IGBT with 650V Breakdown Voltage and RAPID 1 Diode Infineon IKP08N65F5 Using TRENCHSTOP 5 Technology
Key Attributes
Model Number:
IKP08N65F5
Product Custom Attributes
Pd - Power Dissipation:
70W
Td(off):
116ns
Td(on):
9ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
3pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@0.08mA
Gate Charge(Qg):
22nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
41ns
Switching Energy(Eoff):
20uJ
Turn-On Energy (Eon):
40uJ
Input Capacitance(Cies):
500pF
Pulsed Current- Forward(Ifm):
24A
Output Capacitance(Coes):
16pF
Mfr. Part #:
IKP08N65F5
Package:
TO-220-3
Product Description
Product Overview
The IKP08N65F5 is a high-speed 5th generation FAST IGBT from Infineon, featuring TRENCHSTOPTM 5 technology. It is copacked with a RAPID 1 fast and soft antiparallel diode, offering best-in-class efficiency in hard switching and resonant topologies. With a 650V breakdown voltage and low QG, this DuoPack IGBT is designed for high-speed switching applications and is qualified according to JEDEC standards. It supports a maximum junction temperature of 175C and is Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPTM 5
- Diode Type: RAPID 1
- Certifications: JEDEC, RoHS compliant
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE | IC | VCEsat, Tvj=25C | Tvjmax | Marking | Package |
| IKP08N65F5 | 650V | 8A | 1.6V | 175C | K08EEF5 | PG-TO220-3 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 8.0A, Tvj = 25C | 1.60 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 9.0A, Tvj = 25C | 1.45 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.08mA, VCE = VGE | 3.2 - 4.8 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | - 40.0 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 8.0A | 17.0 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 500 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 16 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 3 | pF |
| Gate charge | QG | VCC = 520V, IC = 8.0A, VGE = 15V | 22.0 | nC |
| Internal emitter inductance | LE | measured 5mm from case | 7.0 | nH |
| Parameter | Symbol | Conditions | Value | Unit |
| Turn-on delay time | td(on) | Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH, C = 30pF | 10 | ns |
| Rise time | tr | Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH, C = 30pF | 5 | ns |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH, C = 30pF | 116 | ns |
| Fall time | tf | Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH, C = 30pF | 20 | ns |
| Turn-on energy | Eon | Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH, C = 30pF | 0.07 | mJ |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH, C = 30pF | 0.02 | mJ |
| Total switching energy | Ets | Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH, C = 30pF | 0.09 | mJ |
| Diode reverse recovery time | trr | Tvj = 25C, VR = 400V, IF = 4.0A, diF/dt = 800A/s | 41 | ns |
| Diode reverse recovery charge | Qrr | Tvj = 25C, VR = 400V, IF = 4.0A, diF/dt = 800A/s | 0.14 | C |
| Diode peak reverse recovery current | Irrm | Tvj = 25C, VR = 400V, IF = 4.0A, diF/dt = 800A/s | 6.6 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 25C, VR = 400V, IF = 4.0A, diF/dt = 800A/s | -160 | A/s |
2410121815_Infineon-IKP08N65F5_C536188.pdf
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