High speed Infineon IKW50N60H3 600V 100A IGBT with low VCEsat and maximum junction temperature 175C
Key Attributes
Model Number:
IKW50N60H3
Product Custom Attributes
Pd - Power Dissipation:
333W
Td(off):
235ns
Td(on):
23ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Reverse Transfer Capacitance (Cres):
96pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.1V@0.8mA
Gate Charge(Qg):
315nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
130ns
Switching Energy(Eoff):
910uJ
Turn-On Energy (Eon):
1.45mJ
Input Capacitance(Cies):
2.96nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
116pF
Mfr. Part #:
IKW50N60H3
Package:
TO-247-3
Product Description
Product Overview
The IKW50N60H3 is a high-speed IGBT in Trench and Fieldstop technology, featuring a soft, fast recovery anti-parallel diode. This third-generation device offers very low VCEsat, low EMI, and a maximum junction temperature of 175C. It is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant. Ideal for high switching frequency applications such as uninterruptible power supplies and welding converters.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOP™
- Certifications: RoHS compliant
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE | IC (TC=25C) | IC (TC=100C) | VCEsat (Tvj=25C) | Tvjmax | Marking | Package |
| IKW50N60H3 | 600V | 100.0A | 50.0A | 1.85V | 175C | K50H603 | PG-TO247-3 |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 2.00mA | 600 | - | - | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 50.0A | - | 1.85 | 2.30 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 30.0A | - | 1.65 | 2.05 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.80mA, VCE = VGE | 4.1 | 5.1 | 5.7 | V |
| Zero gate voltage collector current | ICES | VCE = 600V, VGE = 0V | - | - | 3500.0 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 50.0A | - | 30.0 | - | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - | 2960 | - | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | - | 116 | - | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | - | 96 | - | pF |
| Gate charge | QG | VCC = 480V, IC = 50.0A, VGE = 15V | - | 315.0 | - | nC |
| Internal emitter inductance | LE | measured 5mm from case | - | 13.0 | - | nH |
| Short circuit collector current | IC(SC) | VGE = 15.0V, VCC 400V, tSC 5s, Tvj = 150C | - | 330 | - | A |
| Turn-on delay time | td(on) | Tvj = 25C, Inductive Load | - | 23 | - | ns |
| Rise time | tr | Tvj = 25C, Inductive Load | - | 37 | - | ns |
| Turn-off delay time | td(off) | Tvj = 25C, Inductive Load | - | 235 | - | ns |
| Fall time | tf | Tvj = 25C, Inductive Load | - | 24 | - | ns |
| Turn-on energy | Eon | Tvj = 25C, Inductive Load | - | 1.45 | - | mJ |
| Turn-off energy | Eoff | Tvj = 25C, Inductive Load | - | 0.91 | - | mJ |
| Total switching energy | Ets | Tvj = 25C, Inductive Load | - | 2.36 | - | mJ |
| Diode reverse recovery time | trr | Tvj = 25C, VR = 400V, IF = 30.0A, diF/dt = 1000A/s | - | 130 | - | ns |
| Diode reverse recovery charge | Qrr | Tvj = 25C, VR = 400V, IF = 30.0A, diF/dt = 1000A/s | - | 0.88 | - | C |
| Diode peak reverse recovery current | Irrm | Tvj = 25C, VR = 400V, IF = 30.0A, diF/dt = 1000A/s | - | 16.9 | - | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 25C, VR = 400V, IF = 30.0A, diF/dt = 1000A/s | - | -598 | - | A/s |
| Turn-on delay time | td(on) | Tvj = 175C, Inductive Load | - | 23 | - | ns |
| Rise time | tr | Tvj = 175C, Inductive Load | - | 31 | - | ns |
| Turn-off delay time | td(off) | Tvj = 175C, Inductive Load | - | 273 | - | ns |
| Fall time | tf | Tvj = 175C, Inductive Load | - | 24 | - | ns |
| Turn-on energy | Eon | Tvj = 175C, Inductive Load | - | 1.42 | - | mJ |
| Turn-off energy | Eoff | Tvj = 175C, Inductive Load | - | 1.13 | - | mJ |
| Total switching energy | Ets | Tvj = 175C, Inductive Load | - | 2.55 | - | mJ |
| Diode reverse recovery time | trr | Tvj = 175C, VR = 400V, IF = 30.0A, diF/dt = 1000A/s | - | 217 | - | ns |
| Diode reverse recovery charge | Qrr | Tvj = 175C, VR = 400V, IF = 30.0A, diF/dt = 1000A/s | - | 2.40 | - | C |
| Diode peak reverse recovery current | Irrm | Tvj = 175C, VR = 400V, IF = 30.0A, diF/dt = 1000A/s | - | 22.9 | - | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 175C, VR = 400V, IF = 30.0A, diF/dt = 1000A/s | - | -307 | - | A/s |
2410121732_Infineon-IKW50N60H3_C127956.pdf
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