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quality EconoPACK2 IGBT module Infineon FS75R12KT4B15 featuring integrated NTC sensor and low VCEsat voltage factory
quality EconoPACK2 IGBT module Infineon FS75R12KT4B15 featuring integrated NTC sensor and low VCEsat voltage factory
quality EconoPACK2 IGBT module Infineon FS75R12KT4B15 featuring integrated NTC sensor and low VCEsat voltage factory
quality EconoPACK2 IGBT module Infineon FS75R12KT4B15 featuring integrated NTC sensor and low VCEsat voltage factory

EconoPACK2 IGBT module Infineon FS75R12KT4B15 featuring integrated NTC sensor and low VCEsat voltage

Key Attributes
Model Number: FS75R12KT4B15
Product Custom Attributes
Td(off):
300ns
Pd - Power Dissipation:
385W
Td(on):
130ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
4.3nF@25V
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@2.4mA
Operating Temperature:
-40℃~+150℃
Switching Energy(Eoff):
3.9mJ
Turn-On Energy (Eon):
4.7mJ
Mfr. Part #:
FS75R12KT4B15
Package:
Through Hole,107.5x45mm
Product Description

Product Overview

The FS75R12KT4_B15 is an EconoPACK2 IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology. It offers low VCEsat, high thermal cycling capability, and an integrated NTC temperature sensor, making it suitable for applications such as auxiliary inverters, motor drives, and servo drives.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Al2O3 Substrate, Copper Base Plate
  • Certifications: UL approved (E83335)

Technical Specifications

ParameterValueUnitNotes
IGBT, Inverter - Maximum Rated Values
Collector-emitter voltage1200VTvj = 25C
Continuous DC collector current75ATC = 95C, Tvj max = 175C
Repetitive peak collector current150AtP = 1 ms
Total power dissipation385WTC = 25C, Tvj max = 175C
Gate-emitter peak voltage+/-20V
IGBT, Inverter - Characteristic Values
Collector-emitter saturation voltage1.85 - 2.25VIC = 75 A, VGE = 15 V, Tvj = 25C - 150C
Gate threshold voltage5.2 - 6.4VIC = 2,40 mA, VCE = VGE, Tvj = 25C
Gate charge0.57CVGE = -15 V ... +15 V
Internal gate resistor10Tvj = 25C
Input capacitance4.30nFf = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Reverse transfer capacitance0.16nFf = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Collector-emitter cut-off current1.0mAVCE = 1200 V, VGE = 0 V, Tvj = 25C
Gate-emitter leakage current100nAVCE = 0 V, VGE = 20 V, Tvj = 25C
Turn-on delay time0.13 - 0.15sIC = 75 A, VCE = 600 V, VGE = 15 V, RGon = 2,2 , Tvj = 25C - 150C
Rise time0.02 - 0.035sIC = 75 A, VCE = 600 V, VGE = 15 V, RGon = 2,2 , Tvj = 25C - 150C
Turn-off delay time0.30 - 0.40sIC = 75 A, VCE = 600 V, VGE = 15 V, RGoff = 2,2 , Tvj = 25C - 150C
Fall time0.045 - 0.09sIC = 75 A, VCE = 600 V, VGE = 15 V, RGoff = 2,2 , Tvj = 25C - 150C
Turn-on energy loss per pulse4.70 - 8.00mJIC = 75 A, VCE = 600 V, LS = 25 nH, VGE = 15 V, di/dt = 2800 A/s, RGon = 2,2 , Tvj = 25C - 150C
Turn-off energy loss per pulse3.90 - 6.40mJIC = 75 A, VCE = 600 V, LS = 25 nH, VGE = 15 V, du/dt = 3800 V/s, RGoff = 2,2 , Tvj = 25C - 150C
Short circuit capability270AVGE 15 V, VCC = 800 V, Tvj = 150C, tP 10 s
Thermal resistance, junction to case (per IGBT)0.39K/W
Thermal resistance, case to heatsink (per IGBT)0.195K/WPaste = 1 W/(mK) / grease = 1 W/(mK)
Operating temperature-40 - 150CTvj op
Diode, Inverter - Maximum Rated Values
Repetitive peak reverse voltage1200VTvj = 25C
Continuous DC forward current75A
Repetitive peak forward current150AtP = 1 ms
It - value960AsVR = 0 V, tP = 10 ms, Tvj = 125C
Diode, Inverter - Characteristic Values
Forward voltage1.65 - 2.15VIF = 75 A, VGE = 0 V, Tvj = 25C - 150C
Peak reverse recovery current115 - 125AIF = 75 A, - diF/dt = 2800 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C
Recovered charge8.60 - 16.0CIF = 75 A, - diF/dt = 2800 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C
Reverse recovery energy2.60 - 5.50mJIF = 75 A, - diF/dt = 2800 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C
Thermal resistance, junction to case (per diode)0.62K/W
Thermal resistance, case to heatsink (per diode)0.31K/WPaste = 1 W/(mK) / grease = 1 W/(mK)
Operating temperature-40 - 150CTvj op
NTC Thermistor - Characteristic Values
Rated resistance5.00kTC = 25C
Deviation of R100-5 - 5%TC = 100C, R100 = 493
Power dissipation20.0mWTC = 25C
B-Value (B25/50)3375K
B-Value (B25/80)3411K
B-Value (B25/100)3433K
Module - General Specifications
Isolation test voltage2.5kVRMS, f = 50 Hz, t = 1 min.
Material of module baseplateCu
Internal isolationAl2O3Basic insulation (class 1, IEC 61140)
Creepage distance (terminal to heatsink)10.0mm
Creepage distance (terminal to terminal)10.0mm
Clearance (terminal to heatsink)7.5mm
Clearance (terminal to terminal)7.5mm
Comparative tracking index> 200
Thermal resistance, case to heatsink (per module)0.02K/WPaste = 1 W/(mK) / grease = 1 W/(mK)
Stray inductance module19nHLsCE
Module lead resistance (terminals - chip, per switch)1.80mTC = 25C
Storage temperature-40 - 125CTstg
Mounting torque for module mounting (Screw M5)3.00 - 6.00NmMounting according to valid application note
Weight180gG

2506301057_Infineon-FS75R12KT4B15_C3190295.pdf

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