / 8.50 / 10.0 | mJ | IF = 150 A, - diF/dt = 3400 A/s, VR = 600 V, VGE = -15 V (Tvj = 25C / 125C / 150C) |
| Thermal resistance, junction to case (per diode) | RthJC | 0.31 | K/W | |
| Thermal resistance, case to heatsink (per diode) | RthCH | 0.13 | K/W | Paste = 1 W/(mK) |
| Temperature in switching operation | Tvj op | -40 to 150 | C | |
| Module - General Specifications | ||||
| Isolation test voltage | VISOL | 4.0 | kV | RMS, f = 50 Hz, t = 1 min. |
| Material of module baseplate | Cu | |||
| Internal isolation | Al2O3 | Basic insulation (class 1, IEC 61140) | ||
| Creepage distance (terminal to heatsink) | 17.0 | mm | ||
| Creepage distance (terminal to terminal) | 20.0 | mm | ||
| Clearance (terminal to heatsink) | 17.0 | mm | ||
| Clearance (terminal to terminal) | 9.5 | mm | ||
| Comparative tracking index | CTI | > 200 | ||
| Thermal resistance, case to heatsink (per module) | RthCH | 0.05 | K/W | Paste = 1 W/(mK) |
| Stray inductance module | LsCE | 30 | nH | |
| Module lead resistance, terminals - chip (per switch) | RCC'+EE' | 0.65 | m | TC = 25C |
| Storage temperature | Tstg | -40 to 125 | C | |
| Mounting torque for module mounting (Screw M6) | M | 3.00 - 5.00 | Nm | Mounting according to valid application note |
| Terminal connection torque (Screw M5) | M | 2.5 - 5.0 | Nm | Mounting according to valid application note |
| Weight | G | 160 | g | |
| Power Cycling Capability at Tvjop=125C | 300,000 cycles @ dTj=50K | According to valid specification for standard modules at Tvjmax=125C | ||
2410121850_Infineon-FF150R12RT4_C540936.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
